Transistors - FETs, MOSFETs - Moja

TPH3202PD

TPH3202PD

Sehemu ya hisa.: 7016

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V,

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TPH3205WSB

TPH3205WSB

Sehemu ya hisa.: 3254

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 36A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 60 mOhm @ 22A, 8V,

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TPH3208PD

TPH3208PD

Sehemu ya hisa.: 986

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V,

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TPH3207WS

TPH3207WS

Sehemu ya hisa.: 2351

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 41 mOhm @ 32A, 8V,

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TPH3206LS

TPH3206LS

Sehemu ya hisa.: 6040

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 17A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V,

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TPH3208LS

TPH3208LS

Sehemu ya hisa.: 5664

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V,

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TPH3208PS

TPH3208PS

Sehemu ya hisa.: 6263

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V,

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TPH3206PD

TPH3206PD

Sehemu ya hisa.: 5709

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 17A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V,

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TPH3206PS

TPH3206PS

Sehemu ya hisa.: 6777

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 17A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V,

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TP65H035WS

TP65H035WS

Sehemu ya hisa.: 2828

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 46.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 12V, Rds On (Max) @ Id, Vgs: 41 mOhm @ 30A, 10V,

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TPH3208LDG

TPH3208LDG

Sehemu ya hisa.: 5597

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V,

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TPH3206LDGB

TPH3206LDGB

Sehemu ya hisa.: 6072

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V,

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TP65H050WS

TP65H050WS

Sehemu ya hisa.: 1890

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 34A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 12V, Rds On (Max) @ Id, Vgs: 60 mOhm @ 22A, 10V,

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TPH3206LD

TPH3206LD

Sehemu ya hisa.: 6066

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 17A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V,

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TPH3208LSG

TPH3208LSG

Sehemu ya hisa.: 1701

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 14A, 8V,

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TPH3205WSBQA

TPH3205WSBQA

Sehemu ya hisa.: 2970

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 35A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 62 mOhm @ 22A, 8V,

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TPH3206PSB

TPH3206PSB

Sehemu ya hisa.: 6741

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V,

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TP90H180PS

TP90H180PS

Sehemu ya hisa.: 2997

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 205 mOhm @ 10A, 10V,

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TPH3206LSB

TPH3206LSB

Sehemu ya hisa.: 6120

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V,

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TPH3212PS

TPH3212PS

Sehemu ya hisa.: 4430

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 27A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 72 mOhm @ 17A, 8V,

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TPH3202LD

TPH3202LD

Sehemu ya hisa.: 6662

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V,

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TPH3202LS

TPH3202LS

Sehemu ya hisa.: 6623

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V,

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TPH3208LD

TPH3208LD

Sehemu ya hisa.: 5648

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V,

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TPH3202PS

TPH3202PS

Sehemu ya hisa.: 7016

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V,

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TPH3206LDB

TPH3206LDB

Sehemu ya hisa.: 6074

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V,

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