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Transistors - FETs, MOSFETs - Moja

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  • Transistors - FETs, MOSFETs - Moja
TK31V60W,LVQ
Toshiba Semiconductor and Storage

TK31V60W,LVQ

Sehemu ya hisa.: 15568

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 98 mOhm @ 15.4A, 10V,

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TPW4R50ANH,L1Q
Toshiba Semiconductor and Storage

TPW4R50ANH,L1Q

Sehemu ya hisa.: 93811

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 92A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 46A, 10V,

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SSM6J215FE(TE85L,F
Toshiba Semiconductor and Storage

SSM6J215FE(TE85L,F

Sehemu ya hisa.: 179583

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 59 mOhm @ 3A, 4.5V,

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SSM3K123TU,LF
Toshiba Semiconductor and Storage

SSM3K123TU,LF

Sehemu ya hisa.: 154973

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4V, Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4V,

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TK35N65W5,S1F
Toshiba Semiconductor and Storage

TK35N65W5,S1F

Sehemu ya hisa.: 8137

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 35A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 95 mOhm @ 17.5A, 10V,

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TK31N60W5,S1VF
Toshiba Semiconductor and Storage

TK31N60W5,S1VF

Sehemu ya hisa.: 10406

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 99 mOhm @ 15.4A, 10V,

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TK35A65W,S5X
Toshiba Semiconductor and Storage

TK35A65W,S5X

Sehemu ya hisa.: 10249

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 35A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 80 mOhm @ 17.5A, 10V,

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SSM3K72CTC,L3F
Toshiba Semiconductor and Storage

SSM3K72CTC,L3F

Sehemu ya hisa.: 165309

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 150mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V,

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TK31E60X,S1X
Toshiba Semiconductor and Storage

TK31E60X,S1X

Sehemu ya hisa.: 12874

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 88 mOhm @ 9.4A, 10V,

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TPW1R306PL,L1Q
Toshiba Semiconductor and Storage

TPW1R306PL,L1Q

Sehemu ya hisa.: 52018

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 260A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.29 mOhm @ 50A, 10V,

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SSM3J120TU,LF
Toshiba Semiconductor and Storage

SSM3J120TU,LF

Sehemu ya hisa.: 181550

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4V, Rds On (Max) @ Id, Vgs: 38 mOhm @ 3A, 4V,

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TK31E60W,S1VX
Toshiba Semiconductor and Storage

TK31E60W,S1VX

Sehemu ya hisa.: 10871

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 88 mOhm @ 15.4A, 10V,

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SSM3J351R,LF
Toshiba Semiconductor and Storage

SSM3J351R,LF

Sehemu ya hisa.: 125673

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 134 mOhm @ 1A, 10V,

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TPCA8026(TE12L,Q,M
Toshiba Semiconductor and Storage

TPCA8026(TE12L,Q,M

Sehemu ya hisa.: 77538

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 45A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 23A, 10V,

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SSM3K7002CFU,LF
Toshiba Semiconductor and Storage

SSM3K7002CFU,LF

Sehemu ya hisa.: 113529

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 170mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V,

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TPH5900CNH,L1Q
Toshiba Semiconductor and Storage

TPH5900CNH,L1Q

Sehemu ya hisa.: 139118

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 59 mOhm @ 4.5A, 10V,

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TK39N60W5,S1VF
Toshiba Semiconductor and Storage

TK39N60W5,S1VF

Sehemu ya hisa.: 10492

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 38.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 74 mOhm @ 19.4A, 10V,

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SSM3J334R,LF
Toshiba Semiconductor and Storage

SSM3J334R,LF

Sehemu ya hisa.: 114000

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 71 mOhm @ 3A, 10V,

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SSM3K333R,LF
Toshiba Semiconductor and Storage

SSM3K333R,LF

Sehemu ya hisa.: 181888

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 10V,

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SSM3K37FS,LF
Toshiba Semiconductor and Storage

SSM3K37FS,LF

Sehemu ya hisa.: 164622

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V,

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SSM6K781G,LF
Toshiba Semiconductor and Storage

SSM6K781G,LF

Sehemu ya hisa.: 168957

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 18 mOhm @ 1.5A, 4.5V,

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SSM3K72KCT,L3F
Toshiba Semiconductor and Storage

SSM3K72KCT,L3F

Sehemu ya hisa.: 168170

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 400mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V,

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SSM3J130TU,LF
Toshiba Semiconductor and Storage

SSM3J130TU,LF

Sehemu ya hisa.: 194401

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 25.8 mOhm @ 4A, 4.5V,

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SSM3K16CT,L3F
Toshiba Semiconductor and Storage

SSM3K16CT,L3F

Sehemu ya hisa.: 21564

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V,

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TK16A60W,S4X
Toshiba Semiconductor and Storage

TK16A60W,S4X

Sehemu ya hisa.: 29509

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V,

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TK9J90E,S1E
Toshiba Semiconductor and Storage

TK9J90E,S1E

Sehemu ya hisa.: 20952

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 4.5A, 10V,

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TK14C65W5,S1Q
Toshiba Semiconductor and Storage

TK14C65W5,S1Q

Sehemu ya hisa.: 26069

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13.7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V,

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TK13A50DA(STA4,Q,M
Toshiba Semiconductor and Storage

TK13A50DA(STA4,Q,M

Sehemu ya hisa.: 30522

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 470 mOhm @ 6.3A, 10V,

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SSM3J132TU,LF
Toshiba Semiconductor and Storage

SSM3J132TU,LF

Sehemu ya hisa.: 103604

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.2V, 4.5V, Rds On (Max) @ Id, Vgs: 17 mOhm @ 5A, 4.5V,

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TK12A60W,S4VX
Toshiba Semiconductor and Storage

TK12A60W,S4VX

Sehemu ya hisa.: 20769

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.8A, 10V,

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TK15A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK15A60D(STA4,Q,M)

Sehemu ya hisa.: 24154

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 370 mOhm @ 7.5A, 10V,

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TK9A65W,S5X
Toshiba Semiconductor and Storage

TK9A65W,S5X

Sehemu ya hisa.: 30056

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 500 mOhm @ 4.6A, 10V,

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TK11A55D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK11A55D(STA4,Q,M)

Sehemu ya hisa.: 31876

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 550V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 630 mOhm @ 5.5A, 10V,

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TK20V60W,LVQ
Toshiba Semiconductor and Storage

TK20V60W,LVQ

Sehemu ya hisa.: 26594

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 170 mOhm @ 10A, 10V,

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T2N7002AK,LM
Toshiba Semiconductor and Storage

T2N7002AK,LM

Sehemu ya hisa.: 154374

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V,

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TK14A55D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK14A55D(STA4,Q,M)

Sehemu ya hisa.: 26114

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 550V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 370 mOhm @ 7A, 10V,

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