Diode - Warekebishaji - Moja | Bidhaa tofauti za semiconductor | 100

1N4007GHA0G

Sehemu ya hisa.: 122

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1T5G A0G

Sehemu ya hisa.: 87

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4937G A0G

Sehemu ya hisa.: 126

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 200ns,

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Taiwan Semiconductor Corporation

1T7G A0G

Sehemu ya hisa.: 134

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4005GHA0G

Sehemu ya hisa.: 124

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4005G B0G

Sehemu ya hisa.: 100

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1T7G A1G

Sehemu ya hisa.: 148

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5822HR0G

Sehemu ya hisa.: 115

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 525mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5820 R0G

Sehemu ya hisa.: 134

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 475mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5818HR0G

Sehemu ya hisa.: 160

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4005G R0G

Sehemu ya hisa.: 81

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5818 R0G

Sehemu ya hisa.: 84

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5822 R0G

Sehemu ya hisa.: 96

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 525mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4936GHR0G

Sehemu ya hisa.: 131

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 200ns,

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Taiwan Semiconductor Corporation

1N4002GHR0G

Sehemu ya hisa.: 105

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4006GHR0G

Sehemu ya hisa.: 95

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5817HR0G

Sehemu ya hisa.: 95

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 450mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4933GHR0G

Sehemu ya hisa.: 131

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 200ns,

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Taiwan Semiconductor Corporation

1N4002G R0G

Sehemu ya hisa.: 140

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5819 R0G

Sehemu ya hisa.: 83

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 600mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4001GHR0G

Sehemu ya hisa.: 153

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4006G R0G

Sehemu ya hisa.: 89

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4934G R0G

Sehemu ya hisa.: 169

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 200ns,

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Taiwan Semiconductor Corporation

1N4004G R0G

Sehemu ya hisa.: 97

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4001G R0G

Sehemu ya hisa.: 97

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4935GHR0G

Sehemu ya hisa.: 150

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 200ns,

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Taiwan Semiconductor Corporation

1N4007GHR0G

Sehemu ya hisa.: 104

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4003G R0G

Sehemu ya hisa.: 75

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4933G R0G

Sehemu ya hisa.: 91

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 200ns,

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Taiwan Semiconductor Corporation

1N4937G R0G

Sehemu ya hisa.: 100

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 200ns,

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Taiwan Semiconductor Corporation

1N5819HR0G

Sehemu ya hisa.: 137

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 600mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4004GHR0G

Sehemu ya hisa.: 121

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4936G R0G

Sehemu ya hisa.: 120

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 200ns,

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Taiwan Semiconductor Corporation

1N4007G R0G

Sehemu ya hisa.: 119

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4005GHR0G

Sehemu ya hisa.: 165

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5821 R0G

Sehemu ya hisa.: 72

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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