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Transistors - FETs, MOSFETs - Moja

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  • Transistors - FETs, MOSFETs - Moja
NTD14N03RT4G
ON Semiconductor

NTD14N03RT4G

Sehemu ya hisa.: 159388

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V,

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FDS9431A
ON Semiconductor

FDS9431A

Sehemu ya hisa.: 164437

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.5A, 4.5V,

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FQD10N20LTM
ON Semiconductor

FQD10N20LTM

Sehemu ya hisa.: 159394

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 360 mOhm @ 3.8A, 10V,

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NVTR0202PLT1G
ON Semiconductor

NVTR0202PLT1G

Sehemu ya hisa.: 118064

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 400mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 800 mOhm @ 200mA, 10V,

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NTJS3157NT1G
ON Semiconductor

NTJS3157NT1G

Sehemu ya hisa.: 174664

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 4.5V,

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FDS6679
ON Semiconductor

FDS6679

Sehemu ya hisa.: 89382

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9 mOhm @ 13A, 10V,

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FQD5N60CTM
ON Semiconductor

FQD5N60CTM

Sehemu ya hisa.: 109427

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V,

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FQB7N60TM
ON Semiconductor

FQB7N60TM

Sehemu ya hisa.: 61079

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.7A, 10V,

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FDS6692A
ON Semiconductor

FDS6692A

Sehemu ya hisa.: 193799

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 9A, 10V,

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FDB8896
ON Semiconductor

FDB8896

Sehemu ya hisa.: 87223

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 19A (Ta), 93A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 35A, 10V,

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FDP3682
ON Semiconductor

FDP3682

Sehemu ya hisa.: 38140

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Ta), 32A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 36 mOhm @ 32A, 10V,

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HUF75329D3ST
ON Semiconductor

HUF75329D3ST

Sehemu ya hisa.: 136075

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V,

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FDS3580
ON Semiconductor

FDS3580

Sehemu ya hisa.: 89335

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 29 mOhm @ 7.6A, 10V,

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NTD5C464NT4G
ON Semiconductor

NTD5C464NT4G

Sehemu ya hisa.: 99

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 19A (Ta), 59A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 30A, 10V,

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FDPF8D5N10C
ON Semiconductor

FDPF8D5N10C

Sehemu ya hisa.: 42

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 76A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 76A, 10V,

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FQD13N06LTM
ON Semiconductor

FQD13N06LTM

Sehemu ya hisa.: 159980

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 115 mOhm @ 5.5A, 10V,

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SVD5867NLT4G
ON Semiconductor

SVD5867NLT4G

Sehemu ya hisa.: 107971

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 22A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 39 mOhm @ 11A, 10V,

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FQD6N50CTM
ON Semiconductor

FQD6N50CTM

Sehemu ya hisa.: 165446

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V,

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FQD12N20TM
ON Semiconductor

FQD12N20TM

Sehemu ya hisa.: 106913

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.5A, 10V,

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FQD13N10LTM
ON Semiconductor

FQD13N10LTM

Sehemu ya hisa.: 120408

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 5A, 10V,

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FQD7N30TM
ON Semiconductor

FQD7N30TM

Sehemu ya hisa.: 153217

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 300V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 700 mOhm @ 2.75A, 10V,

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FDH038AN08A1
ON Semiconductor

FDH038AN08A1

Sehemu ya hisa.: 9972

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 22A (Ta), 80A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V,

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FDMA037N08LC
ON Semiconductor

FDMA037N08LC

Sehemu ya hisa.: 84

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 36.5 mOhm @ 4A, 10V,

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NTR3C21NZT3G
ON Semiconductor

NTR3C21NZT3G

Sehemu ya hisa.: 154093

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 24 mOhm @ 5A, 4.5V,

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ECH8420-TL-H
ON Semiconductor

ECH8420-TL-H

Sehemu ya hisa.: 112533

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 7A, 4.5V,

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FDP030N06B-F102
ON Semiconductor

FDP030N06B-F102

Sehemu ya hisa.: 98

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 100A, 10V,

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FQD13N10TM
ON Semiconductor

FQD13N10TM

Sehemu ya hisa.: 143686

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 5A, 10V,

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FDS8896
ON Semiconductor

FDS8896

Sehemu ya hisa.: 158257

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V,

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NTLUS3C18PZTBG
ON Semiconductor

NTLUS3C18PZTBG

Sehemu ya hisa.: 163997

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 4.5V,

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MCH6445-TL-W
ON Semiconductor

MCH6445-TL-W

Sehemu ya hisa.: 158731

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 10V,

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FDPF39N20TLDTU
ON Semiconductor

FDPF39N20TLDTU

Sehemu ya hisa.: 46321

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 39A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 66 mOhm @ 19.5A, 10V,

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FDD2582
ON Semiconductor

FDD2582

Sehemu ya hisa.: 109847

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.7A (Ta), 21A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 66 mOhm @ 7A, 10V,

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HUF75321D3ST
ON Semiconductor

HUF75321D3ST

Sehemu ya hisa.: 167423

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 36 mOhm @ 20A, 10V,

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NVD6495NLT4G-VF01
ON Semiconductor

NVD6495NLT4G-VF01

Sehemu ya hisa.: 159757

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 25A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 50 mOhm @ 10A, 10V,

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NVD5C486NT4G
ON Semiconductor

NVD5C486NT4G

Sehemu ya hisa.: 143

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.2A (Ta), 23A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 10A, 10V,

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FQP2N40-F080
ON Semiconductor

FQP2N40-F080

Sehemu ya hisa.: 151

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 400V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5.8 Ohm @ 900mA, 10V,

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