Transistors - FETs, MOSFETs - Moja

SIPC30N60CFDX1SA1
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SIPC26N60CFDX1SA1
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IPC60R190E6X7SA1

IPC60R190E6X7SA1

Sehemu ya hisa.: 2312

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IRFC4104EB

IRFC4104EB

Sehemu ya hisa.: 2158

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IPU60R1K4C6AKMA1

IPU60R1K4C6AKMA1

Sehemu ya hisa.: 193303

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.2A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.1A, 10V,

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IPP120N06S403AKSA2

IPP120N06S403AKSA2

Sehemu ya hisa.: 6273

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V,

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IRLC8259ED

IRLC8259ED

Sehemu ya hisa.: 2102

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IRF2204SPBF

IRF2204SPBF

Sehemu ya hisa.: 19749

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 170A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 130A, 10V,

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IRFC4227ED

IRFC4227ED

Sehemu ya hisa.: 2167

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IPD60R380E6BTMA1

IPD60R380E6BTMA1

Sehemu ya hisa.: 2150

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10.6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V,

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IRF6623

IRF6623

Sehemu ya hisa.: 5697

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Ta), 55A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V,

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IPC60R380E6UNSAWNX6SA1
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IPB020N10N5ATMA1

IPB020N10N5ATMA1

Sehemu ya hisa.: 23473

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V,

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SPB02N60S5ATMA1

SPB02N60S5ATMA1

Sehemu ya hisa.: 2338

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V,

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IPC60R380E6X7SA1

IPC60R380E6X7SA1

Sehemu ya hisa.: 2296

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IPL60R2K1C6SATMA1

IPL60R2K1C6SATMA1

Sehemu ya hisa.: 148130

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.3A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 760mA, 10V,

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IRF520NPBF

IRF520NPBF

Sehemu ya hisa.: 66586

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.7A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V,

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IPP80N06S405AKSA2

IPP80N06S405AKSA2

Sehemu ya hisa.: 79071

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IRFC3004EB

IRFC3004EB

Sehemu ya hisa.: 2178

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IPI120P04P404AKSA1

IPI120P04P404AKSA1

Sehemu ya hisa.: 46674

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 100A, 10V,

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IPU80R1K2P7AKMA1

IPU80R1K2P7AKMA1

Sehemu ya hisa.: 53072

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.7A, 10V,

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IPS031N03LGAKMA1

IPS031N03LGAKMA1

Sehemu ya hisa.: 2172

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IRFC8721ED

IRFC8721ED

Sehemu ya hisa.: 2127

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IRFC3710ZEB

IRFC3710ZEB

Sehemu ya hisa.: 2186

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IPS70R600CEAKMA2

IPS70R600CEAKMA2

Sehemu ya hisa.: 189204

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IPD06N03LB G

IPD06N03LB G

Sehemu ya hisa.: 2345

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 50A, 10V,

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IRF9540NSTRLPBF

IRF9540NSTRLPBF

Sehemu ya hisa.: 95092

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 23A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 117 mOhm @ 14A, 10V,

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SPP80N06S08NK

SPP80N06S08NK

Sehemu ya hisa.: 2346

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 80A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 8 mOhm @ 80A, 10V,

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IRLC8256ED

IRLC8256ED

Sehemu ya hisa.: 2131

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SPP04N80C3XK

SPP04N80C3XK

Sehemu ya hisa.: 2281

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.5A, 10V,

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IRFC3205ZEB

IRFC3205ZEB

Sehemu ya hisa.: 2163

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IPI120P04P4L03AKSA1

IPI120P04P4L03AKSA1

Sehemu ya hisa.: 46612

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V,

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IRFC3206EB

IRFC3206EB

Sehemu ya hisa.: 2166

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IPP80P04P407AKSA1

IPP80P04P407AKSA1

Sehemu ya hisa.: 74726

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 80A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V,

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IPP023NE7N3G

IPP023NE7N3G

Sehemu ya hisa.: 2314

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V,

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IPC90R120C3X1SA1

IPC90R120C3X1SA1

Sehemu ya hisa.: 5923

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