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Diode - Warekebishaji - Moja

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  • Diode - Warekebishaji - Moja
ESH1D M2G
Taiwan Semiconductor Corporation

ESH1D M2G

Sehemu ya hisa.: 95

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 15ns,

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ES3F V7G
Taiwan Semiconductor Corporation

ES3F V7G

Sehemu ya hisa.: 133

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 300V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SK32B M4G
Taiwan Semiconductor Corporation

SK32B M4G

Sehemu ya hisa.: 76

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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US1JHM2G
Taiwan Semiconductor Corporation

US1JHM2G

Sehemu ya hisa.: 94

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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RS2BA R3G
Taiwan Semiconductor Corporation

RS2BA R3G

Sehemu ya hisa.: 69

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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S1DBHR5G
Taiwan Semiconductor Corporation

S1DBHR5G

Sehemu ya hisa.: 136

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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SK115B R5G
Taiwan Semiconductor Corporation

SK115B R5G

Sehemu ya hisa.: 101

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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ES1F M2G
Taiwan Semiconductor Corporation

ES1F M2G

Sehemu ya hisa.: 74

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 300V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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MUR140SHM4G
Taiwan Semiconductor Corporation

MUR140SHM4G

Sehemu ya hisa.: 95

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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MUR340SBHM4G
Taiwan Semiconductor Corporation

MUR340SBHM4G

Sehemu ya hisa.: 73

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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SK19BHR5G
Taiwan Semiconductor Corporation

SK19BHR5G

Sehemu ya hisa.: 90

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 90V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SSL14 M2G
Taiwan Semiconductor Corporation

SSL14 M2G

Sehemu ya hisa.: 73

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 390mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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RS1JHR3G
Taiwan Semiconductor Corporation

RS1JHR3G

Sehemu ya hisa.: 87

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 250ns,

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SS25HR5G
Taiwan Semiconductor Corporation

SS25HR5G

Sehemu ya hisa.: 91

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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S4G V6G
Taiwan Semiconductor Corporation

S4G V6G

Sehemu ya hisa.: 77

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 4A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.5µs,

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SK56C V6G
Taiwan Semiconductor Corporation

SK56C V6G

Sehemu ya hisa.: 97

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 750mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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HS1G M2G
Taiwan Semiconductor Corporation

HS1G M2G

Sehemu ya hisa.: 50

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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SS12HM2G
Taiwan Semiconductor Corporation

SS12HM2G

Sehemu ya hisa.: 71

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SS29HR5G
Taiwan Semiconductor Corporation

SS29HR5G

Sehemu ya hisa.: 101

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 90V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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S3DB M4G
Taiwan Semiconductor Corporation

S3DB M4G

Sehemu ya hisa.: 79

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 3A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.5µs,

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RS2B M4G
Taiwan Semiconductor Corporation

RS2B M4G

Sehemu ya hisa.: 59

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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HS3K V6G
Taiwan Semiconductor Corporation

HS3K V6G

Sehemu ya hisa.: 139

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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HS5M V6G
Taiwan Semiconductor Corporation

HS5M V6G

Sehemu ya hisa.: 133

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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MUR140SHR5G
Taiwan Semiconductor Corporation

MUR140SHR5G

Sehemu ya hisa.: 90

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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SK315B M4G
Taiwan Semiconductor Corporation

SK315B M4G

Sehemu ya hisa.: 65

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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ES2GAHM2G
Taiwan Semiconductor Corporation

ES2GAHM2G

Sehemu ya hisa.: 142

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SK23AHM2G
Taiwan Semiconductor Corporation

SK23AHM2G

Sehemu ya hisa.: 71

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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RS2MAHM2G
Taiwan Semiconductor Corporation

RS2MAHM2G

Sehemu ya hisa.: 120

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 500ns,

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ES2DA M2G
Taiwan Semiconductor Corporation

ES2DA M2G

Sehemu ya hisa.: 56

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SK215A M2G
Taiwan Semiconductor Corporation

SK215A M2G

Sehemu ya hisa.: 103

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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US1KHR3G
Taiwan Semiconductor Corporation

US1KHR3G

Sehemu ya hisa.: 143

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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SSL32 V6G
Taiwan Semiconductor Corporation

SSL32 V6G

Sehemu ya hisa.: 128

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SFF1603G C0G
Taiwan Semiconductor Corporation

SFF1603G C0G

Sehemu ya hisa.: 66

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 16A, Voltage - Sambaza (Vf) (Max) @ Kama: 975mV @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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ES1C M2G
Taiwan Semiconductor Corporation

ES1C M2G

Sehemu ya hisa.: 124

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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HS2A R5G
Taiwan Semiconductor Corporation

HS2A R5G

Sehemu ya hisa.: 54

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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ESH2BA M2G
Taiwan Semiconductor Corporation

ESH2BA M2G

Sehemu ya hisa.: 93

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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