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Transistors - FETs, MOSFETs - Moja

2SK4066-E
ON Semiconductor

2SK4066-E

Sehemu ya hisa.: 1172

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V,

Kwa wishlist.
2SK4066-DL-E
ON Semiconductor

2SK4066-DL-E

Sehemu ya hisa.: 1110

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V,

Kwa wishlist.
2SK4043LS
ON Semiconductor

2SK4043LS

Sehemu ya hisa.: 1127

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4V, Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 4V,

Kwa wishlist.
2SK4065-DL-E
ON Semiconductor

2SK4065-DL-E

Sehemu ya hisa.: 1115

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V,

Kwa wishlist.
2SK3748
ON Semiconductor

2SK3748

Sehemu ya hisa.: 1129

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 7 Ohm @ 2A, 10V,

Kwa wishlist.
2SK3747-MG8
ON Semiconductor

2SK3747-MG8

Sehemu ya hisa.: 1091

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V,

Kwa wishlist.
2SK3746
ON Semiconductor

2SK3746

Sehemu ya hisa.: 1143

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V,

Kwa wishlist.
2SK3747
ON Semiconductor

2SK3747

Sehemu ya hisa.: 1187

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V,

Kwa wishlist.
2SK3704
ON Semiconductor

2SK3704

Sehemu ya hisa.: 1118

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 45A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 14 mOhm @ 23A, 10V,

Kwa wishlist.
2SK3745LS
ON Semiconductor

2SK3745LS

Sehemu ya hisa.: 1162

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V,

Kwa wishlist.
2SK3703
ON Semiconductor

2SK3703

Sehemu ya hisa.: 6201

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 26 mOhm @ 15A, 10V,

Kwa wishlist.
2SJ652-RA11
ON Semiconductor

2SJ652-RA11

Sehemu ya hisa.: 1181

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 38 mOhm @ 14A, 10V,

Kwa wishlist.
2SK4125
ON Semiconductor

2SK4125

Sehemu ya hisa.: 829

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 17A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 610 mOhm @ 7A, 10V,

Kwa wishlist.
2SJ656
ON Semiconductor

2SJ656

Sehemu ya hisa.: 835

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 75.5 mOhm @ 9A, 10V,

Kwa wishlist.
2SK4124
ON Semiconductor

2SK4124

Sehemu ya hisa.: 818

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V,

Kwa wishlist.
2SK4171
ON Semiconductor

2SK4171

Sehemu ya hisa.: 814

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 50A, 10V,

Kwa wishlist.
2SK4085LS
ON Semiconductor

2SK4085LS

Sehemu ya hisa.: 852

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V,

Kwa wishlist.
2SK3708
ON Semiconductor

2SK3708

Sehemu ya hisa.: 838

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 33 mOhm @ 15A, 10V,

Kwa wishlist.
2SK3707
ON Semiconductor

2SK3707

Sehemu ya hisa.: 828

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V,

Kwa wishlist.
2N7002E
Vishay Siliconix

2N7002E

Sehemu ya hisa.: 125033

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 240mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V,

Kwa wishlist.
2N7002K,215
NXP USA Inc.

2N7002K,215

Sehemu ya hisa.: 892

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 340mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 500mA, 10V,

Kwa wishlist.
2N7002L6327HTSA1
Infineon Technologies

2N7002L6327HTSA1

Sehemu ya hisa.: 723

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 300mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V,

Kwa wishlist.
2SK4021(Q)
Toshiba Semiconductor and Storage

2SK4021(Q)

Sehemu ya hisa.: 783

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V,

Kwa wishlist.
2SK4017(Q)
Toshiba Semiconductor and Storage

2SK4017(Q)

Sehemu ya hisa.: 100330

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.5A, 10V,

Kwa wishlist.
2SK4016(Q)
Toshiba Semiconductor and Storage

2SK4016(Q)

Sehemu ya hisa.: 6095

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.5A, 10V,

Kwa wishlist.
2SK3868(Q,M)
Toshiba Semiconductor and Storage

2SK3868(Q,M)

Sehemu ya hisa.: 709

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V,

Kwa wishlist.
2SK3906(Q)
Toshiba Semiconductor and Storage

2SK3906(Q)

Sehemu ya hisa.: 711

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 330 mOhm @ 10A, 10V,

Kwa wishlist.
2SK3844(Q)
Toshiba Semiconductor and Storage

2SK3844(Q)

Sehemu ya hisa.: 756

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 45A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 23A, 10V,

Kwa wishlist.
2SK3662(F)
Toshiba Semiconductor and Storage

2SK3662(F)

Sehemu ya hisa.: 712

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 35A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 18A, 10V,

Kwa wishlist.
2SK3462(TE16L1,NQ)
Toshiba Semiconductor and Storage

2SK3462(TE16L1,NQ)

Sehemu ya hisa.: 761

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 1.5A, 10V,

Kwa wishlist.
2SK3466(TE24L,Q)
Toshiba Semiconductor and Storage

2SK3466(TE24L,Q)

Sehemu ya hisa.: 730

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 5A, 10V,

Kwa wishlist.
2SK3388(TE24L,Q)
Toshiba Semiconductor and Storage

2SK3388(TE24L,Q)

Sehemu ya hisa.: 727

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V,

Kwa wishlist.
2SK3403(Q)
Toshiba Semiconductor and Storage

2SK3403(Q)

Sehemu ya hisa.: 759

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 450V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V,

Kwa wishlist.
2SK3313(Q)
Toshiba Semiconductor and Storage

2SK3313(Q)

Sehemu ya hisa.: 769

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 620 mOhm @ 6A, 10V,

Kwa wishlist.
2SK3342(TE16L1,NQ)
Toshiba Semiconductor and Storage

2SK3342(TE16L1,NQ)

Sehemu ya hisa.: 768

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V,

Kwa wishlist.
2SK2883(TE24L,Q)
Toshiba Semiconductor and Storage

2SK2883(TE24L,Q)

Sehemu ya hisa.: 752

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.5A, 10V,

Kwa wishlist.