Transistors - FETs, MOSFETs - Moja

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Transistors - FETs, MOSFETs - Moja

Microchip Technology

TN0104N8-G

Sehemu ya hisa.: 87217

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 630mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 3V, 10V, Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V,

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Microchip Technology

TN0604N3-G

Sehemu ya hisa.: 71131

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 700mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.5A, 10V,

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Microchip Technology

DN2530N8-G

Sehemu ya hisa.: 138406

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 300V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 12 Ohm @ 150mA, 0V,

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Microchip Technology

TN2504N8-G

Sehemu ya hisa.: 89487

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 890mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V,

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LND150N3-G-P003

Microchip Technology

LND150N3-G-P003

Sehemu ya hisa.: 183599

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V,

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Microchip Technology

DN2540N3-G

Sehemu ya hisa.: 97638

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 400V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V,

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Microchip Technology

TN5335N8-G

Sehemu ya hisa.: 108979

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 350V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 230mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 3V, 10V, Rds On (Max) @ Id, Vgs: 15 Ohm @ 200mA, 10V,

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Microchip Technology

VN2106N3-G

Sehemu ya hisa.: 187819

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 300mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V,

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Microchip Technology

VN3205N8-G

Sehemu ya hisa.: 68394

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 50V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.5A (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V,

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Microchip Technology

TN5325K1-G

Sehemu ya hisa.: 183601

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 150mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V,

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Microchip Technology

TP5322K1-G

Sehemu ya hisa.: 166067

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 220V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V,

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Microchip Technology

VN2110K1-G

Sehemu ya hisa.: 193820

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V,

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Microchip Technology

TN0702N3-G

Sehemu ya hisa.: 65974

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 530mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2V, 5V, Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 500mA, 5V,

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Microchip Technology

LND01K1-G

Sehemu ya hisa.: 142227

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 9V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 330mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 100mA, 0V,

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Microchip Technology

TN2640K4-G

Sehemu ya hisa.: 43675

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 400V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 500mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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Microchip Technology

VP2106N3-G

Sehemu ya hisa.: 146510

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 250mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 12 Ohm @ 500mA, 10V,

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Microchip Technology

VN2222LL-G

Sehemu ya hisa.: 174426

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 230mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

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Microchip Technology

MIC94030BM4 TR

Sehemu ya hisa.: 9877

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 16V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.7V, 10V, Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V,

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Microchip Technology

MIC94052BC6-TR

Sehemu ya hisa.: 9895

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 6V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V,

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Microchip Technology

MIC94053BC6-TR

Sehemu ya hisa.: 9815

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 6V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V,

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Microchip Technology

MIC94050BM4 TR

Sehemu ya hisa.: 9820

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 6V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V,

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Microchip Technology

MIC94051BM4 TR

Sehemu ya hisa.: 9843

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 6V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V,

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Microchip Technology

TP5335K1-G

Sehemu ya hisa.: 109016

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 350V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 85mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 30 Ohm @ 200mA, 10V,

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Microchip Technology

VP2110K1-G

Sehemu ya hisa.: 158520

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 12 Ohm @ 500mA, 10V,

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Microchip Technology

LND250K1-G

Sehemu ya hisa.: 182364

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V,

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Microchip Technology

TN2524N8-G

Sehemu ya hisa.: 81176

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 240V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 360mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V,

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Microchip Technology

MIC94052YC6-TR

Sehemu ya hisa.: 171800

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 6V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V,

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Microchip Technology

MIC94031BM4 TR

Sehemu ya hisa.: 9583

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 16V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.7V, 10V, Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V,

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Microchip Technology

TN2106K1-G

Sehemu ya hisa.: 193802

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 280mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 500mA, 10V,

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Microchip Technology

MIC94031YM4-TR

Sehemu ya hisa.: 9555

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 16V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.7V, 10V, Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V,

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Microchip Technology

DN3135N8-G

Sehemu ya hisa.: 151019

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 350V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 135mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 35 Ohm @ 150mA, 0V,

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Microchip Technology

DN2540N8-G

Sehemu ya hisa.: 115855

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 400V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 170mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V,

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Microchip Technology

DN3545N8-G

Sehemu ya hisa.: 124604

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 450V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA, Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 0V,

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Microchip Technology

DN2625K4-G

Sehemu ya hisa.: 75520

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.1A (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1A, 0V,

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Microchip Technology

VN2450N8-G

Sehemu ya hisa.: 83065

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 250mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 13 Ohm @ 400mA, 10V,

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Microchip Technology

DN3135K1-G

Sehemu ya hisa.: 178009

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 350V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 72mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, Rds On (Max) @ Id, Vgs: 35 Ohm @ 150mA, 0V,

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