Transistors - FETs, MOSFETs - Moja | Bidhaa tofauti za semiconductor | 21

TK5A50D(STA4,Q,M)

Sehemu ya hisa.: 65885

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V,

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Toshiba Semiconductor and Storage

TK7A45DA(STA4,Q,M)

Sehemu ya hisa.: 58903

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 450V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.3A, 10V,

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Toshiba Semiconductor and Storage

TK3A65D(STA4,Q,M)

Sehemu ya hisa.: 51138

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.25 Ohm @ 1.5A, 10V,

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Toshiba Semiconductor and Storage

TK56E12N1,S1X

Sehemu ya hisa.: 48213

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 120V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 56A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 7 mOhm @ 28A, 10V,

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Toshiba Semiconductor and Storage

TK9A55DA(STA4,Q,M)

Sehemu ya hisa.: 40874

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 550V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 860 mOhm @ 4.3A, 10V,

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Toshiba Semiconductor and Storage

TK12A50D(STA4,Q,M)

Sehemu ya hisa.: 62027

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V,

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Toshiba Semiconductor and Storage

TPH12008NH,L1Q

Sehemu ya hisa.: 131771

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 24A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 12A, 10V,

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Toshiba Semiconductor and Storage

TPH3300CNH,L1Q

Sehemu ya hisa.: 107266

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 33 mOhm @ 9A, 10V,

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Toshiba Semiconductor and Storage

TPCA8065-H,LQ(S

Sehemu ya hisa.: 84593

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8A, 10V,

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Toshiba Semiconductor and Storage

TPH2R608NH,L1Q

Sehemu ya hisa.: 104364

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 150A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 50A, 10V,

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Toshiba Semiconductor and Storage

TK7P60W,RVQ

Sehemu ya hisa.: 79106

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V,

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Toshiba Semiconductor and Storage

TK7P50D(T6RSS-Q)

Sehemu ya hisa.: 115424

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.22 Ohm @ 3.5A, 10V,

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Toshiba Semiconductor and Storage

TK8S06K3L(T6L1,NQ)

Sehemu ya hisa.: 144101

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 54 mOhm @ 4A, 10V,

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Toshiba Semiconductor and Storage

TK6R7P06PL,RQ

Sehemu ya hisa.: 7525

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 46A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 23A, 10V,

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Toshiba Semiconductor and Storage

TK35S04K3L(T6L1,NQ

Sehemu ya hisa.: 128583

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 35A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 10.3 mOhm @ 17.5A, 10V,

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Toshiba Semiconductor and Storage

TK6P60W,RVQ

Sehemu ya hisa.: 83639

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 820 mOhm @ 3.1A, 10V,

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Toshiba Semiconductor and Storage

TPH1400ANH,L1Q

Sehemu ya hisa.: 128427

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 24A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 12A, 10V,

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Toshiba Semiconductor and Storage

TPN5900CNH,L1Q

Sehemu ya hisa.: 142607

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 59 mOhm @ 4.5A, 10V,

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Toshiba Semiconductor and Storage

TK3P50D,RQ(S

Sehemu ya hisa.: 140757

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V,

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Toshiba Semiconductor and Storage

TPCA8128,LQ(CM

Sehemu ya hisa.: 116013

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 34A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 17A, 10V,

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Toshiba Semiconductor and Storage

TK380P60Y,RQ

Sehemu ya hisa.: 135929

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.7A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V,

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Toshiba Semiconductor and Storage

TK11P65W,RQ

Sehemu ya hisa.: 83901

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11.1A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 440 mOhm @ 5.5A, 10V,

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Toshiba Semiconductor and Storage

TK65S04K3L(T6L1,NQ

Sehemu ya hisa.: 94901

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 65A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 32.5A, 10V,

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Toshiba Semiconductor and Storage

TJ50S06M3L(T6L1,NQ

Sehemu ya hisa.: 86589

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 25A, 10V,

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Toshiba Semiconductor and Storage

TPCA8062-H,LQ(CM

Sehemu ya hisa.: 79301

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 14A, 10V,

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Toshiba Semiconductor and Storage

TPN2R503NC,L1Q

Sehemu ya hisa.: 128407

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 40A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 10V,

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Toshiba Semiconductor and Storage

TK290P65Y,RQ

Sehemu ya hisa.: 105764

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 290 mOhm @ 5.8A, 10V,

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Toshiba Semiconductor and Storage

TK2Q60D(Q)

Sehemu ya hisa.: 103183

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1A, 10V,

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Toshiba Semiconductor and Storage

TK35E08N1,S1X

Sehemu ya hisa.: 78724

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 55A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 17.5A, 10V,

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Toshiba Semiconductor and Storage

TK5A45DA(STA4,Q,M)

Sehemu ya hisa.: 77487

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 450V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 2.3A, 10V,

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Toshiba Semiconductor and Storage

TK7P60W5,RVQ

Sehemu ya hisa.: 101696

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 670 mOhm @ 3.5A, 10V,

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Toshiba Semiconductor and Storage

SSM3J338R,LF

Sehemu ya hisa.: 103758

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 8V, Rds On (Max) @ Id, Vgs: 17.6 mOhm @ 6A, 8V,

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Toshiba Semiconductor and Storage

TPN2R203NC,L1Q

Sehemu ya hisa.: 157974

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 45A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 22.5A, 10V,

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Toshiba Semiconductor and Storage

TK60S06K3L(T6L1,NQ

Sehemu ya hisa.: 94851

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V,

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Toshiba Semiconductor and Storage

TPH1R403NL,L1Q

Sehemu ya hisa.: 123062

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 30A, 10V,

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Toshiba Semiconductor and Storage

TPC8062-H,LQ(CM

Sehemu ya hisa.: 84187

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 9A, 10V,

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