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Diode - Warekebishaji - Moja

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  • Diode - Warekebishaji - Moja
HER307G B0G
Taiwan Semiconductor Corporation

HER307G B0G

Sehemu ya hisa.: 127

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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SR115HR1G
Taiwan Semiconductor Corporation

SR115HR1G

Sehemu ya hisa.: 91

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SFT14GHA0G
Taiwan Semiconductor Corporation

SFT14GHA0G

Sehemu ya hisa.: 118

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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F1T6GHR0G
Taiwan Semiconductor Corporation

F1T6GHR0G

Sehemu ya hisa.: 120

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 500ns,

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SR306HA0G
Taiwan Semiconductor Corporation

SR306HA0G

Sehemu ya hisa.: 139

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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MBRS16150HMNG
Taiwan Semiconductor Corporation

MBRS16150HMNG

Sehemu ya hisa.: 162

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 16A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 16A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SFA807G C0G
Taiwan Semiconductor Corporation

SFA807G C0G

Sehemu ya hisa.: 138

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 500V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SFA803G C0G
Taiwan Semiconductor Corporation

SFA803G C0G

Sehemu ya hisa.: 148

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 975mV @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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GPA806 C0G
Taiwan Semiconductor Corporation

GPA806 C0G

Sehemu ya hisa.: 85

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 8A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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SFT16GHA0G
Taiwan Semiconductor Corporation

SFT16GHA0G

Sehemu ya hisa.: 103

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SR003 B0G
Taiwan Semiconductor Corporation

SR003 B0G

Sehemu ya hisa.: 175

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 500mA, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 500mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SF43G B0G
Taiwan Semiconductor Corporation

SF43G B0G

Sehemu ya hisa.: 140

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 4A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 4A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SFA806GHC0G
Taiwan Semiconductor Corporation

SFA806GHC0G

Sehemu ya hisa.: 100

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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F1T3G R0G
Taiwan Semiconductor Corporation

F1T3G R0G

Sehemu ya hisa.: 99

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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SRAF1630 C0G
Taiwan Semiconductor Corporation

SRAF1630 C0G

Sehemu ya hisa.: 147

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 16A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 16A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SRT12HA0G
Taiwan Semiconductor Corporation

SRT12HA0G

Sehemu ya hisa.: 105

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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MUR160HA0G
Taiwan Semiconductor Corporation

MUR160HA0G

Sehemu ya hisa.: 153

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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SR006 B0G
Taiwan Semiconductor Corporation

SR006 B0G

Sehemu ya hisa.: 92

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 500mA, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 500mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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FR101G R1G
Taiwan Semiconductor Corporation

FR101G R1G

Sehemu ya hisa.: 159

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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SF22G A0G
Taiwan Semiconductor Corporation

SF22G A0G

Sehemu ya hisa.: 86

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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MUR160HB0G
Taiwan Semiconductor Corporation

MUR160HB0G

Sehemu ya hisa.: 100

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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SF13G B0G
Taiwan Semiconductor Corporation

SF13G B0G

Sehemu ya hisa.: 157

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SF17GHA0G
Taiwan Semiconductor Corporation

SF17GHA0G

Sehemu ya hisa.: 167

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 500V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SRA1050HC0G
Taiwan Semiconductor Corporation

SRA1050HC0G

Sehemu ya hisa.: 86

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 10A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 10A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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UF1GHR1G
Taiwan Semiconductor Corporation

UF1GHR1G

Sehemu ya hisa.: 86

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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SR002HA0G
Taiwan Semiconductor Corporation

SR002HA0G

Sehemu ya hisa.: 97

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 500mA, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 500mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SR804HA0G
Taiwan Semiconductor Corporation

SR804HA0G

Sehemu ya hisa.: 101

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SRT16HA1G
Taiwan Semiconductor Corporation

SRT16HA1G

Sehemu ya hisa.: 87

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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MUR4L60HB0G
Taiwan Semiconductor Corporation

MUR4L60HB0G

Sehemu ya hisa.: 170

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 4A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.28V @ 4A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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F1T1G A0G
Taiwan Semiconductor Corporation

F1T1G A0G

Sehemu ya hisa.: 122

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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HT13G R0G
Taiwan Semiconductor Corporation

HT13G R0G

Sehemu ya hisa.: 84

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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MUR4L40HB0G
Taiwan Semiconductor Corporation

MUR4L40HB0G

Sehemu ya hisa.: 150

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 4A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.28V @ 4A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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SF13G A0G
Taiwan Semiconductor Corporation

SF13G A0G

Sehemu ya hisa.: 150

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SF13GHA0G
Taiwan Semiconductor Corporation

SF13GHA0G

Sehemu ya hisa.: 118

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SRAF5150HC0G
Taiwan Semiconductor Corporation

SRAF5150HC0G

Sehemu ya hisa.: 124

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SR104HB0G
Taiwan Semiconductor Corporation

SR104HB0G

Sehemu ya hisa.: 133

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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