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Transistors - Bipolar (BJT) - Safu, Kabla ya Upend

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  • Transistors - Bipolar (BJT) - Safu, Kabla ya Upend
RN4901(T5L,F,T)
Toshiba Semiconductor and Storage

RN4901(T5L,F,T)

Sehemu ya hisa.: 1552

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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RN4902FE,LF(CT
Toshiba Semiconductor and Storage

RN4902FE,LF(CT

Sehemu ya hisa.: 196360

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN1965(TE85L,F)
Toshiba Semiconductor and Storage

RN1965(TE85L,F)

Sehemu ya hisa.: 9983

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1963FE(TE85L,F)
Toshiba Semiconductor and Storage

RN1963FE(TE85L,F)

Sehemu ya hisa.: 1435

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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RN1505(TE85L,F)
Toshiba Semiconductor and Storage

RN1505(TE85L,F)

Sehemu ya hisa.: 128512

Aina ya Transistor: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN2965FE(TE85L,F)
Toshiba Semiconductor and Storage

RN2965FE(TE85L,F)

Sehemu ya hisa.: 1529

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1509(TE85L,F)
Toshiba Semiconductor and Storage

RN1509(TE85L,F)

Sehemu ya hisa.: 191088

Aina ya Transistor: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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RN1973(TE85L,F)
Toshiba Semiconductor and Storage

RN1973(TE85L,F)

Sehemu ya hisa.: 116165

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN1702JE(TE85L,F)
Toshiba Semiconductor and Storage

RN1702JE(TE85L,F)

Sehemu ya hisa.: 122052

Aina ya Transistor: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN2911(T5L,F,T)
Toshiba Semiconductor and Storage

RN2911(T5L,F,T)

Sehemu ya hisa.: 1491

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN1908FE(TE85L,F)
Toshiba Semiconductor and Storage

RN1908FE(TE85L,F)

Sehemu ya hisa.: 139044

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN4902,LF(CT
Toshiba Semiconductor and Storage

RN4902,LF(CT

Sehemu ya hisa.: 115907

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN2906FE(TE85L,F)
Toshiba Semiconductor and Storage

RN2906FE(TE85L,F)

Sehemu ya hisa.: 1387

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1962FE(TE85L,F)
Toshiba Semiconductor and Storage

RN1962FE(TE85L,F)

Sehemu ya hisa.: 3220

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN1602(TE85L,F)
Toshiba Semiconductor and Storage

RN1602(TE85L,F)

Sehemu ya hisa.: 9979

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN1964FE(TE85L,F)
Toshiba Semiconductor and Storage

RN1964FE(TE85L,F)

Sehemu ya hisa.: 183026

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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