Transistors - FETs, MOSFETs - Moja | Bidhaa tofauti za semiconductor | 100

SIHP22N60E-E3

Sehemu ya hisa.: 16452

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 21A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V,

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Vishay Siliconix

IRFP440PBF

Sehemu ya hisa.: 23943

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 850 mOhm @ 5.3A, 10V,

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Vishay Siliconix

SI7172DP-T1-GE3

Sehemu ya hisa.: 54246

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 25A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 70 mOhm @ 5.9A, 10V,

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Vishay Siliconix

SI8810EDB-T2-E1

Sehemu ya hisa.: 162917

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 72 mOhm @ 1A, 4.5V,

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Vishay Siliconix

SI7114DN-T1-GE3

Sehemu ya hisa.: 113494

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11.7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 18.3A, 10V,

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Vishay Siliconix

IRFP450LCPBF

Sehemu ya hisa.: 9460

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V,

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Vishay Siliconix

SUD50P06-15L-T4-E3

Sehemu ya hisa.: 47304

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 15 mOhm @ 17A, 10V,

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Vishay Siliconix

SI2318CDS-T1-GE3

Sehemu ya hisa.: 125656

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.3A, 10V,

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Vishay Siliconix

SI2304DDS-T1-GE3

Sehemu ya hisa.: 127703

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.3A (Ta), 3.6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.2A, 10V,

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Vishay Siliconix

SIHB22N60AEL-GE3

Sehemu ya hisa.: 674

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 21A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V,

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Vishay Siliconix

SIHG47N60E-GE3

Sehemu ya hisa.: 6887

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 47A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 64 mOhm @ 24A, 10V,

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Vishay Siliconix

SIHA30N60AEL-GE3

Sehemu ya hisa.: 347

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 120 mOhm @ 15A, 10V,

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Vishay Siliconix

SIHG22N60EL-GE3

Sehemu ya hisa.: 336

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 21A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 197 mOhm @ 11A, 10V,

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Vishay Siliconix

SIHB22N60EL-GE3

Sehemu ya hisa.: 428

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 21A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 197 mOhm @ 11A, 10V,

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Vishay Siliconix

SIHH11N60EF-T1-GE3

Sehemu ya hisa.: 35089

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 357 mOhm @ 5.5A, 10V,

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Vishay Siliconix

IRFR310PBF

Sehemu ya hisa.: 43158

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 400V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.7A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V,

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Vishay Siliconix

IRFP21N60LPBF

Sehemu ya hisa.: 9015

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 21A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 320 mOhm @ 13A, 10V,

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Vishay Siliconix

SIHP30N60AEL-GE3

Sehemu ya hisa.: 293

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 120 mOhm @ 15A, 10V,

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Vishay Siliconix

SI1499DH-T1-GE3

Sehemu ya hisa.: 107391

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 8V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.2V, 4.5V, Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V,

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Vishay Siliconix

SIHB30N60AEL-GE3

Sehemu ya hisa.: 358

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 120 mOhm @ 15A, 10V,

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Vishay Siliconix

SIHG33N65EF-GE3

Sehemu ya hisa.: 9665

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 31.6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 109 mOhm @ 16.5A, 10V,

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Vishay Siliconix

SUD50P06-15L-E3

Sehemu ya hisa.: 57428

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 15 mOhm @ 17A, 10V,

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Vishay Siliconix

SI7852ADP-T1-E3

Sehemu ya hisa.: 50096

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 8V, 10V, Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V,

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Vishay Siliconix

SIHP22N60AEL-GE3

Sehemu ya hisa.: 669

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 21A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V,

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Vishay Siliconix

IRFP350LCPBF

Sehemu ya hisa.: 10289

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 400V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 9.6A, 10V,

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Vishay Siliconix

SIHG22N60E-E3

Sehemu ya hisa.: 14945

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 21A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V,

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Vishay Siliconix

SQD45N05-20L-GE3

Sehemu ya hisa.: 39079

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 50V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V,

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Vishay Siliconix

IRLR024TRL

Sehemu ya hisa.: 38809

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 5V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 5V,

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Vishay Siliconix

SUD50P10-43L-E3

Sehemu ya hisa.: 57376

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 37.1A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 43 mOhm @ 9.2A, 10V,

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Vishay Siliconix

IRFD320PBF

Sehemu ya hisa.: 35775

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 400V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 490mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 210mA, 10V,

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Vishay Siliconix

SIHP25N50E-GE3

Sehemu ya hisa.: 20682

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 26A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V,

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Vishay Siliconix

SUD50P04-09L-E3

Sehemu ya hisa.: 57437

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 24A, 10V,

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Vishay Siliconix

SUP90140E-GE3

Sehemu ya hisa.: 19863

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 90A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 7.5V, 10V, Rds On (Max) @ Id, Vgs: 17 mOhm @ 30A, 10V,

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Vishay Siliconix

SI7461DP-T1-GE3

Sehemu ya hisa.: 85828

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 14.4A, 10V,

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Vishay Siliconix

IRFP260PBF

Sehemu ya hisa.: 13734

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 46A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 55 mOhm @ 28A, 10V,

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Vishay Semiconductor Diodes Division

VS-FB190SA10

Sehemu ya hisa.: 2590

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 190A, Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 180A, 10V,

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