Diode - Warekebishaji - Moja | Bidhaa tofauti za semiconductor | 6

CMS17(TE12L,Q,M)

Sehemu ya hisa.: 117

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 480mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS30I40A(TE12L,QM

Sehemu ya hisa.: 100

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRF02(TE85L,Q,M)

Sehemu ya hisa.: 88

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 500mA, Voltage - Sambaza (Vf) (Max) @ Kama: 3V @ 500mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 100ns,

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Toshiba Semiconductor and Storage

CRS20I30A(TE85L,QM

Sehemu ya hisa.: 166057

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 490mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS12(TE85L,Q,M)

Sehemu ya hisa.: 177271

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 580mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS15I30B(TE85L,QM

Sehemu ya hisa.: 79

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 400mV @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS15(TE12L,Q,M)

Sehemu ya hisa.: 163

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 580mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMF01(TE12L,Q,M)

Sehemu ya hisa.: 194437

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 2V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 100ns,

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Toshiba Semiconductor and Storage

CRG04(TE85L,Q,M)

Sehemu ya hisa.: 185173

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRF03(TE85L,Q,M)

Sehemu ya hisa.: 157727

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 700mA, Voltage - Sambaza (Vf) (Max) @ Kama: 2V @ 700mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 100ns,

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Toshiba Semiconductor and Storage

CRH01(TE85R,Q,M)

Sehemu ya hisa.: 160805

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 980mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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Toshiba Semiconductor and Storage

CMS10I30A(TE12L,QM

Sehemu ya hisa.: 142

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 360mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS07(TE12L,Q,M)

Sehemu ya hisa.: 160837

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 450mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRG03(TE85L,Q,M)

Sehemu ya hisa.: 187277

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS10I40A(TE12L,QM

Sehemu ya hisa.: 192

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 450mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS03(TE85L,Q,M)

Sehemu ya hisa.: 104522

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 450mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS20I40A(TE12L,QM

Sehemu ya hisa.: 152

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 520mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CES520,L3F

Sehemu ya hisa.: 178640

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 200mA, Voltage - Sambaza (Vf) (Max) @ Kama: 600mV @ 200mA, Kasi: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

CES521,L3F

Sehemu ya hisa.: 160204

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 200mA, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 200mA, Kasi: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

TRS12E65C,S1Q

Sehemu ya hisa.: 5730

Aina ya Diode: Silicon Carbide Schottky, Voltage - Kubadilisha DC (Vr) (Max): 650V, Sasa - Wastani Waliyorekebishwa (Io): 12A (DC), Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 12A, Kasi: No Recovery Time > 500mA (Io), Rudisha Saa ya Kuokoa (trr): 0ns,

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Toshiba Semiconductor and Storage

CUS06(TE85L,Q,M)

Sehemu ya hisa.: 236

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 450mV @ 700mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS14(TE12L,Q,M)

Sehemu ya hisa.: 113027

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 580mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS10I30A(TE85L,QM

Sehemu ya hisa.: 200

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 390mV @ 700mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS16(TE12L,Q,M)

Sehemu ya hisa.: 182845

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMG02(TE12L,Q,M)

Sehemu ya hisa.: 177

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 2A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS15I30A(TE85L,QM

Sehemu ya hisa.: 158

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 460mV @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMH01(TE12L,Q,M)

Sehemu ya hisa.: 162

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 980mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 100ns,

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Toshiba Semiconductor and Storage

CUS03(TE85L,Q,M)

Sehemu ya hisa.: 175

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 700mA, Voltage - Sambaza (Vf) (Max) @ Kama: 520mV @ 700mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS05(TE85L,Q,M)

Sehemu ya hisa.: 154

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 370mV @ 700mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRH02(TE85L,Q,M)

Sehemu ya hisa.: 159

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 500mA, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 500mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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Toshiba Semiconductor and Storage

CMH04(TE12L,Q,M)

Sehemu ya hisa.: 168712

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 980mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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Toshiba Semiconductor and Storage

CMH08A(TE12L,Q,M)

Sehemu ya hisa.: 153282

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.8V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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Toshiba Semiconductor and Storage

CMC02(TE12L,Q,M)

Sehemu ya hisa.: 171

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS30I30A(TE12L,QM

Sehemu ya hisa.: 187

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 490mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMH02A(TE12L,Q,M)

Sehemu ya hisa.: 184

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.8V @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 100ns,

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Toshiba Semiconductor and Storage

CMG03(TE12L,Q,M)

Sehemu ya hisa.: 172

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 2A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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