Diode - Warekebishaji - Moja | Bidhaa tofauti za semiconductor | 100

1N5818 R1G

Sehemu ya hisa.: 99

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5404GHA0G

Sehemu ya hisa.: 123

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 3A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5818HA0G

Sehemu ya hisa.: 110

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5821 A0G

Sehemu ya hisa.: 157

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1T6G A0G

Sehemu ya hisa.: 140

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4007GHB0G

Sehemu ya hisa.: 85

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4004G B0G

Sehemu ya hisa.: 95

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5400G B0G

Sehemu ya hisa.: 90

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 3A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5401GHB0G

Sehemu ya hisa.: 169

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 3A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4007G B0G

Sehemu ya hisa.: 91

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4002G A0G

Sehemu ya hisa.: 95

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4002GHA0G

Sehemu ya hisa.: 168

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5817 R1G

Sehemu ya hisa.: 84

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 450mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4936GHB0G

Sehemu ya hisa.: 91

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 200ns,

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Taiwan Semiconductor Corporation

1N4002G R1G

Sehemu ya hisa.: 151

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4003G R1G

Sehemu ya hisa.: 142

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5818HB0G

Sehemu ya hisa.: 124

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1T5G R0G

Sehemu ya hisa.: 145

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4006G B0G

Sehemu ya hisa.: 134

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5406GHB0G

Sehemu ya hisa.: 84

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 3A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5402GHB0G

Sehemu ya hisa.: 152

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 3A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5400GHB0G

Sehemu ya hisa.: 121

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 3A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5819 B0G

Sehemu ya hisa.: 176

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 600mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5821 B0G

Sehemu ya hisa.: 117

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4004GHR1G

Sehemu ya hisa.: 140

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4934G R1G

Sehemu ya hisa.: 85

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 200ns,

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Taiwan Semiconductor Corporation

1N5407GHA0G

Sehemu ya hisa.: 150

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 3A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4934GHR1G

Sehemu ya hisa.: 110

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 200ns,

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Taiwan Semiconductor Corporation

1T2G A1G

Sehemu ya hisa.: 150

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4001G B0G

Sehemu ya hisa.: 103

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5399G A0G

Sehemu ya hisa.: 127

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4001G R1G

Sehemu ya hisa.: 107

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N4001GHA0G

Sehemu ya hisa.: 85

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1N5820 B0G

Sehemu ya hisa.: 165

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 475mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1T4G R0G

Sehemu ya hisa.: 103

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

1T4G A1G

Sehemu ya hisa.: 143

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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