Transistors - FETs, MOSFETs - Moja | Bidhaa tofauti za semiconductor | 40

ZVN2120ASTOB

Sehemu ya hisa.: 9780

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 180mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 10 Ohm @ 250mA, 10V,

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Diodes Incorporated

ZVNL120ASTOA

Sehemu ya hisa.: 5991

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 180mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 3V, 5V, Rds On (Max) @ Id, Vgs: 10 Ohm @ 250mA, 10V,

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Diodes Incorporated

ZVP1320A

Sehemu ya hisa.: 9856

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 70mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 80 Ohm @ 50mA, 10V,

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Diodes Incorporated

ZVN3306FTC

Sehemu ya hisa.: 9843

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 150mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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Diodes Incorporated

ZVP1320ASTZ

Sehemu ya hisa.: 9873

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 70mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 80 Ohm @ 50mA, 10V,

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Diodes Incorporated

ZXMN2A01E6TC

Sehemu ya hisa.: 9849

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 4.5V,

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Diodes Incorporated

ZVP0120ASTOB

Sehemu ya hisa.: 9836

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 110mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 32 Ohm @ 125mA, 10V,

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Diodes Incorporated

ZVN3320ASTOB

Sehemu ya hisa.: 9826

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V,

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Diodes Incorporated

ZVN0124ASTOB

Sehemu ya hisa.: 6076

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 240V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 160mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 16 Ohm @ 250mA, 10V,

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Diodes Incorporated

ZVN4525GTC

Sehemu ya hisa.: 9875

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 310mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 10V, Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 500mA, 10V,

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Diodes Incorporated

ZVN4306AVSTZ

Sehemu ya hisa.: 9822

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.1A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V,

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Diodes Incorporated

ZVP4424GTC

Sehemu ya hisa.: 9832

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 240V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 480mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 3.5V, 10V, Rds On (Max) @ Id, Vgs: 9 Ohm @ 200mA, 10V,

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Diodes Incorporated

ZVP1320ASTOB

Sehemu ya hisa.: 6070

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 70mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 80 Ohm @ 50mA, 10V,

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Diodes Incorporated

ZVP3306ASTZ

Sehemu ya hisa.: 9812

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 160mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V,

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Diodes Incorporated

ZXMN2A02X8TC

Sehemu ya hisa.: 5985

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 20 mOhm @ 11A, 4.5V,

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Diodes Incorporated

VN10LFTC

Sehemu ya hisa.: 9787

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 150mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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Diodes Incorporated

ZVP3310ASTOA

Sehemu ya hisa.: 5987

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 140mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V,

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Diodes Incorporated

ZXMN6A08E6TC

Sehemu ya hisa.: 9889

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.8A, 10V,

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Diodes Incorporated

ZXM64N03XTC

Sehemu ya hisa.: 9824

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V,

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Diodes Incorporated

ZVN0124ZSTOB

Sehemu ya hisa.: 9843

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 240V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 160mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 16 Ohm @ 250mA, 10V,

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Diodes Incorporated

ZVP2106ASTOA

Sehemu ya hisa.: 9836

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 280mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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Diodes Incorporated

ZVN2535ASTZ

Sehemu ya hisa.: 9837

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 350V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 90mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 35 Ohm @ 100mA, 10V,

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Diodes Incorporated

ZVNL120CSTOB

Sehemu ya hisa.: 9821

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 180mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 3V, 5V, Rds On (Max) @ Id, Vgs: 10 Ohm @ 250mA, 5V,

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Diodes Incorporated

ZVN3310A

Sehemu ya hisa.: 85236

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V,

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Diodes Incorporated

ZVN3310ASTOA

Sehemu ya hisa.: 9838

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V,

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Diodes Incorporated

ZVP0545ASTOA

Sehemu ya hisa.: 9816

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 450V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 45mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 150 Ohm @ 50mA, 10V,

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Diodes Incorporated

ZVP3310ASTZ

Sehemu ya hisa.: 9830

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 140mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V,

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Diodes Incorporated

ZXM66P02N8TC

Sehemu ya hisa.: 6016

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 3.2A, 4.5V,

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Diodes Incorporated

ZVN0540ASTOA

Sehemu ya hisa.: 9856

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 400V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 90mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 50 Ohm @ 100mA, 10V,

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Diodes Incorporated

ZVN4206ASTOB

Sehemu ya hisa.: 6003

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 600mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V,

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Diodes Incorporated

ZVN2110GTC

Sehemu ya hisa.: 9873

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 500mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

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Diodes Incorporated

ZVN0545ASTOA

Sehemu ya hisa.: 9841

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 450V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 90mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 50 Ohm @ 100mA, 10V,

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Diodes Incorporated

ZXMN10B08E6TC

Sehemu ya hisa.: 9861

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.3V, 10V, Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.6A, 10V,

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Diodes Incorporated

ZXMN2A01FTC

Sehemu ya hisa.: 9864

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 4.5V,

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Diodes Incorporated

ZVP2120ASTOB

Sehemu ya hisa.: 9833

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 25 Ohm @ 150mA, 10V,

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Diodes Incorporated

ZVNL120CSTZ

Sehemu ya hisa.: 5997

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 180mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 3V, 5V, Rds On (Max) @ Id, Vgs: 10 Ohm @ 250mA, 5V,

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