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Diode - Warekebishaji - Moja

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  • Diode - Warekebishaji - Moja
SFA808GHC0G
Taiwan Semiconductor Corporation

SFA808GHC0G

Sehemu ya hisa.: 167

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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UF1J R1G
Taiwan Semiconductor Corporation

UF1J R1G

Sehemu ya hisa.: 166

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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SRAF1660 C0G
Taiwan Semiconductor Corporation

SRAF1660 C0G

Sehemu ya hisa.: 135

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 16A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 16A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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HER108G B0G
Taiwan Semiconductor Corporation

HER108G B0G

Sehemu ya hisa.: 151

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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SFT11G A0G
Taiwan Semiconductor Corporation

SFT11G A0G

Sehemu ya hisa.: 165

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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UF4004HB0G
Taiwan Semiconductor Corporation

UF4004HB0G

Sehemu ya hisa.: 113

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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SR315 B0G
Taiwan Semiconductor Corporation

SR315 B0G

Sehemu ya hisa.: 122

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SF803GHC0G
Taiwan Semiconductor Corporation

SF803GHC0G

Sehemu ya hisa.: 157

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 975mV @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SRA1650HC0G
Taiwan Semiconductor Corporation

SRA1650HC0G

Sehemu ya hisa.: 154

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 16A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 16A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SRA1020 C0G
Taiwan Semiconductor Corporation

SRA1020 C0G

Sehemu ya hisa.: 159

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 10A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 10A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SR502 A0G
Taiwan Semiconductor Corporation

SR502 A0G

Sehemu ya hisa.: 167

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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F1T5G R0G
Taiwan Semiconductor Corporation

F1T5G R0G

Sehemu ya hisa.: 152

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 250ns,

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SR1204 B0G
Taiwan Semiconductor Corporation

SR1204 B0G

Sehemu ya hisa.: 118

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 12A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 12A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SFT12GHA1G
Taiwan Semiconductor Corporation

SFT12GHA1G

Sehemu ya hisa.: 123

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SFA803GHC0G
Taiwan Semiconductor Corporation

SFA803GHC0G

Sehemu ya hisa.: 140

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 975mV @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SR1503 R0G
Taiwan Semiconductor Corporation

SR1503 R0G

Sehemu ya hisa.: 173

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 15A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 15A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SFT16GHA1G
Taiwan Semiconductor Corporation

SFT16GHA1G

Sehemu ya hisa.: 149

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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UF1JHA0G
Taiwan Semiconductor Corporation

UF1JHA0G

Sehemu ya hisa.: 157

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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SRT16 R0G
Taiwan Semiconductor Corporation

SRT16 R0G

Sehemu ya hisa.: 107

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SR504 B0G
Taiwan Semiconductor Corporation

SR504 B0G

Sehemu ya hisa.: 137

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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MBR750 C0G
Taiwan Semiconductor Corporation

MBR750 C0G

Sehemu ya hisa.: 136

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 7.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 750mV @ 7.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SF31G B0G
Taiwan Semiconductor Corporation

SF31G B0G

Sehemu ya hisa.: 155

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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HER605G R0G
Taiwan Semiconductor Corporation

HER605G R0G

Sehemu ya hisa.: 150

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 6A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 6A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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SR309HA0G
Taiwan Semiconductor Corporation

SR309HA0G

Sehemu ya hisa.: 115

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 90V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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HER308G B0G
Taiwan Semiconductor Corporation

HER308G B0G

Sehemu ya hisa.: 138

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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ESJLWHRQG
Taiwan Semiconductor Corporation

ESJLWHRQG

Sehemu ya hisa.: 159

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 800mA, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 800mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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MBR7150HC0G
Taiwan Semiconductor Corporation

MBR7150HC0G

Sehemu ya hisa.: 101

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 7.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 7.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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F1T7GHA1G
Taiwan Semiconductor Corporation

F1T7GHA1G

Sehemu ya hisa.: 140

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 500ns,

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SF38GHA0G
Taiwan Semiconductor Corporation

SF38GHA0G

Sehemu ya hisa.: 170

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SRAF5150 C0G
Taiwan Semiconductor Corporation

SRAF5150 C0G

Sehemu ya hisa.: 102

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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F1T7G R0G
Taiwan Semiconductor Corporation

F1T7G R0G

Sehemu ya hisa.: 86

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 500ns,

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UF4006HB0G
Taiwan Semiconductor Corporation

UF4006HB0G

Sehemu ya hisa.: 89

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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SK12H45 B0G
Taiwan Semiconductor Corporation

SK12H45 B0G

Sehemu ya hisa.: 143

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 45V, Sasa - Wastani Waliyorekebishwa (Io): 12A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 12A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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MUR160AHA0G
Taiwan Semiconductor Corporation

MUR160AHA0G

Sehemu ya hisa.: 173

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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UF4002 B0G
Taiwan Semiconductor Corporation

UF4002 B0G

Sehemu ya hisa.: 90

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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UF4005HB0G
Taiwan Semiconductor Corporation

UF4005HB0G

Sehemu ya hisa.: 92

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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