Transistors - FETs, MOSFETs - Moja | Bidhaa tofauti za semiconductor | 18

R6015FNX

Sehemu ya hisa.: 11226

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 350 mOhm @ 7.5A, 10V,

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Rohm Semiconductor

RCX510N25

Sehemu ya hisa.: 15729

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 51A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V,

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Rohm Semiconductor

R6004KNJTL

Sehemu ya hisa.: 75363

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 980 mOhm @ 1.5A, 10V,

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Rohm Semiconductor

SCT2750NYTB

Sehemu ya hisa.: 15479

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1700V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.9A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 18V, Rds On (Max) @ Id, Vgs: 975 mOhm @ 1.7A, 18V,

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Rohm Semiconductor

SCT3060ALGC11

Sehemu ya hisa.: 7128

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 39A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 18V, Rds On (Max) @ Id, Vgs: 78 mOhm @ 13A, 18V,

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Rohm Semiconductor

SCH2080KEC

Sehemu ya hisa.: 2547

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 40A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 18V, Rds On (Max) @ Id, Vgs: 117 mOhm @ 10A, 18V,

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Rohm Semiconductor

RRH050P03GZETB

Sehemu ya hisa.: 6288

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V,

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Rohm Semiconductor

SCT3040KLGC11

Sehemu ya hisa.: 2854

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 55A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 18V, Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 18V,

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Rohm Semiconductor

RSS090P03FU7TB

Sehemu ya hisa.: 135899

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 14 mOhm @ 9A, 10V,

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Rohm Semiconductor

RP1E090RPTR

Sehemu ya hisa.: 2073

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 16.9 mOhm @ 9A, 10V,

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Rohm Semiconductor

RCD080N25TL

Sehemu ya hisa.: 99109

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 4A, 10V,

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Rohm Semiconductor

SCT2H12NYTB

Sehemu ya hisa.: 18112

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1700V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 18V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 18V,

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Rohm Semiconductor

SCT3030ALGC11

Sehemu ya hisa.: 3030

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 70A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 18V, Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 18V,

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Rohm Semiconductor

R6004ENDTL

Sehemu ya hisa.: 156482

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 980 mOhm @ 1.5A, 10V,

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Rohm Semiconductor

RAQ045P01TCR

Sehemu ya hisa.: 1902

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V,

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Rohm Semiconductor

RS1E200GNTB

Sehemu ya hisa.: 196672

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V,

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Rohm Semiconductor

RSS065N06FRATB

Sehemu ya hisa.: 10801

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 37 mOhm @ 6.5A, 10V,

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Rohm Semiconductor

RMW130N03TB

Sehemu ya hisa.: 190282

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 13A, 10V,

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Rohm Semiconductor

RMW200N03TB

Sehemu ya hisa.: 116058

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V,

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Rohm Semiconductor

RP1E090XNTCR

Sehemu ya hisa.: 1429

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V,

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Rohm Semiconductor

RP1E070XNTCR

Sehemu ya hisa.: 1473

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V,

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Rohm Semiconductor

RP1E100XNTR

Sehemu ya hisa.: 6211

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V,

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Rohm Semiconductor

RP1E075RPTR

Sehemu ya hisa.: 1446

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.5A, 10V,

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Rohm Semiconductor

RS3E075ATTB

Sehemu ya hisa.: 122522

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 7.5A, 10V,

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Rohm Semiconductor

RSH065N03TB1

Sehemu ya hisa.: 197099

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.5A, 10V,

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Rohm Semiconductor

RSD220N06TL

Sehemu ya hisa.: 102535

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 22A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V,

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Rohm Semiconductor

RP1L080SNTR

Sehemu ya hisa.: 1473

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 24 mOhm @ 8A, 10V,

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Rohm Semiconductor

RS3E135BNGZETB

Sehemu ya hisa.: 183103

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 14.6 mOhm @ 9.5A, 10V,

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Rohm Semiconductor

RND030N20TL

Sehemu ya hisa.: 172245

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 870 mOhm @ 1.5A, 10V,

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Rohm Semiconductor

R6006ANDTL

Sehemu ya hisa.: 68225

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V,

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Rohm Semiconductor

RP1H065SPTR

Sehemu ya hisa.: 1481

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 45V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 31 mOhm @ 6.5A, 10V,

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Rohm Semiconductor

R6004CNDTL

Sehemu ya hisa.: 76158

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V,

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Rohm Semiconductor

RRH100P03GZETB

Sehemu ya hisa.: 101180

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 10A, 10V,

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Rohm Semiconductor

RD3L080SNTL1

Sehemu ya hisa.: 10823

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 80 mOhm @ 8A, 10V,

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Rohm Semiconductor

RS1E280GNTB

Sehemu ya hisa.: 189450

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 28A, 10V,

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Rohm Semiconductor

SCT2160KEC

Sehemu ya hisa.: 7564

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 22A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 18V, Rds On (Max) @ Id, Vgs: 208 mOhm @ 7A, 18V,

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