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Diode - Warekebishaji - Moja

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  • Diode - Warekebishaji - Moja
SF68GHR0G
Taiwan Semiconductor Corporation

SF68GHR0G

Sehemu ya hisa.: 116

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 6A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 6A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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TSS43U RGG
Taiwan Semiconductor Corporation

TSS43U RGG

Sehemu ya hisa.: 172

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 200mA, Voltage - Sambaza (Vf) (Max) @ Kama: 450mV @ 15mA, Kasi: Small Signal =< 200mA (Io), Any Speed, Rudisha Saa ya Kuokoa (trr): 5ns,

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TSS54U RGG
Taiwan Semiconductor Corporation

TSS54U RGG

Sehemu ya hisa.: 145

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 200mA, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 100mA, Kasi: Small Signal =< 200mA (Io), Any Speed, Rudisha Saa ya Kuokoa (trr): 5ns,

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S15JC M6G
Taiwan Semiconductor Corporation

S15JC M6G

Sehemu ya hisa.: 165

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 15A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 15A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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TSN520M60 S4G
Taiwan Semiconductor Corporation

TSN520M60 S4G

Sehemu ya hisa.: 204

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 20A, Voltage - Sambaza (Vf) (Max) @ Kama: 580mV @ 20A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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TSP15H200S S1G
Taiwan Semiconductor Corporation

TSP15H200S S1G

Sehemu ya hisa.: 159

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 15A, Voltage - Sambaza (Vf) (Max) @ Kama: 890mV @ 15A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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ES1LGHM2G
Taiwan Semiconductor Corporation

ES1LGHM2G

Sehemu ya hisa.: 181

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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TSN525M60 S4G
Taiwan Semiconductor Corporation

TSN525M60 S4G

Sehemu ya hisa.: 146

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 25A, Voltage - Sambaza (Vf) (Max) @ Kama: 630mV @ 25A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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TSS0230U RGG
Taiwan Semiconductor Corporation

TSS0230U RGG

Sehemu ya hisa.: 162

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 35V, Sasa - Wastani Waliyorekebishwa (Io): 200mA, Voltage - Sambaza (Vf) (Max) @ Kama: 600mV @ 200mA, Kasi: Small Signal =< 200mA (Io), Any Speed,

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S15KC M6G
Taiwan Semiconductor Corporation

S15KC M6G

Sehemu ya hisa.: 221

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 15A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 15A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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S15GC M6G
Taiwan Semiconductor Corporation

S15GC M6G

Sehemu ya hisa.: 158

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 15A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 15A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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TSS40U RGG
Taiwan Semiconductor Corporation

TSS40U RGG

Sehemu ya hisa.: 193

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 200mA, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 40mA, Kasi: Small Signal =< 200mA (Io), Any Speed, Rudisha Saa ya Kuokoa (trr): 5ns,

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S15MC M6G
Taiwan Semiconductor Corporation

S15MC M6G

Sehemu ya hisa.: 137

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 15A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 15A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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TSSW3U45 RVG
Taiwan Semiconductor Corporation

TSSW3U45 RVG

Sehemu ya hisa.: 218

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 45V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 470mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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TSSA3U60 M2G
Taiwan Semiconductor Corporation

TSSA3U60 M2G

Sehemu ya hisa.: 146

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 540mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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ES3JB M4G
Taiwan Semiconductor Corporation

ES3JB M4G

Sehemu ya hisa.: 154

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.45V @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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TSSE3U60 RVG
Taiwan Semiconductor Corporation

TSSE3U60 RVG

Sehemu ya hisa.: 168

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 580mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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TSSW3U45HRVG
Taiwan Semiconductor Corporation

TSSW3U45HRVG

Sehemu ya hisa.: 140

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 45V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 470mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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MUR315S V7G
Taiwan Semiconductor Corporation

MUR315S V7G

Sehemu ya hisa.: 116

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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TSS83L45 MXG
Taiwan Semiconductor Corporation

TSS83L45 MXG

Sehemu ya hisa.: 201

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 45V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 560mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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ES1LG M2G
Taiwan Semiconductor Corporation

ES1LG M2G

Sehemu ya hisa.: 170

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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TSN520M60 S3G
Taiwan Semiconductor Corporation

TSN520M60 S3G

Sehemu ya hisa.: 161

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 20A, Voltage - Sambaza (Vf) (Max) @ Kama: 580mV @ 20A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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ES1LJ M2G
Taiwan Semiconductor Corporation

ES1LJ M2G

Sehemu ya hisa.: 174

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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TSS0340U RGG
Taiwan Semiconductor Corporation

TSS0340U RGG

Sehemu ya hisa.: 173

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 45V, Sasa - Wastani Waliyorekebishwa (Io): 30mA, Voltage - Sambaza (Vf) (Max) @ Kama: 370mV @ 1mA, Kasi: Small Signal =< 200mA (Io), Any Speed,

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TSS0230LU RGG
Taiwan Semiconductor Corporation

TSS0230LU RGG

Sehemu ya hisa.: 167

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 35V, Sasa - Wastani Waliyorekebishwa (Io): 200mA, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 200mA, Kasi: Small Signal =< 200mA (Io), Any Speed,

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UGF5JHC0G
Taiwan Semiconductor Corporation

UGF5JHC0G

Sehemu ya hisa.: 127

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 3V @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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UGF8JDHC0G
Taiwan Semiconductor Corporation

UGF8JDHC0G

Sehemu ya hisa.: 196

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 2.3V @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 30ns,

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TSP15U120S S1G
Taiwan Semiconductor Corporation

TSP15U120S S1G

Sehemu ya hisa.: 122

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 120V, Sasa - Wastani Waliyorekebishwa (Io): 15A, Voltage - Sambaza (Vf) (Max) @ Kama: 750mV @ 15A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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ES1LG R3G
Taiwan Semiconductor Corporation

ES1LG R3G

Sehemu ya hisa.: 185

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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TSSA3U45 M2G
Taiwan Semiconductor Corporation

TSSA3U45 M2G

Sehemu ya hisa.: 164

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 45V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 480mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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ES1LJ R3G
Taiwan Semiconductor Corporation

ES1LJ R3G

Sehemu ya hisa.: 195

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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ES1LJHM2G
Taiwan Semiconductor Corporation

ES1LJHM2G

Sehemu ya hisa.: 136

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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UGF12J C0G
Taiwan Semiconductor Corporation

UGF12J C0G

Sehemu ya hisa.: 166

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 12A, Voltage - Sambaza (Vf) (Max) @ Kama: 2V @ 12A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 20ns,

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RSFALHMTG
Taiwan Semiconductor Corporation

RSFALHMTG

Sehemu ya hisa.: 184

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 500mA, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 500mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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SS210L MQG
Taiwan Semiconductor Corporation

SS210L MQG

Sehemu ya hisa.: 209

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SS22LHMHG
Taiwan Semiconductor Corporation

SS22LHMHG

Sehemu ya hisa.: 154

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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