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Wasimamizi wa Tantalum

TCFGA1C105M8R
Rohm Semiconductor

TCFGA1C105M8R

Sehemu ya hisa.: 2457

Uwezo: 1µF, Uvumilivu: ±20%, Voltage - Imepimwa: 16V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGP0G226M8R
Rohm Semiconductor

TCFGP0G226M8R

Sehemu ya hisa.: 2986

Uwezo: 22µF, Uvumilivu: ±20%, Voltage - Imepimwa: 4V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGA1C106M8R
Rohm Semiconductor

TCFGA1C106M8R

Sehemu ya hisa.: 2725

Uwezo: 10µF, Uvumilivu: ±20%, Voltage - Imepimwa: 16V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGP1A225M8R
Rohm Semiconductor

TCFGP1A225M8R

Sehemu ya hisa.: 3327

Uwezo: 2.2µF, Uvumilivu: ±20%, Voltage - Imepimwa: 10V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGA0J336M8R
Rohm Semiconductor

TCFGA0J336M8R

Sehemu ya hisa.: 1965

Uwezo: 33µF, Uvumilivu: ±20%, Voltage - Imepimwa: 6.3V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGA1D105M8R
Rohm Semiconductor

TCFGA1D105M8R

Sehemu ya hisa.: 2897

Uwezo: 1µF, Uvumilivu: ±20%, Voltage - Imepimwa: 20V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGA1C475M8R
Rohm Semiconductor

TCFGA1C475M8R

Sehemu ya hisa.: 2796

Uwezo: 4.7µF, Uvumilivu: ±20%, Voltage - Imepimwa: 16V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGP0J156M8R
Rohm Semiconductor

TCFGP0J156M8R

Sehemu ya hisa.: 3257

Uwezo: 15µF, Uvumilivu: ±20%, Voltage - Imepimwa: 6.3V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGP0J106M8R
Rohm Semiconductor

TCFGP0J106M8R

Sehemu ya hisa.: 5300

Uwezo: 10µF, Uvumilivu: ±20%, Voltage - Imepimwa: 6.3V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCA0J685M8R
Rohm Semiconductor

TCA0J685M8R

Sehemu ya hisa.: 767

Uwezo: 6.8µF, Uvumilivu: ±20%, Voltage - Imepimwa: 6.3V, Andika: Molded, ESR (Upinzani wa Mfululizo Sawa): 4.2 Ohm, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGA0G476M8R
Rohm Semiconductor

TCFGA0G476M8R

Sehemu ya hisa.: 1415

Uwezo: 47µF, Uvumilivu: ±20%, Voltage - Imepimwa: 4V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGA0J226M8R
Rohm Semiconductor

TCFGA0J226M8R

Sehemu ya hisa.: 1519

Uwezo: 22µF, Uvumilivu: ±20%, Voltage - Imepimwa: 6.3V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCA1A685M8R
Rohm Semiconductor

TCA1A685M8R

Sehemu ya hisa.: 897

Uwezo: 6.8µF, Uvumilivu: ±20%, Voltage - Imepimwa: 10V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCA0G475M8R
Rohm Semiconductor

TCA0G475M8R

Sehemu ya hisa.: 5103

Uwezo: 4.7µF, Uvumilivu: ±20%, Voltage - Imepimwa: 4V, Andika: Molded, ESR (Upinzani wa Mfululizo Sawa): 5.6 Ohm, Joto la Uendeshaji: -55°C ~ 125°C,

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TCP0G225M8R
Rohm Semiconductor

TCP0G225M8R

Sehemu ya hisa.: 693

Uwezo: 2.2µF, Uvumilivu: ±20%, Voltage - Imepimwa: 4V, Andika: Molded, ESR (Upinzani wa Mfululizo Sawa): 17.5 Ohm, Joto la Uendeshaji: -55°C ~ 125°C,

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TCTAL0E227M8R
Rohm Semiconductor

TCTAL0E227M8R

Sehemu ya hisa.: 171809

Uwezo: 220µF, Uvumilivu: ±20%, Voltage - Imepimwa: 2.5V, Andika: Molded, ESR (Upinzani wa Mfululizo Sawa): 2.5 Ohm, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGB0J686M8R
Rohm Semiconductor

TCFGB0J686M8R

Sehemu ya hisa.: 180562

Uwezo: 68µF, Uvumilivu: ±20%, Voltage - Imepimwa: 6.3V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGB1E475M8R
Rohm Semiconductor

TCFGB1E475M8R

Sehemu ya hisa.: 160259

Uwezo: 4.7µF, Uvumilivu: ±20%, Voltage - Imepimwa: 25V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGB0J336M8R
Rohm Semiconductor

TCFGB0J336M8R

Sehemu ya hisa.: 110092

Uwezo: 33µF, Uvumilivu: ±20%, Voltage - Imepimwa: 6.3V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGB0G227M8R
Rohm Semiconductor

TCFGB0G227M8R

Sehemu ya hisa.: 196203

Uwezo: 220µF, Uvumilivu: ±20%, Voltage - Imepimwa: 4V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGB1C336M8R
Rohm Semiconductor

TCFGB1C336M8R

Sehemu ya hisa.: 193123

Uwezo: 33µF, Uvumilivu: ±20%, Voltage - Imepimwa: 16V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGB1C685M8R
Rohm Semiconductor

TCFGB1C685M8R

Sehemu ya hisa.: 192392

Uwezo: 6.8µF, Uvumilivu: ±20%, Voltage - Imepimwa: 16V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCTP0J476M8R
Rohm Semiconductor

TCTP0J476M8R

Sehemu ya hisa.: 195534

Uwezo: 47µF, Uvumilivu: ±20%, Voltage - Imepimwa: 6.3V, Andika: Molded, ESR (Upinzani wa Mfululizo Sawa): 4 Ohm, Joto la Uendeshaji: -55°C ~ 125°C,

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TCM1A106M8R
Rohm Semiconductor

TCM1A106M8R

Sehemu ya hisa.: 193562

Uwezo: 10µF, Uvumilivu: ±20%, Voltage - Imepimwa: 10V, Andika: Molded, ESR (Upinzani wa Mfululizo Sawa): 9 Ohm, Joto la Uendeshaji: -55°C ~ 125°C,

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TCTAL1E475M8R
Rohm Semiconductor

TCTAL1E475M8R

Sehemu ya hisa.: 192808

Uwezo: 4.7µF, Uvumilivu: ±20%, Voltage - Imepimwa: 25V, Andika: Molded, ESR (Upinzani wa Mfululizo Sawa): 8 Ohm, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGB1C335M8R
Rohm Semiconductor

TCFGB1C335M8R

Sehemu ya hisa.: 165699

Uwezo: 3.3µF, Uvumilivu: ±20%, Voltage - Imepimwa: 16V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCTAL1C156M8R
Rohm Semiconductor

TCTAL1C156M8R

Sehemu ya hisa.: 173245

Uwezo: 15µF, Uvumilivu: ±20%, Voltage - Imepimwa: 16V, Andika: Molded, ESR (Upinzani wa Mfululizo Sawa): 4 Ohm, Joto la Uendeshaji: -55°C ~ 125°C,

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TCTAL1A336M8R
Rohm Semiconductor

TCTAL1A336M8R

Sehemu ya hisa.: 172252

Uwezo: 33µF, Uvumilivu: ±20%, Voltage - Imepimwa: 10V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCTP1A226M8R
Rohm Semiconductor

TCTP1A226M8R

Sehemu ya hisa.: 153635

Uwezo: 22µF, Uvumilivu: ±20%, Voltage - Imepimwa: 10V, Andika: Molded, ESR (Upinzani wa Mfululizo Sawa): 5 Ohm, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGB1C226M8R
Rohm Semiconductor

TCFGB1C226M8R

Sehemu ya hisa.: 133748

Uwezo: 22µF, Uvumilivu: ±20%, Voltage - Imepimwa: 16V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCTP0J336M8R
Rohm Semiconductor

TCTP0J336M8R

Sehemu ya hisa.: 119874

Uwezo: 33µF, Uvumilivu: ±20%, Voltage - Imepimwa: 6.3V, Andika: Molded, ESR (Upinzani wa Mfululizo Sawa): 4 Ohm, Joto la Uendeshaji: -55°C ~ 125°C,

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TCM0G106M8R
Rohm Semiconductor

TCM0G106M8R

Sehemu ya hisa.: 103930

Uwezo: 10µF, Uvumilivu: ±20%, Voltage - Imepimwa: 4V, Andika: Molded, ESR (Upinzani wa Mfululizo Sawa): 9 Ohm, Joto la Uendeshaji: -55°C ~ 125°C,

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TCFGB1C475M8R
Rohm Semiconductor

TCFGB1C475M8R

Sehemu ya hisa.: 158067

Uwezo: 4.7µF, Uvumilivu: ±20%, Voltage - Imepimwa: 16V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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TCM0J475M8R
Rohm Semiconductor

TCM0J475M8R

Sehemu ya hisa.: 186180

Uwezo: 4.7µF, Uvumilivu: ±20%, Voltage - Imepimwa: 6.3V, Andika: Molded, ESR (Upinzani wa Mfululizo Sawa): 9 Ohm, Joto la Uendeshaji: -55°C ~ 125°C,

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TCM1C225M8R
Rohm Semiconductor

TCM1C225M8R

Sehemu ya hisa.: 108717

Uwezo: 2.2µF, Uvumilivu: ±20%, Voltage - Imepimwa: 16V, Andika: Molded, ESR (Upinzani wa Mfululizo Sawa): 13.5 Ohm, Joto la Uendeshaji: -55°C ~ 125°C,

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TCTAL1A476M8R
Rohm Semiconductor

TCTAL1A476M8R

Sehemu ya hisa.: 112393

Uwezo: 47µF, Uvumilivu: ±20%, Voltage - Imepimwa: 10V, Andika: Molded, Joto la Uendeshaji: -55°C ~ 125°C,

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