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Transistors - FETs, MOSFETs - Moja

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  • Transistors - FETs, MOSFETs - Moja
HUF76439S3ST
ON Semiconductor

HUF76439S3ST

Sehemu ya hisa.: 52379

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 75A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V,

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FDB045AN08A0-F085
ON Semiconductor

FDB045AN08A0-F085

Sehemu ya hisa.: 64

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 19A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 80A, 10V,

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NTD4904NT4G
ON Semiconductor

NTD4904NT4G

Sehemu ya hisa.: 178458

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), 79A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 30A, 10V,

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NTD24N06T4G
ON Semiconductor

NTD24N06T4G

Sehemu ya hisa.: 183950

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 24A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 42 mOhm @ 10A, 10V,

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FDP7N60NZ
ON Semiconductor

FDP7N60NZ

Sehemu ya hisa.: 89755

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3.25A, 10V,

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FDD86110
ON Semiconductor

FDD86110

Sehemu ya hisa.: 65814

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12.5A (Ta), 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 10.2 mOhm @ 12.5A, 10V,

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FDP150N10A-F102
ON Semiconductor

FDP150N10A-F102

Sehemu ya hisa.: 88

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 15 mOhm @ 50A, 10V,

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FQP6N80C
ON Semiconductor

FQP6N80C

Sehemu ya hisa.: 89271

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2.75A, 10V,

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NTLUS4C12NTAG
ON Semiconductor

NTLUS4C12NTAG

Sehemu ya hisa.: 154063

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 3.3V, 10V, Rds On (Max) @ Id, Vgs: 9 mOhm @ 9A, 10V,

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NVD5C460NLT4G
ON Semiconductor

NVD5C460NLT4G

Sehemu ya hisa.: 129

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18A (Ta), 73A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V,

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FDD6680AS
ON Semiconductor

FDD6680AS

Sehemu ya hisa.: 165412

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 55A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 12.5A, 10V,

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CPH3350-TL-W
ON Semiconductor

CPH3350-TL-W

Sehemu ya hisa.: 144634

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 83 mOhm @ 1.5A, 4.5V,

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FDD3690
ON Semiconductor

FDD3690

Sehemu ya hisa.: 118201

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 22A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 64 mOhm @ 5.4A, 10V,

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FQB11N40CTM
ON Semiconductor

FQB11N40CTM

Sehemu ya hisa.: 83287

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 400V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 530 mOhm @ 5.25A, 10V,

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ECH8309-TL-H
ON Semiconductor

ECH8309-TL-H

Sehemu ya hisa.: 156152

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 4.5A, 4.5V,

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FDMC2674
ON Semiconductor

FDMC2674

Sehemu ya hisa.: 113572

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 220V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1A (Ta), 7A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 366 mOhm @ 1A, 10V,

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FDMS7672AS
ON Semiconductor

FDMS7672AS

Sehemu ya hisa.: 155908

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 19A (Ta), 42A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4 mOhm @ 18A, 10V,

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NVMFS5A160PLZT1G
ON Semiconductor

NVMFS5A160PLZT1G

Sehemu ya hisa.: 72

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15A (Ta), 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 50A, 10V,

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NVATS68301PZT4G
ON Semiconductor

NVATS68301PZT4G

Sehemu ya hisa.: 118

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 31A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 75 mOhm @ 14A, 10V,

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MCH3375-TL-W-Z
ON Semiconductor

MCH3375-TL-W-Z

Sehemu ya hisa.: 110864

Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V,

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FQD7N10LTM
ON Semiconductor

FQD7N10LTM

Sehemu ya hisa.: 145414

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.9A, 10V,

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FDD8445
ON Semiconductor

FDD8445

Sehemu ya hisa.: 134304

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 70A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 50A, 10V,

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FQD2N60CTM
ON Semiconductor

FQD2N60CTM

Sehemu ya hisa.: 190174

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.9A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 950mA, 10V,

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NVATS5A108PLZT4G
ON Semiconductor

NVATS5A108PLZT4G

Sehemu ya hisa.: 84654

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 77A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 35A, 10V,

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FDB0630N1507L
ON Semiconductor

FDB0630N1507L

Sehemu ya hisa.: 19651

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 130A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 18A, 10V,

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NVE4153NT1G
ON Semiconductor

NVE4153NT1G

Sehemu ya hisa.: 169814

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 915mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 230 mOhm @ 600mA, 4.5V,

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FDS6298
ON Semiconductor

FDS6298

Sehemu ya hisa.: 134298

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9 mOhm @ 13A, 10V,

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NVGS3130NT1G
ON Semiconductor

NVGS3130NT1G

Sehemu ya hisa.: 154395

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.6A, 4.5V,

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FDB024N04AL7
ON Semiconductor

FDB024N04AL7

Sehemu ya hisa.: 30642

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 80A, 10V,

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FDS8870
ON Semiconductor

FDS8870

Sehemu ya hisa.: 94656

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 18A, 10V,

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MCH6337-TL-W
ON Semiconductor

MCH6337-TL-W

Sehemu ya hisa.: 104594

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 49 mOhm @ 3A, 4.5V,

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FQB8N90CTM
ON Semiconductor

FQB8N90CTM

Sehemu ya hisa.: 48227

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.3A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3.15A, 10V,

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NVATS4A102PZT4G
ON Semiconductor

NVATS4A102PZT4G

Sehemu ya hisa.: 163879

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 44A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 20A, 10V,

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FDD1600N10ALZ
ON Semiconductor

FDD1600N10ALZ

Sehemu ya hisa.: 154084

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 160 mOhm @ 3.4A, 10V,

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FQB4N80TM
ON Semiconductor

FQB4N80TM

Sehemu ya hisa.: 83054

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.9A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.95A, 10V,

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FQT4N25TF
ON Semiconductor

FQT4N25TF

Sehemu ya hisa.: 170007

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 830mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 415mA, 10V,

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