Transistors - FETs, MOSFETs - Moja

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Transistors - FETs, MOSFETs - Moja

Diodes Incorporated

DMN10H700S-7

Sehemu ya hisa.: 167763

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 700mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.5A, 10V,

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Diodes Incorporated

DMP10H4D2S-7

Sehemu ya hisa.: 174928

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 270mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 500mA, 10V,

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Diodes Incorporated

DMT6008LFG-7

Sehemu ya hisa.: 168252

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 20A, 10V,

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DMP25H18DLFDE-13

Diodes Incorporated

DMP25H18DLFDE-13

Sehemu ya hisa.: 130078

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 260mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 3.5V, 10V, Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V,

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DMP45H150DHE-13

Diodes Incorporated

DMP45H150DHE-13

Sehemu ya hisa.: 156

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 450V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 250mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 150 Ohm @ 50mA, 10V,

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Diodes Incorporated

DMN53D0U-13

Sehemu ya hisa.: 151731

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 50V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 300mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 5V, Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V,

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Diodes Incorporated

DMS3014SFG-7

Sehemu ya hisa.: 112747

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 13 mOhm @ 10.4A, 10V,

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Diodes Incorporated

DMP3007SFG-13

Sehemu ya hisa.: 130106

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 70A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 mOhm @ 11.5A, 10V,

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Diodes Incorporated

DMP2021UFDF-13

Sehemu ya hisa.: 193018

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 7A, 4.5V,

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Diodes Incorporated

DMN7022LFGQ-13

Sehemu ya hisa.: 251

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 23A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.2A, 10V,

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Diodes Incorporated

DMT3006LFG-13

Sehemu ya hisa.: 131903

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Ta), 55.6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 mOhm @ 12A, 10V,

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Diodes Incorporated

DMP2130LDM-7

Sehemu ya hisa.: 154090

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.5A, 4.5V,

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Diodes Incorporated

DMP6185SE-13

Sehemu ya hisa.: 191164

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.2A, 10V,

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Diodes Incorporated

DMN2005UFG-13

Sehemu ya hisa.: 179526

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18.1A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 13.5A, 4.5V,

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Diodes Incorporated

DMP2005UFG-13

Sehemu ya hisa.: 170890

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 89A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 4 mOhm @ 15A, 4.5V,

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Diodes Incorporated

DMN62D1LFD-13

Sehemu ya hisa.: 179581

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 400mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4V, Rds On (Max) @ Id, Vgs: 2 Ohm @ 100mA, 4V,

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Diodes Incorporated

DMP4013LFG-7

Sehemu ya hisa.: 199657

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10.3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V,

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Diodes Incorporated

DMP6250SE-13

Sehemu ya hisa.: 196422

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.1A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V,

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Diodes Incorporated

DMP3008SFG-13

Sehemu ya hisa.: 168244

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V,

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Diodes Incorporated

DMN10H120SE-13

Sehemu ya hisa.: 112364

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.3A, 10V,

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Diodes Incorporated

DMN6069SE-13

Sehemu ya hisa.: 200

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.3A (Ta), 10A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 69 mOhm @ 3A, 10V,

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Diodes Incorporated

DMS3012SFG-7

Sehemu ya hisa.: 103458

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 10 mOhm @ 13.5A, 10V,

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Diodes Incorporated

DMN7022LFG-13

Sehemu ya hisa.: 165834

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.2A, 10V,

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Diodes Incorporated

ZXMN6A08GQTA

Sehemu ya hisa.: 190

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.8A, 10V,

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Diodes Incorporated

DMP1005UFDF-7

Sehemu ya hisa.: 200

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 26A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 5A, 4.5V,

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Diodes Incorporated

DMN4008LFG-13

Sehemu ya hisa.: 158827

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 3.3V, 10V, Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 10A, 10V,

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Diodes Incorporated

DMP6023LFG-13

Sehemu ya hisa.: 199663

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V,

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Diodes Incorporated

DMS3012SFG-13

Sehemu ya hisa.: 116291

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 10 mOhm @ 13.5A, 10V,

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Diodes Incorporated

DMP10H4D2S-13

Sehemu ya hisa.: 114956

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 270mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 500mA, 10V,

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Diodes Incorporated

DMG301NU-7

Sehemu ya hisa.: 164189

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 260mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.7V, 4.5V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V,

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Diodes Incorporated

DMN2011UFDE-13

Sehemu ya hisa.: 174144

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11.7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 7A, 4.5V,

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DMN30H4D0LFDE-7

Diodes Incorporated

DMN30H4D0LFDE-7

Sehemu ya hisa.: 175306

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 300V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 550mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.7V, 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 300mA, 10V,

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Diodes Incorporated

DMT8012LFG-13

Sehemu ya hisa.: 180404

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.5A (Ta), 35A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 12A, 10V,

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Diodes Incorporated

DMP3026SFDE-7

Sehemu ya hisa.: 155338

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 19 mOhm @ 4.5A, 10V,

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Diodes Incorporated

DMN3027LFG-13

Sehemu ya hisa.: 136104

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 18.6 mOhm @ 10A, 10V,

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Diodes Incorporated

DMN61D8L-7

Sehemu ya hisa.: 191753

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 470mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 3V, 5V, Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V,

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