Transistors - FETs, MOSFETs - Moja

VMO550-01F

VMO550-01F

Sehemu ya hisa.: 517

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 590A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 500mA, 10V,

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IXFH44N50P

IXFH44N50P

Sehemu ya hisa.: 7146

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 44A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 140 mOhm @ 22A, 10V,

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IXTP180N10T

IXTP180N10T

Sehemu ya hisa.: 17444

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 180A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 25A, 10V,

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IXFN60N80P

IXFN60N80P

Sehemu ya hisa.: 2509

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 53A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 140 mOhm @ 30A, 10V,

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IXFK210N30X3

IXFK210N30X3

Sehemu ya hisa.: 2674

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 300V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 210A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 105A, 10V,

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IXTT16P60P

IXTT16P60P

Sehemu ya hisa.: 6399

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 720 mOhm @ 500mA, 10V,

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IXTX32P60P

IXTX32P60P

Sehemu ya hisa.: 4180

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 32A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 350 mOhm @ 16A, 10V,

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IXFY36N20X3

IXFY36N20X3

Sehemu ya hisa.: 2543

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 36A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 45 mOhm @ 18A, 10V,

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IXFN360N10T

IXFN360N10T

Sehemu ya hisa.: 3333

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 360A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 180A, 10V,

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IXTK90N25L2

IXTK90N25L2

Sehemu ya hisa.: 2694

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 90A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 33 mOhm @ 45A, 10V,

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IXFN36N100

IXFN36N100

Sehemu ya hisa.: 1318

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 36A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 10V,

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IXTH20N65X

IXTH20N65X

Sehemu ya hisa.: 9458

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 210 mOhm @ 10A, 10V,

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IXFK120N30P3

IXFK120N30P3

Sehemu ya hisa.: 5371

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 300V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 27 mOhm @ 60A, 10V,

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IXTY44N10T

IXTY44N10T

Sehemu ya hisa.: 38359

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 44A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 30 mOhm @ 22A, 10V,

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IXTA36N30P

IXTA36N30P

Sehemu ya hisa.: 19177

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 300V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 36A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V,

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IXFH15N80Q

IXFH15N80Q

Sehemu ya hisa.: 4400

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 600 mOhm @ 7.5A, 10V,

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IXTH16N20D2

IXTH16N20D2

Sehemu ya hisa.: 7016

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Tc), Rds On (Max) @ Id, Vgs: 73 mOhm @ 8A, 0V,

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IXFN82N60P

IXFN82N60P

Sehemu ya hisa.: 2430

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 72A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 75 mOhm @ 41A, 10V,

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IXFA6N120P

IXFA6N120P

Sehemu ya hisa.: 9491

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 500mA, 10V,

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IXFA4N100Q

IXFA4N100Q

Sehemu ya hisa.: 9716

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V,

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IXTH160N10T

IXTH160N10T

Sehemu ya hisa.: 16687

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 160A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V,

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IXFH340N075T2

IXFH340N075T2

Sehemu ya hisa.: 7908

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 340A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V,

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IXFX140N30P

IXFX140N30P

Sehemu ya hisa.: 4144

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 300V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 140A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 24 mOhm @ 70A, 10V,

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IXFP6N120P

IXFP6N120P

Sehemu ya hisa.: 9733

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 500mA, 10V,

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IXTP6N50D2

IXTP6N50D2

Sehemu ya hisa.: 11112

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Tc), Rds On (Max) @ Id, Vgs: 500 mOhm @ 3A, 0V,

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IXTH16P60P

IXTH16P60P

Sehemu ya hisa.: 7202

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 720 mOhm @ 500mA, 10V,

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IXTA6N50D2

IXTA6N50D2

Sehemu ya hisa.: 11009

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Tc), Rds On (Max) @ Id, Vgs: 500 mOhm @ 3A, 0V,

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IXTH02N450HV

IXTH02N450HV

Sehemu ya hisa.: 3525

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 4500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 625 Ohm @ 10mA, 10V,

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IXFL38N100Q2

IXFL38N100Q2

Sehemu ya hisa.: 1585

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 29A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 280 mOhm @ 19A, 10V,

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IXFP14N85X

IXFP14N85X

Sehemu ya hisa.: 13815

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 850V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V,

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IXTT30N60L2

IXTT30N60L2

Sehemu ya hisa.: 4430

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V,

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IXTX60N50L2

IXTX60N50L2

Sehemu ya hisa.: 2538

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 30A, 10V,

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IXFN340N07

IXFN340N07

Sehemu ya hisa.: 1857

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 70V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 340A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4 mOhm @ 100A, 10V,

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IXTN22N100L

IXTN22N100L

Sehemu ya hisa.: 1747

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 22A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 600 mOhm @ 11A, 20V,

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IXFX48N50Q

IXFX48N50Q

Sehemu ya hisa.: 3745

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 48A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 24A, 10V,

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IXTA96P085T

IXTA96P085T

Sehemu ya hisa.: 13078

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 85V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 96A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13 mOhm @ 48A, 10V,

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