Transistors - FETs, MOSFETs - Moja

2N7227

Sehemu ya hisa.: 1694

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 400V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 315 mOhm @ 9A, 10V,

2N7225

Sehemu ya hisa.: 1611

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 27.4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 17A, 10V,

2N7224U

Sehemu ya hisa.: 1683

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 34A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 81 mOhm @ 34A, 10V,

2N7224

Sehemu ya hisa.: 1652

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 34A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 70 mOhm @ 21A, 10V,

2N6901

Sehemu ya hisa.: 1637

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.69A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 1.07A, 5V,

2N7236

Sehemu ya hisa.: 1547

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 11A, 10V,

2SK2035(T5L,F,T)

Sehemu ya hisa.: 1665

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 2.5V,

2SK1829TE85LF

Sehemu ya hisa.: 1614

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, Rds On (Max) @ Id, Vgs: 40 Ohm @ 10mA, 2.5V,

2SK3309(TE24L,Q)

Sehemu ya hisa.: 1621

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 450V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 650 mOhm @ 5A, 10V,

2SK2967(F)

Sehemu ya hisa.: 6205

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V,

2SK3385(0)-Z-E1-AZ

Sehemu ya hisa.: 1571

2SK4151TZ-E

Sehemu ya hisa.: 1558

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4V, Rds On (Max) @ Id, Vgs: 1.95 Ohm @ 500mA, 4V,

2SK4093TZ-E

Sehemu ya hisa.: 1571

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4V, Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 500mA, 4V,

2SK4150TZ-E

Sehemu ya hisa.: 1515

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 400mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4V, Rds On (Max) @ Id, Vgs: 5.7 Ohm @ 200mA, 4V,

2SK2225-E

Sehemu ya hisa.: 6158

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 12 Ohm @ 1A, 15V,

2SK1342-E

Sehemu ya hisa.: 1570

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V,

2SK1775-E

Sehemu ya hisa.: 1594

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V,

2SK1340-E

Sehemu ya hisa.: 1567

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 3A, 10V,

2SK1341-E

Sehemu ya hisa.: 1594

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 3A, 10V,

2SK1339-E

Sehemu ya hisa.: 1582

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 7 Ohm @ 1.5A, 10V,

2SK302200L

Sehemu ya hisa.: 1551

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V,

2SK326800L

Sehemu ya hisa.: 1465

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 12A, 10V,

2SK303000L

Sehemu ya hisa.: 84713

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 230 mOhm @ 4A, 10V,

2SK302500L

Sehemu ya hisa.: 40869

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V,

2N7002-E3

Sehemu ya hisa.: 1534

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 115mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

2N7002-D87Z

Sehemu ya hisa.: 1492

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 115mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

2SK4198FS

Sehemu ya hisa.: 5624

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.34 Ohm @ 2.5A, 10V,

2SK4197FS

Sehemu ya hisa.: 1470

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.3A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.25 Ohm @ 1.8A, 10V,

2SK536-TB-E

Sehemu ya hisa.: 129781

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 50V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 20 Ohm @ 10mA, 10V,

2N7639-GA

Sehemu ya hisa.: 318

Teknolojia: SiC (Silicon Carbide Junction Transistor), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15A (Tc) (155°C), Rds On (Max) @ Id, Vgs: 105 mOhm @ 15A,

2N7638-GA

Sehemu ya hisa.: 339

Teknolojia: SiC (Silicon Carbide Junction Transistor), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Tc) (158°C), Rds On (Max) @ Id, Vgs: 170 mOhm @ 8A,

2N7637-GA

Sehemu ya hisa.: 369

Teknolojia: SiC (Silicon Carbide Junction Transistor), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 170 mOhm @ 7A,

2N7636-GA

Sehemu ya hisa.: 431

Teknolojia: SiC (Silicon Carbide Junction Transistor), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A,

2N7635-GA

Sehemu ya hisa.: 376

Teknolojia: SiC (Silicon Carbide Junction Transistor), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A,

2N7002-G

Sehemu ya hisa.: 134471

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 115mA (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

2N7002-HF

Sehemu ya hisa.: 175303

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 250mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V,