Transistors - FETs, MOSFETs - safu | Bidhaa tofauti za semiconductor | 7

APTM20DUM05G

Sehemu ya hisa.: 536

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 317A, Rds On (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM100H35FTG

Sehemu ya hisa.: 731

Aina ya FET: 4 N-Channel (H-Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 1000V (1kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 22A, Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50AM35FTG

Sehemu ya hisa.: 766

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 99A, Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM50HM65FTG

Sehemu ya hisa.: 767

Aina ya FET: 4 N-Channel (H-Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 51A, Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM100TA35FPG

Sehemu ya hisa.: 533

Aina ya FET: 6 N-Channel (3-Phase Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 1000V (1kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 22A, Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTC60HM70T1G

Sehemu ya hisa.: 1743

Aina ya FET: 4 N-Channel (H-Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 39A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

APTM50HM35FG

Sehemu ya hisa.: 448

Aina ya FET: 4 N-Channel (H-Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 99A, Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM60A11FT1G

Sehemu ya hisa.: 2026

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 40A, Rds On (Max) @ Id, Vgs: 132 mOhm @ 33A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTC60DHM24T3G

Sehemu ya hisa.: 1204

Aina ya FET: 2 N-Channel (Dual) Asymmetrical, Makala ya FET: Super Junction, Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTC60AM24SCTG

Sehemu ya hisa.: 712

Aina ya FET: 2 N Channel (Phase Leg), Makala ya FET: Super Junction, Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTMC120HM17CT3AG

Sehemu ya hisa.: 306

Aina ya FET: 4 N-Channel, Makala ya FET: Silicon Carbide (SiC), Futa kwa Chanzo cha Voltage (Vdss): 1200V (1.2kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 147A (Tc), Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 4V @ 30mA,

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Microsemi Corporation

APTM50DDA10T3G

Sehemu ya hisa.: 1671

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 37A, Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM50HM38FG

Sehemu ya hisa.: 461

Aina ya FET: 4 N-Channel (H-Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 90A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM120A15FG

Sehemu ya hisa.: 396

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 1200V (1.2kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A, Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTC80TDU15PG

Sehemu ya hisa.: 936

Aina ya FET: 6 N-Channel (3-Phase Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

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Microsemi Corporation

APTM50AM17FG

Sehemu ya hisa.: 423

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 180A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM10DUM02G

Sehemu ya hisa.: 488

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 495A, Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V, Vgs (th) (Max) @ Id: 4V @ 10mA,

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Microsemi Corporation

APTMC170AM60CT1AG

Sehemu ya hisa.: 196

Aina ya FET: 2 N Channel (Phase Leg), Makala ya FET: Silicon Carbide (SiC), Futa kwa Chanzo cha Voltage (Vdss): 1700V (1.7kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Rds On (Max) @ Id, Vgs: 60 mOhm @ 50A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 2.5mA (Typ),

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Microsemi Corporation

APTC60VDAM45T1G

Sehemu ya hisa.: 1797

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Super Junction, Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 49A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

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Microsemi Corporation

APTM120H29FG

Sehemu ya hisa.: 261

Aina ya FET: 4 N-Channel (H-Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 1200V (1.2kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 34A, Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM10HM05FG

Sehemu ya hisa.: 446

Aina ya FET: 4 N-Channel (H-Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 278A, Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs (th) (Max) @ Id: 4V @ 5mA,

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Microsemi Corporation

APTM50H15FT1G

Sehemu ya hisa.: 2107

Aina ya FET: 4 N-Channel (H-Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 25A, Rds On (Max) @ Id, Vgs: 180 mOhm @ 21A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTMC170AM30CT1AG

Sehemu ya hisa.: 139

Aina ya FET: 2 N Channel (Phase Leg), Makala ya FET: Silicon Carbide (SiC), Futa kwa Chanzo cha Voltage (Vdss): 1700V (1.7kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Rds On (Max) @ Id, Vgs: 30 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 5mA (Typ),

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Microsemi Corporation

APTM08TAM04PG

Sehemu ya hisa.: 1065

Aina ya FET: 6 N-Channel (3-Phase Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A, Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTM20HM08FG

Sehemu ya hisa.: 381

Aina ya FET: 4 N-Channel (H-Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 208A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20AM05FG

Sehemu ya hisa.: 433

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 317A, Rds On (Max) @ Id, Vgs: 5 mOhm @ 158.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM10HM09FT3G

Sehemu ya hisa.: 940

Aina ya FET: 4 N-Channel (H-Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 139A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM10HM19FT3G

Sehemu ya hisa.: 1470

Aina ya FET: 4 N-Channel (H-Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 70A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTC60HM83FT2G

Sehemu ya hisa.: 1719

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 36A, Rds On (Max) @ Id, Vgs: 83 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 5V @ 3mA,

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Microsemi Corporation

APTC80H15T1G

Sehemu ya hisa.: 1728

Aina ya FET: 4 N-Channel (H-Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

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Microsemi Corporation

APTM50AM38SCTG

Sehemu ya hisa.: 599

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Silicon Carbide (SiC), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 90A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20HM10FG

Sehemu ya hisa.: 489

Aina ya FET: 4 N-Channel (H-Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 175A, Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTC60HM45SCTG

Sehemu ya hisa.: 743

Aina ya FET: 4 N-Channel (H-Bridge), Makala ya FET: Super Junction, Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 49A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 22.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

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Microsemi Corporation

APTC80H15T3G

Sehemu ya hisa.: 1759

Aina ya FET: 4 N-Channel (H-Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

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Microsemi Corporation

APTC60HM35T3G

Sehemu ya hisa.: 248

Aina ya FET: 4 N-Channel (H-Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 72A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,

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Microsemi Corporation

APTM50TAM65FPG

Sehemu ya hisa.: 545

Aina ya FET: 6 N-Channel (3-Phase Bridge), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 51A, Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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