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Diode - Warekebishaji - Moja

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  • Diode - Warekebishaji - Moja
S3ABHM4G
Taiwan Semiconductor Corporation

S3ABHM4G

Sehemu ya hisa.: 111

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 3A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.5µs,

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S4D V6G
Taiwan Semiconductor Corporation

S4D V6G

Sehemu ya hisa.: 142

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 4A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.5µs,

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SK29AHM2G
Taiwan Semiconductor Corporation

SK29AHM2G

Sehemu ya hisa.: 59

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 90V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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S12GC V7G
Taiwan Semiconductor Corporation

S12GC V7G

Sehemu ya hisa.: 58

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 12A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 12A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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RS1B M2G
Taiwan Semiconductor Corporation

RS1B M2G

Sehemu ya hisa.: 48

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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SFF1008GHC0G
Taiwan Semiconductor Corporation

SFF1008GHC0G

Sehemu ya hisa.: 61

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 10A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 10A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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MUR305S V6G
Taiwan Semiconductor Corporation

MUR305S V6G

Sehemu ya hisa.: 100

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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ESH3B V7G
Taiwan Semiconductor Corporation

ESH3B V7G

Sehemu ya hisa.: 74

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 20ns,

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SSL13HM2G
Taiwan Semiconductor Corporation

SSL13HM2G

Sehemu ya hisa.: 134

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 390mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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ES3F V6G
Taiwan Semiconductor Corporation

ES3F V6G

Sehemu ya hisa.: 116

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 300V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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ES2DHM4G
Taiwan Semiconductor Corporation

ES2DHM4G

Sehemu ya hisa.: 119

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SK39A M2G
Taiwan Semiconductor Corporation

SK39A M2G

Sehemu ya hisa.: 110

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 90V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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HS3J V6G
Taiwan Semiconductor Corporation

HS3J V6G

Sehemu ya hisa.: 53

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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SS110HR3G
Taiwan Semiconductor Corporation

SS110HR3G

Sehemu ya hisa.: 99

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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RS1K M2G
Taiwan Semiconductor Corporation

RS1K M2G

Sehemu ya hisa.: 111

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 500ns,

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SK515C V6G
Taiwan Semiconductor Corporation

SK515C V6G

Sehemu ya hisa.: 140

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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US1AHR3G
Taiwan Semiconductor Corporation

US1AHR3G

Sehemu ya hisa.: 67

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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SSL24 M4G
Taiwan Semiconductor Corporation

SSL24 M4G

Sehemu ya hisa.: 109

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 410mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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ES1AHM2G
Taiwan Semiconductor Corporation

ES1AHM2G

Sehemu ya hisa.: 50

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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ESH1B M2G
Taiwan Semiconductor Corporation

ESH1B M2G

Sehemu ya hisa.: 103

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 15ns,

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US1K M2G
Taiwan Semiconductor Corporation

US1K M2G

Sehemu ya hisa.: 113

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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SK13B R5G
Taiwan Semiconductor Corporation

SK13B R5G

Sehemu ya hisa.: 79

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SFF1602GHC0G
Taiwan Semiconductor Corporation

SFF1602GHC0G

Sehemu ya hisa.: 107

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 16A, Voltage - Sambaza (Vf) (Max) @ Kama: 975mV @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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ES2CAHR3G
Taiwan Semiconductor Corporation

ES2CAHR3G

Sehemu ya hisa.: 121

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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HS2K M4G
Taiwan Semiconductor Corporation

HS2K M4G

Sehemu ya hisa.: 107

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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S2JA M2G
Taiwan Semiconductor Corporation

S2JA M2G

Sehemu ya hisa.: 54

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.5µs,

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S1D M2G
Taiwan Semiconductor Corporation

S1D M2G

Sehemu ya hisa.: 142

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.5µs,

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SK215AHM2G
Taiwan Semiconductor Corporation

SK215AHM2G

Sehemu ya hisa.: 62

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SK115BHM4G
Taiwan Semiconductor Corporation

SK115BHM4G

Sehemu ya hisa.: 97

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SK26AHM2G
Taiwan Semiconductor Corporation

SK26AHM2G

Sehemu ya hisa.: 100

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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S2B M4G
Taiwan Semiconductor Corporation

S2B M4G

Sehemu ya hisa.: 119

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 2A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.5µs,

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MUR440S V6G
Taiwan Semiconductor Corporation

MUR440S V6G

Sehemu ya hisa.: 84

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 4A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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HS2KA M2G
Taiwan Semiconductor Corporation

HS2KA M2G

Sehemu ya hisa.: 102

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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SSL12HM2G
Taiwan Semiconductor Corporation

SSL12HM2G

Sehemu ya hisa.: 138

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 390mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SK52C V7G
Taiwan Semiconductor Corporation

SK52C V7G

Sehemu ya hisa.: 75

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SK32AHM2G
Taiwan Semiconductor Corporation

SK32AHM2G

Sehemu ya hisa.: 62

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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