Diode - Warekebishaji - Moja | Bidhaa tofauti za semiconductor | 6

CBS05F30(TPL3)

Sehemu ya hisa.: 1645

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 500mA, Voltage - Sambaza (Vf) (Max) @ Kama: 450mV @ 500mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

DSR01S30SC(TPL3)

Sehemu ya hisa.: 131336

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 100mA, Voltage - Sambaza (Vf) (Max) @ Kama: 620mV @ 100mA, Kasi: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

CLS01(TE16L,PAS,Q)

Sehemu ya hisa.: 1424

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 10A (DC), Voltage - Sambaza (Vf) (Max) @ Kama: 0.47V @ 10A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

DSF01S30SC(TPL3)

Sehemu ya hisa.: 1267

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 100mA, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 100mA, Kasi: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

CLS01(T6LSONY,Q)

Sehemu ya hisa.: 1440

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 10A (DC), Voltage - Sambaza (Vf) (Max) @ Kama: 0.47V @ 10A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLH05(T6L,NKOD,Q)

Sehemu ya hisa.: 1359

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 5A (DC), Voltage - Sambaza (Vf) (Max) @ Kama: 0.98V @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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Toshiba Semiconductor and Storage

CLH03(TE16R,Q)

Sehemu ya hisa.: 1368

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 3A (DC), Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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Toshiba Semiconductor and Storage

CMS03(TE12L)

Sehemu ya hisa.: 1091

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 450mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

DSF07S30U(TPH3,F)

Sehemu ya hisa.: 1170

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 700mA, Voltage - Sambaza (Vf) (Max) @ Kama: 450mV @ 700mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

DSF05S30U(TPH3,F)

Sehemu ya hisa.: 1121

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 500mA, Voltage - Sambaza (Vf) (Max) @ Kama: 450mV @ 500mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

U1GWJ49(TE12L,F)

Sehemu ya hisa.: 852

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS04(TE85L,Q,M)

Sehemu ya hisa.: 101221

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 510mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS02(TE85L,Q,M)

Sehemu ya hisa.: 779

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 470mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS06(TE85L,Q,M)

Sehemu ya hisa.: 186793

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 360mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUHS10F60,H3F

Sehemu ya hisa.: 9971

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS15S40,H3F

Sehemu ya hisa.: 186045

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 450mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS11(TE85L,Q,M)

Sehemu ya hisa.: 161979

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 360mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

TBAS16,LM

Sehemu ya hisa.: 122216

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 80V, Sasa - Wastani Waliyorekebishwa (Io): 215mA, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS551V30,H3F

Sehemu ya hisa.: 168808

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 500mA, Voltage - Sambaza (Vf) (Max) @ Kama: 470mV @ 500mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS01(TE85L,Q,M)

Sehemu ya hisa.: 784

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 390mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS15S30,H3F

Sehemu ya hisa.: 171031

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 400mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

TBAT54,LM

Sehemu ya hisa.: 142010

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 140mA, Voltage - Sambaza (Vf) (Max) @ Kama: 580mV @ 100mA, Kasi: Small Signal =< 200mA (Io), Any Speed, Rudisha Saa ya Kuokoa (trr): 1.5ns,

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Toshiba Semiconductor and Storage

CMS09(TE12L)

Sehemu ya hisa.: 262

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 450mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS04(TE85L)

Sehemu ya hisa.: 173

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 510mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS02(TE12L)

Sehemu ya hisa.: 183

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 400mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS04(TE12L)

Sehemu ya hisa.: 211

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 370mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS11(TE12L)

Sehemu ya hisa.: 213

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS09(TE85L)

Sehemu ya hisa.: 196

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 460mV @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS08(TE85L)

Sehemu ya hisa.: 264

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 360mV @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRH01(TE85L)

Sehemu ya hisa.: 5028

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 980mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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Toshiba Semiconductor and Storage

CRS01(TE85L)

Sehemu ya hisa.: 200

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 360mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS11(TE85L)

Sehemu ya hisa.: 264

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 360mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS01(TE12L)

Sehemu ya hisa.: 178

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 370mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS01(TE12L,Q,M)

Sehemu ya hisa.: 129014

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 370mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CCS15S30,L3QUF

Sehemu ya hisa.: 124325

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 400mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS10F30,H3F

Sehemu ya hisa.: 143420

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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