Transistors - FETs, MOSFETs - Moja

AOD403_DELTA

Sehemu ya hisa.: 2127

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15A (Ta), 70A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, 20V, Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 20A, 20V,

AOD4102L

Sehemu ya hisa.: 2167

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Ta), 19A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 37 mOhm @ 12A, 10V,

AOD403_030

Sehemu ya hisa.: 2111

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15A (Ta), 70A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, 20V, Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 20A, 20V,

AOD206_030

Sehemu ya hisa.: 2125

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18A (Ta), 46A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 4.5V,

AO6411

Sehemu ya hisa.: 2171

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V,

AO7403_001

Sehemu ya hisa.: 2111

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 700mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 470 mOhm @ 700mA, 4.5V,

AO5404E_001

Sehemu ya hisa.: 2169

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 500mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 4.5V,

AO5404EL

Sehemu ya hisa.: 2148

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 500mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 4.5V,

AO4771L

Sehemu ya hisa.: 2144

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 68 mOhm @ 4A, 10V,

AO4710L_101

Sehemu ya hisa.: 6241

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12.7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 11.8 mOhm @ 12.7A, 10V,

AO4488L_101

Sehemu ya hisa.: 2124

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V,

AO4498EL

Sehemu ya hisa.: 2189

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 18A, 10V,

AO4485_102

Sehemu ya hisa.: 2105

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 15 mOhm @ 10A, 10V,

AO4404BL_101

Sehemu ya hisa.: 2103

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 10V, Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.5A, 10V,

AO4437L

Sehemu ya hisa.: 2175

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 11A, 4.5V,

AO4202_120

Sehemu ya hisa.: 2149

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 19A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 19A, 10V,

AOY516

Sehemu ya hisa.: 6234

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 46A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V,

AON6516_151

Sehemu ya hisa.: 6224

Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V,

AON7548

Sehemu ya hisa.: 6244

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 24A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 20A, 10V,

AOD526

Sehemu ya hisa.: 2176

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V,

AOI452A

Sehemu ya hisa.: 2100

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 55A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 20A, 10V,

AOD516_051

Sehemu ya hisa.: 6275

Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V,

AOD518_051

Sehemu ya hisa.: 2140

Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V,

AOB20C60

Sehemu ya hisa.: 6275

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V,

AOD4160

Sehemu ya hisa.: 2097

AOB11C60

Sehemu ya hisa.: 2095

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 440 mOhm @ 5.5A, 10V,

AO4304_001

Sehemu ya hisa.: 6227

Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V,

AO4264

Sehemu ya hisa.: 2161

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V,

AUXMOS20956STR

Sehemu ya hisa.: 2131

AUXS20956S

Sehemu ya hisa.: 2187

APT80SM120S

Sehemu ya hisa.: 2172

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 80A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 55 mOhm @ 40A, 20V,

APT80SM120J

Sehemu ya hisa.: 2121

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 51A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 55 mOhm @ 40A, 20V,

APT80SM120B

Sehemu ya hisa.: 2112

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 80A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 55 mOhm @ 40A, 20V,

APT70SM70J

Sehemu ya hisa.: 6264

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 700V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 49A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 70 mOhm @ 32.5A, 20V,

APT70SM70S

Sehemu ya hisa.: 2124

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 700V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 65A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 70 mOhm @ 32.5A, 20V,

APT25SM120S

Sehemu ya hisa.: 2166

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 25A (Tc), Rds On (Max) @ Id, Vgs: 175 mOhm @ 10A, 20V,