Transistors - FETs, MOSFETs - Moja | Bidhaa tofauti za semiconductor | 6

2N6661

Sehemu ya hisa.: 6316

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 90V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 350mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

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Microchip Technology

2N7008-G

Sehemu ya hisa.: 138197

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 230mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

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Microchip Technology

2N6660

Sehemu ya hisa.: 6315

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 410mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

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Microchip Technology

2N7002-G

Sehemu ya hisa.: 134471

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 115mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

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Microchip Technology

2N7000-G

Sehemu ya hisa.: 187823

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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Microchip Technology

VP0550N3-G-P013

Sehemu ya hisa.: 53675

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 54mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 125 Ohm @ 10mA, 10V,

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Microchip Technology

TN2540N3-G-P002

Sehemu ya hisa.: 74193

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 400V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 175mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12 Ohm @ 500mA, 10V,

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Microchip Technology

MCP87030T-U/MF

Sehemu ya hisa.: 103880

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V,

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Microchip Technology

MCP87050T-U/MF

Sehemu ya hisa.: 146526

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V,

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Microchip Technology

VN0300L-G-P002

Sehemu ya hisa.: 81152

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 640mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1A, 10V,

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Microchip Technology

VN1206L-G-P002

Sehemu ya hisa.: 58212

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 120V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 230mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V,

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Microchip Technology

TN0620N3-G-P002

Sehemu ya hisa.: 71231

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 250mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V,

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Microchip Technology

TN2130K1-G

Sehemu ya hisa.: 145339

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 300V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 85mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 4.5V,

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Microchip Technology

VN0104N3-G-P013

Sehemu ya hisa.: 139578

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 350mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

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Microchip Technology

TN2640LG-G

Sehemu ya hisa.: 51374

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 400V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 260mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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Microchip Technology

VP2206N3-G-P003

Sehemu ya hisa.: 46577

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 640mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V,

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Microchip Technology

TP2502N8-G

Sehemu ya hisa.: 77492

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 630mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V,

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Microchip Technology

TP2435N8-G

Sehemu ya hisa.: 67130

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 350V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 231mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 3V, 10V, Rds On (Max) @ Id, Vgs: 15 Ohm @ 500mA, 10V,

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Microchip Technology

MCP87022T-U/MF

Sehemu ya hisa.: 69227

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V,

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Microchip Technology

TN0610N3-G-P013

Sehemu ya hisa.: 89494

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 500mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 3V, 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V,

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Microchip Technology

LND150N3-G-P013

Sehemu ya hisa.: 183588

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V,

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Microchip Technology

DN1509N8-G

Sehemu ya hisa.: 131170

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 90V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 360mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 200mA, 0V,

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Microchip Technology

TN0106N3-G-P003

Sehemu ya hisa.: 112566

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 350mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V,

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Microchip Technology

TN0604N3-G-P013

Sehemu ya hisa.: 87261

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 700mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.5A, 10V,

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Microchip Technology

MCP87090T-U/LC

Sehemu ya hisa.: 199305

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 48A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10V,

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Microchip Technology

DN2535N3-G-P013

Sehemu ya hisa.: 124551

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 350V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V,

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Microchip Technology

LND150N3-G-P014

Sehemu ya hisa.: 183620

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V,

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Microchip Technology

TN0610N3-G-P003

Sehemu ya hisa.: 89433

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 500mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 3V, 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V,

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Microchip Technology

TP2424N8-G

Sehemu ya hisa.: 69759

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 240V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 316mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8 Ohm @ 500mA, 10V,

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Microchip Technology

MCP87090T-U/MF

Sehemu ya hisa.: 183616

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 64A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10V,

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Microchip Technology

TN0104N3-G-P014

Sehemu ya hisa.: 96882

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 450mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 3V, 10V, Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1A, 10V,

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Microchip Technology

TP2520N8-G

Sehemu ya hisa.: 72715

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 260mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V,

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Microchip Technology

VN10KN3-G-P014

Sehemu ya hisa.: 174398

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 310mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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Microchip Technology

VN2460N3-G-P003

Sehemu ya hisa.: 77538

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 160mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 20 Ohm @ 100mA, 10V,

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Microchip Technology

TN2425N8-G

Sehemu ya hisa.: 77566

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 480mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 3V, 10V, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 500mA, 10V,

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Microchip Technology

MIC94051YM4-TR

Sehemu ya hisa.: 191644

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 6V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V,

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