Transistors - Bipolar (BJT) - Safu, Kabla ya Upend | Bidhaa tofauti za semiconductor | 6

RN4910(T5L,F,T)

Sehemu ya hisa.: 1539

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN1506(TE85L,F)

Sehemu ya hisa.: 128569

Aina ya Transistor: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2903FE(TE85L,F)

Sehemu ya hisa.: 147906

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2511(TE85L,F)

Sehemu ya hisa.: 175959

Aina ya Transistor: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN4902,LF

Sehemu ya hisa.: 3229

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2962FE(TE85L,F)

Sehemu ya hisa.: 1530

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 1 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1971FE(TE85L,F)

Sehemu ya hisa.: 1504

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN2711(TE85L,F)

Sehemu ya hisa.: 1466

Aina ya Transistor: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN2969(TE85L,F)

Sehemu ya hisa.: 178670

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2902(T5L,F,T)

Sehemu ya hisa.: 3238

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2967(TE85L,F)

Sehemu ya hisa.: 142485

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1906FE,LF(CT

Sehemu ya hisa.: 162851

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN1510(TE85L,F)

Sehemu ya hisa.: 122352

Aina ya Transistor: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN2907(T5L,F,T)

Sehemu ya hisa.: 1469

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN2961FE(TE85L,F)

Sehemu ya hisa.: 1534

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN1906,LF

Sehemu ya hisa.: 1510

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN2711JE(TE85L,F)

Sehemu ya hisa.: 139401

Aina ya Transistor: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN1605TE85LF

Sehemu ya hisa.: 170733

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN1701JE(TE85L,F)

Sehemu ya hisa.: 13233

Aina ya Transistor: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN2601(TE85L,F)

Sehemu ya hisa.: 9992

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN2964FE(TE85L,F)

Sehemu ya hisa.: 1469

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN4911(T5L,F,T)

Sehemu ya hisa.: 1556

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN2904FE(T5L,F,T)

Sehemu ya hisa.: 1469

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN4901,LF

Sehemu ya hisa.: 1493

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN1611(TE85L,F)

Sehemu ya hisa.: 159685

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN1963(TE85L,F)

Sehemu ya hisa.: 101550

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN2902,LF

Sehemu ya hisa.: 1472

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN2911,LF

Sehemu ya hisa.: 148274

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN1969FE(TE85L,F)

Sehemu ya hisa.: 1468

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN4984(T5L,F,T)

Sehemu ya hisa.: 1414

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN2903,LF

Sehemu ya hisa.: 1496

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN4988(T5L,F,T)

Sehemu ya hisa.: 132419

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN2908FE(TE85L,F)

Sehemu ya hisa.: 111376

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN2709JE(TE85L,F)

Sehemu ya hisa.: 180658

Aina ya Transistor: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN2604(TE85L,F)

Sehemu ya hisa.: 165277

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.

Toshiba Semiconductor and Storage

RN1902FE,LF(CT

Sehemu ya hisa.: 121303

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 1 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Wishlist.