Transistors - FETs, MOSFETs - Moja

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Transistors - FETs, MOSFETs - Moja

IXFH15N100Q3

Sehemu ya hisa.: 5465

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 7.5A, 10V,

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IXFP4N100Q

Sehemu ya hisa.: 10756

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V,

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IXTA180N10T

Sehemu ya hisa.: 16064

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 180A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 25A, 10V,

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IXTH48P20P

Sehemu ya hisa.: 7182

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 48A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V,

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IXFX44N80P

Sehemu ya hisa.: 4345

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 44A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 190 mOhm @ 22A, 10V,

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IXTP3N120

Sehemu ya hisa.: 10020

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 500mA, 10V,

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IXFP80N25X3

Sehemu ya hisa.: 10355

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 80A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 40A, 10V,

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IXFH120N30X3

Sehemu ya hisa.: 2085

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 300V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 11 mOhm @ 60A, 10V,

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IXFN48N50

Sehemu ya hisa.: 2915

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 48A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 10V,

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IXFN360N15T2

Sehemu ya hisa.: 1980

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 310A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4 mOhm @ 60A, 10V,

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IXTH110N10L2

Sehemu ya hisa.: 4933

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 110A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 18 mOhm @ 500mA, 10V,

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IXTP140P05T

Sehemu ya hisa.: 10902

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 50V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 140A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 9 mOhm @ 70A, 10V,

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IXFK240N15T2

Sehemu ya hisa.: 4298

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 240A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V,

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IXFH80N65X2

Sehemu ya hisa.: 6065

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 80A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 40 mOhm @ 40A, 10V,

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IXTA26P20P

Sehemu ya hisa.: 12299

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 26A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 170 mOhm @ 13A, 10V,

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IXTY1R6N100D2

Sehemu ya hisa.: 29064

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 10 Ohm @ 800mA, 0V,

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IXFN230N20T

Sehemu ya hisa.: 2564

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 220A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 60A, 10V,

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IXFH50N20

Sehemu ya hisa.: 6554

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V,

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IXTA76P10T

Sehemu ya hisa.: 13076

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 76A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V,

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IXTN5N250

Sehemu ya hisa.: 1367

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 2500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 8.8 Ohm @ 2.5A, 10V,

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IXTH30N60L2

Sehemu ya hisa.: 4726

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V,

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IXFY26N30X3

Sehemu ya hisa.: 4782

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 300V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 26A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 66 mOhm @ 13A, 10V,

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IXTY1R6N50D2

Sehemu ya hisa.: 29105

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 800mA, 0V,

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IXTA200N055T2

Sehemu ya hisa.: 22368

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V,

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IXFE36N100

Sehemu ya hisa.: 1537

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 33A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 240 mOhm @ 18A, 10V,

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IXTN62N50L

Sehemu ya hisa.: 1470

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 62A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 20V,

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IXTH76P10T

Sehemu ya hisa.: 10468

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 76A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V,

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IXFX64N60P

Sehemu ya hisa.: 4010

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 64A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 96 mOhm @ 500mA, 10V,

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IXTP01N100D

Sehemu ya hisa.: 14895

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100mA (Tc), Rds On (Max) @ Id, Vgs: 110 Ohm @ 50mA, 0V,

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IXTT16N20D2

Sehemu ya hisa.: 6403

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Tc), Rds On (Max) @ Id, Vgs: 73 mOhm @ 8A, 0V,

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IXFH12N100

Sehemu ya hisa.: 4396

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 6A, 10V,

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IXTA80N10T

Sehemu ya hisa.: 23173

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 80A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V,

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IXFN80N50P

Sehemu ya hisa.: 2885

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 66A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 65 mOhm @ 500mA, 10V,

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IXTH20P50P

Sehemu ya hisa.: 7253

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 450 mOhm @ 10A, 10V,

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IXFY30N25X3

Sehemu ya hisa.: 4550

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 60 mOhm @ 15A, 10V,

Wishlist.

IXTH90P10P

Sehemu ya hisa.: 7189

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 90A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 45A, 10V,

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