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Diode - Warekebishaji - Moja

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  • Diode - Warekebishaji - Moja
ES1CL RHG
Taiwan Semiconductor Corporation

ES1CL RHG

Sehemu ya hisa.: 179

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SS24L M2G
Taiwan Semiconductor Corporation

SS24L M2G

Sehemu ya hisa.: 159

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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S1KLHRUG
Taiwan Semiconductor Corporation

S1KLHRUG

Sehemu ya hisa.: 202

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.8µs,

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RSFBL M2G
Taiwan Semiconductor Corporation

RSFBL M2G

Sehemu ya hisa.: 225

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 500mA, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 500mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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S1BLHMQG
Taiwan Semiconductor Corporation

S1BLHMQG

Sehemu ya hisa.: 156

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.8µs,

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ES1GL RTG
Taiwan Semiconductor Corporation

ES1GL RTG

Sehemu ya hisa.: 135

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SS19LHRVG
Taiwan Semiconductor Corporation

SS19LHRVG

Sehemu ya hisa.: 144

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 90V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 800mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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ES1HL RHG
Taiwan Semiconductor Corporation

ES1HL RHG

Sehemu ya hisa.: 219

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 500V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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S1ALHM2G
Taiwan Semiconductor Corporation

S1ALHM2G

Sehemu ya hisa.: 208

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.8µs,

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RS1ML MTG
Taiwan Semiconductor Corporation

RS1ML MTG

Sehemu ya hisa.: 168

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 800mA, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 800mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 500ns,

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ES1GLHMQG
Taiwan Semiconductor Corporation

ES1GLHMQG

Sehemu ya hisa.: 139

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SS36LHRTG
Taiwan Semiconductor Corporation

SS36LHRTG

Sehemu ya hisa.: 178

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 750mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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RSFJL MTG
Taiwan Semiconductor Corporation

RSFJL MTG

Sehemu ya hisa.: 193

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 500mA, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 500mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 250ns,

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SS310LHRUG
Taiwan Semiconductor Corporation

SS310LHRUG

Sehemu ya hisa.: 144

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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ES1JLHRTG
Taiwan Semiconductor Corporation

ES1JLHRTG

Sehemu ya hisa.: 204

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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S1JLHMTG
Taiwan Semiconductor Corporation

S1JLHMTG

Sehemu ya hisa.: 142

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.8µs,

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SS210L RHG
Taiwan Semiconductor Corporation

SS210L RHG

Sehemu ya hisa.: 187

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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S1GLHRFG
Taiwan Semiconductor Corporation

S1GLHRFG

Sehemu ya hisa.: 184

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.8µs,

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ES1CL MHG
Taiwan Semiconductor Corporation

ES1CL MHG

Sehemu ya hisa.: 200

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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HS1BL RUG
Taiwan Semiconductor Corporation

HS1BL RUG

Sehemu ya hisa.: 217

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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RS1BL MHG
Taiwan Semiconductor Corporation

RS1BL MHG

Sehemu ya hisa.: 201

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 800mA, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 800mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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S1DL MTG
Taiwan Semiconductor Corporation

S1DL MTG

Sehemu ya hisa.: 226

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.8µs,

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SS210L MTG
Taiwan Semiconductor Corporation

SS210L MTG

Sehemu ya hisa.: 136

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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HS1KL RHG
Taiwan Semiconductor Corporation

HS1KL RHG

Sehemu ya hisa.: 158

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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SK84CHR7G
Taiwan Semiconductor Corporation

SK84CHR7G

Sehemu ya hisa.: 189

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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S1AL MQG
Taiwan Semiconductor Corporation

S1AL MQG

Sehemu ya hisa.: 206

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.8µs,

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SS23LHM2G
Taiwan Semiconductor Corporation

SS23LHM2G

Sehemu ya hisa.: 220

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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RSFGL MHG
Taiwan Semiconductor Corporation

RSFGL MHG

Sehemu ya hisa.: 169

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 500mA, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 500mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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ES1GLHRTG
Taiwan Semiconductor Corporation

ES1GLHRTG

Sehemu ya hisa.: 212

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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HS1DL RFG
Taiwan Semiconductor Corporation

HS1DL RFG

Sehemu ya hisa.: 160

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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SS12LHM2G
Taiwan Semiconductor Corporation

SS12LHM2G

Sehemu ya hisa.: 158

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 450mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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RS1JL MTG
Taiwan Semiconductor Corporation

RS1JL MTG

Sehemu ya hisa.: 218

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 800mA, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 800mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 250ns,

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ES1CL RTG
Taiwan Semiconductor Corporation

ES1CL RTG

Sehemu ya hisa.: 182

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SS36L RFG
Taiwan Semiconductor Corporation

SS36L RFG

Sehemu ya hisa.: 226

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 750mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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HS1DL M2G
Taiwan Semiconductor Corporation

HS1DL M2G

Sehemu ya hisa.: 169

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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SS25LHRTG
Taiwan Semiconductor Corporation

SS25LHRTG

Sehemu ya hisa.: 194

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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