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Diode - Warekebishaji - Moja

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  • Diode - Warekebishaji - Moja
HER106G B0G
Taiwan Semiconductor Corporation

HER106G B0G

Sehemu ya hisa.: 99

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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SK20H45 R0G
Taiwan Semiconductor Corporation

SK20H45 R0G

Sehemu ya hisa.: 136

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 45V, Sasa - Wastani Waliyorekebishwa (Io): 20A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 20A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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FR104G R1G
Taiwan Semiconductor Corporation

FR104G R1G

Sehemu ya hisa.: 159

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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SFA805GHC0G
Taiwan Semiconductor Corporation

SFA805GHC0G

Sehemu ya hisa.: 79

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 300V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SF47G B0G
Taiwan Semiconductor Corporation

SF47G B0G

Sehemu ya hisa.: 77

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 500V, Sasa - Wastani Waliyorekebishwa (Io): 4A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 4A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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MUR4L40 B0G
Taiwan Semiconductor Corporation

MUR4L40 B0G

Sehemu ya hisa.: 174

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 4A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.28V @ 4A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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SRA20100HC0G
Taiwan Semiconductor Corporation

SRA20100HC0G

Sehemu ya hisa.: 88

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 20A, Voltage - Sambaza (Vf) (Max) @ Kama: 920mV @ 20A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SF16GHA0G
Taiwan Semiconductor Corporation

SF16GHA0G

Sehemu ya hisa.: 99

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SF34GHB0G
Taiwan Semiconductor Corporation

SF34GHB0G

Sehemu ya hisa.: 99

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SRAS8150HMNG
Taiwan Semiconductor Corporation

SRAS8150HMNG

Sehemu ya hisa.: 92

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SFA1002G C0G
Taiwan Semiconductor Corporation

SFA1002G C0G

Sehemu ya hisa.: 149

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 10A, Voltage - Sambaza (Vf) (Max) @ Kama: 975mV @ 10A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SRT19 R0G
Taiwan Semiconductor Corporation

SRT19 R0G

Sehemu ya hisa.: 146

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 90V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 800mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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GPAS1005 MNG
Taiwan Semiconductor Corporation

GPAS1005 MNG

Sehemu ya hisa.: 136

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 10A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 10A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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SFT13G A0G
Taiwan Semiconductor Corporation

SFT13G A0G

Sehemu ya hisa.: 146

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SR006HB0G
Taiwan Semiconductor Corporation

SR006HB0G

Sehemu ya hisa.: 151

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 500mA, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 500mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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HT16G A1G
Taiwan Semiconductor Corporation

HT16G A1G

Sehemu ya hisa.: 103

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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SF805G C0G
Taiwan Semiconductor Corporation

SF805G C0G

Sehemu ya hisa.: 176

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 300V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SF32GHB0G
Taiwan Semiconductor Corporation

SF32GHB0G

Sehemu ya hisa.: 158

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SR802HA0G
Taiwan Semiconductor Corporation

SR802HA0G

Sehemu ya hisa.: 83

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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HER306G B0G
Taiwan Semiconductor Corporation

HER306G B0G

Sehemu ya hisa.: 109

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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HER601G A0G
Taiwan Semiconductor Corporation

HER601G A0G

Sehemu ya hisa.: 82

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 6A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 6A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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SF61G B0G
Taiwan Semiconductor Corporation

SF61G B0G

Sehemu ya hisa.: 104

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 6A, Voltage - Sambaza (Vf) (Max) @ Kama: 975mV @ 6A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SF35G A0G
Taiwan Semiconductor Corporation

SF35G A0G

Sehemu ya hisa.: 91

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 300V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SR004HB0G
Taiwan Semiconductor Corporation

SR004HB0G

Sehemu ya hisa.: 169

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 500mA, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 500mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SR005HB0G
Taiwan Semiconductor Corporation

SR005HB0G

Sehemu ya hisa.: 100

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 500mA, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 500mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SF68GHB0G
Taiwan Semiconductor Corporation

SF68GHB0G

Sehemu ya hisa.: 174

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 6A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 6A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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HT12G R0G
Taiwan Semiconductor Corporation

HT12G R0G

Sehemu ya hisa.: 156

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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HER105G B0G
Taiwan Semiconductor Corporation

HER105G B0G

Sehemu ya hisa.: 151

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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UF1A R1G
Taiwan Semiconductor Corporation

UF1A R1G

Sehemu ya hisa.: 105

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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SF48GHB0G
Taiwan Semiconductor Corporation

SF48GHB0G

Sehemu ya hisa.: 113

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 4A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 4A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SR109HB0G
Taiwan Semiconductor Corporation

SR109HB0G

Sehemu ya hisa.: 110

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 90V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SR810 B0G
Taiwan Semiconductor Corporation

SR810 B0G

Sehemu ya hisa.: 117

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 920mV @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SR1502 B0G
Taiwan Semiconductor Corporation

SR1502 B0G

Sehemu ya hisa.: 162

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 15A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 15A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SFA1008G C0G
Taiwan Semiconductor Corporation

SFA1008G C0G

Sehemu ya hisa.: 139

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 10A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 10A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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MBR7100 C0G
Taiwan Semiconductor Corporation

MBR7100 C0G

Sehemu ya hisa.: 89

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 7.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 920mV @ 7.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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MBR745 C0G
Taiwan Semiconductor Corporation

MBR745 C0G

Sehemu ya hisa.: 106

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 45V, Sasa - Wastani Waliyorekebishwa (Io): 7.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 840mV @ 15A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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