Transistors - FETs, MOSFETs - safu | Bidhaa tofauti za semiconductor | 1

EPC2105ENGRT

Sehemu ya hisa.: 13745

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.5A, Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 2.5mA,

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EPC

EPC2100

Sehemu ya hisa.: 18949

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Ta), 40A (Ta), Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA,

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EPC

EPC2104ENGRT

Sehemu ya hisa.: 13673

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 23A, Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 5.5mA,

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EPC

EPC2101ENGRT

Sehemu ya hisa.: 13969

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.5A, 38A, Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 2mA,

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EPC

EPC2103ENGRT

Sehemu ya hisa.: 13895

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 23A, Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 7mA,

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EPC

EPC2111ENGRT

Sehemu ya hisa.: 43248

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Ta), Rds On (Max) @ Id, Vgs: 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 5mA,

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EPC

EPC2101ENG

Sehemu ya hisa.: 2948

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.5A, 38A, Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 2mA,

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EPC

EPC2100ENGRT

Sehemu ya hisa.: 14216

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Ta), 40A (Ta), Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA,

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EPC

EPC2106ENGRT

Sehemu ya hisa.: 88131

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.7A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 600µA,

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EPC

EPC2102ENGRT

Sehemu ya hisa.: 14073

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 23A (Tj), Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 7mA,

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EPC

EPC2103

Sehemu ya hisa.: 23026

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A, Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 7mA,

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EPC

EPC2105

Sehemu ya hisa.: 24303

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.5A, 38A, Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA,

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EPC

EPC2100ENG

Sehemu ya hisa.: 2900

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Ta), 40A (Ta), Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA,

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EPC

EPC2105ENG

Sehemu ya hisa.: 2911

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.5A, 38A, Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 2.5mA,

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EPC

EPC2103ENG

Sehemu ya hisa.: 2868

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 23A, Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 7mA,

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EPC

EPC2104

Sehemu ya hisa.: 24318

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 23A, Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 5.5mA,

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EPC

EPC2106

Sehemu ya hisa.: 24307

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.7A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 600µA,

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EPC

EPC2102ENG

Sehemu ya hisa.: 2960

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 23A, Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 7mA,

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EPC

EPC2102

Sehemu ya hisa.: 24374

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 23A, Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 7mA,

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EPC

EPC2104ENG

Sehemu ya hisa.: 2913

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 23A, Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 5.5mA,

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EPC

EPC2107ENGRT

Sehemu ya hisa.: 82626

Aina ya FET: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.7A, 500mA, Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA,

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EPC

EPC2107

Sehemu ya hisa.: 79571

Aina ya FET: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.7A, 500mA, Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA,

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EPC

EPC2111

Sehemu ya hisa.: 48430

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Ta), Rds On (Max) @ Id, Vgs: 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 5mA,

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EPC

EPC2110ENGRT

Sehemu ya hisa.: 67578

Aina ya FET: 2 N-Channel (Dual) Common Source, Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 120V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.4A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 700µA,

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EPC

EPC2101

Sehemu ya hisa.: 21570

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.5A, 38A, Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA,

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EPC

EPC2110

Sehemu ya hisa.: 26911

Aina ya FET: 2 N-Channel (Dual) Common Source, Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 120V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.4A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 700µA,

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EPC

EPC2108

Sehemu ya hisa.: 83651

Aina ya FET: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 60V, 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.7A, 500mA, Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA,

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