Transistors - FETs, MOSFETs - Moja

Nyumbani
Transistors - FETs, MOSFETs - Moja

Vishay Siliconix

IRF510PBF

Sehemu ya hisa.: 69121

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 540 mOhm @ 3.4A, 10V,

Wishlist.

SIHG70N60AEF-GE3

Vishay Siliconix

SIHG70N60AEF-GE3

Sehemu ya hisa.: 9966

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 41 mOhm @ 35A, 10V,

Wishlist.

Vishay Siliconix

IRFR014PBF

Sehemu ya hisa.: 63750

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.7A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V,

Wishlist.

Vishay Siliconix

IRLL110PBF

Sehemu ya hisa.: 6022

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 5V, Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 5V,

Wishlist.

Vishay Siliconix

IRF540STRLPBF

Sehemu ya hisa.: 74897

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V,

Wishlist.

SI7370DP-T1-GE3

Vishay Siliconix

SI7370DP-T1-GE3

Sehemu ya hisa.: 49896

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V,

Wishlist.

Vishay Siliconix

IRF644NLPBF

Sehemu ya hisa.: 9624

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V,

Wishlist.

Vishay Siliconix

SI7810DN-T1-E3

Sehemu ya hisa.: 147249

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 62 mOhm @ 5.4A, 10V,

Wishlist.

SISA34DN-T1-GE3

Vishay Siliconix

SISA34DN-T1-GE3

Sehemu ya hisa.: 113506

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 40A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 10A, 10V,

Wishlist.

Vishay Siliconix

IRFP22N60C3PBF

Sehemu ya hisa.: 9618

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 22A (Ta),

Wishlist.

SI7792DP-T1-GE3

Vishay Siliconix

SI7792DP-T1-GE3

Sehemu ya hisa.: 9613

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 40.6A (Ta), 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 20A, 10V,

Wishlist.

SIA485DJ-T1-GE3

Vishay Siliconix

SIA485DJ-T1-GE3

Sehemu ya hisa.: 16294

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 500mA, 10V,

Wishlist.

SUD06N10-225L-GE3

Vishay Siliconix

SUD06N10-225L-GE3

Sehemu ya hisa.: 9485

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 3A, 10V,

Wishlist.

SQD50P08-25L_GE3

Vishay Siliconix

SQD50P08-25L_GE3

Sehemu ya hisa.: 60910

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 10.5A, 10V,

Wishlist.

SI2307BDS-T1-GE3

Vishay Siliconix

SI2307BDS-T1-GE3

Sehemu ya hisa.: 171297

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 78 mOhm @ 3.2A, 10V,

Wishlist.

Vishay Siliconix

IRF744PBF

Sehemu ya hisa.: 9639

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 450V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 630 mOhm @ 5.3A, 10V,

Wishlist.

SISC06DN-T1-GE3

Vishay Siliconix

SISC06DN-T1-GE3

Sehemu ya hisa.: 16233

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 27.6A (Ta), 40A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 15A, 10V,

Wishlist.

Vishay Siliconix

SUD50P04-15-E3

Sehemu ya hisa.: 51935

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V,

Wishlist.

Vishay Siliconix

SI7478DP-T1-E3

Sehemu ya hisa.: 72320

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 20A, 10V,

Wishlist.

Vishay Siliconix

IRFIB8N50KPBF

Sehemu ya hisa.: 9634

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.7A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V,

Wishlist.

Vishay Siliconix

IRFL014PBF

Sehemu ya hisa.: 5979

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.7A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 10V,

Wishlist.

Vishay Siliconix

IRCZ44PBF

Sehemu ya hisa.: 6053

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V,

Wishlist.

Vishay Siliconix

SI7114DN-T1-E3

Sehemu ya hisa.: 113510

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11.7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 18.3A, 10V,

Wishlist.

Vishay Siliconix

SI1012X-T1-GE3

Sehemu ya hisa.: 166571

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 500mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V,

Wishlist.

SI2304BDS-T1-E3

Vishay Siliconix

SI2304BDS-T1-E3

Sehemu ya hisa.: 156329

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.5A, 10V,

Wishlist.

Vishay Siliconix

IRC530PBF

Sehemu ya hisa.: 9604

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V,

Wishlist.

Vishay Siliconix

IRF634NSPBF

Sehemu ya hisa.: 9603

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 435 mOhm @ 4.8A, 10V,

Wishlist.

SIRA16DP-T1-GE3

Vishay Siliconix

SIRA16DP-T1-GE3

Sehemu ya hisa.: 188301

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V,

Wishlist.

Vishay Siliconix

IRFP354PBF

Sehemu ya hisa.: 9629

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 450V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 350 mOhm @ 8.4A, 10V,

Wishlist.

SIR468DP-T1-GE3

Vishay Siliconix

SIR468DP-T1-GE3

Sehemu ya hisa.: 125225

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 40A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V,

Wishlist.

Vishay Siliconix

IRF640LPBF

Sehemu ya hisa.: 9700

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V,

Wishlist.

Vishay Siliconix

SUD25N15-52-E3

Sehemu ya hisa.: 85786

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 25A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 10V,

Wishlist.

SI2338DS-T1-GE3

Vishay Siliconix

SI2338DS-T1-GE3

Sehemu ya hisa.: 132450

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.5A, 10V,

Wishlist.

SI3443DDV-T1-GE3

Vishay Siliconix

SI3443DDV-T1-GE3

Sehemu ya hisa.: 117106

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Ta), 5.3A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 47 mOhm @ 4.5A, 4.5V,

Wishlist.

Vishay Siliconix

IRFB9N30APBF

Sehemu ya hisa.: 9644

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 300V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.3A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.6A, 10V,

Wishlist.

Vishay Siliconix

IRFR9110TRPBF

Sehemu ya hisa.: 189451

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.1A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V,

Wishlist.

3600

«
53
54
55
56
57
58
59
60
61
62
»