Sehemu ya hisa.: 2760
Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Silicon Carbide (SiC), Futa kwa Chanzo cha Voltage (Vdss): 1000V (1kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 36A, Rds On (Max) @ Id, Vgs: 270 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,