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Transistors - FETs, MOSFETs - Moja

BUK6C2R1-55C,118
Nexperia USA Inc.

BUK6C2R1-55C,118

Sehemu ya hisa.: 46841

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 228A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 90A, 10V,

Kwa wishlist.
BUK969R0-60E,118
Nexperia USA Inc.

BUK969R0-60E,118

Sehemu ya hisa.: 102324

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 75A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V,

Kwa wishlist.
BUK9Y30-75B/C2,115
Nexperia USA Inc.

BUK9Y30-75B/C2,115

Sehemu ya hisa.: 1130

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 34A, Rds On (Max) @ Id, Vgs: 28 mOhm @ 15A, 10V,

Kwa wishlist.
BUK9Y19-55B/C2,115
Nexperia USA Inc.

BUK9Y19-55B/C2,115

Sehemu ya hisa.: 1164

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 46A, Rds On (Max) @ Id, Vgs: 17.3 mOhm @ 20A, 10V,

Kwa wishlist.
BSP110,115
Nexperia USA Inc.

BSP110,115

Sehemu ya hisa.: 1086

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 520mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 10 Ohm @ 150mA, 5V,

Kwa wishlist.
BUK6E2R0-30C,127
Nexperia USA Inc.

BUK6E2R0-30C,127

Sehemu ya hisa.: 31040

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V,

Kwa wishlist.
BUK6507-75C,127
Nexperia USA Inc.

BUK6507-75C,127

Sehemu ya hisa.: 1003

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 25A, 10V,

Kwa wishlist.
BUK7607-30B,118
Nexperia USA Inc.

BUK7607-30B,118

Sehemu ya hisa.: 156921

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 75A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V,

Kwa wishlist.
BUK725R0-40C,118
Nexperia USA Inc.

BUK725R0-40C,118

Sehemu ya hisa.: 145924

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 75A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V,

Kwa wishlist.
BUK724R5-30C,118
Nexperia USA Inc.

BUK724R5-30C,118

Sehemu ya hisa.: 145943

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 75A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V,

Kwa wishlist.
BUK763R6-40C,118
Nexperia USA Inc.

BUK763R6-40C,118

Sehemu ya hisa.: 1007

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V,

Kwa wishlist.
BUK754R0-40C,127
Nexperia USA Inc.

BUK754R0-40C,127

Sehemu ya hisa.: 1037

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V,

Kwa wishlist.
BUK761R8-30C,118
NXP USA Inc.

BUK761R8-30C,118

Sehemu ya hisa.: 978

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V,

Kwa wishlist.
BUK7619-100B,118
NXP USA Inc.

BUK7619-100B,118

Sehemu ya hisa.: 6106

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 64A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 19 mOhm @ 25A, 10V,

Kwa wishlist.
BSC0908NSATMA1
Infineon Technologies

BSC0908NSATMA1

Sehemu ya hisa.: 1017

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 34V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A (Ta), 49A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V,

Kwa wishlist.
BSS816NW L6327
Infineon Technologies

BSS816NW L6327

Sehemu ya hisa.: 875

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 2.5V, Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 2.5V,

Kwa wishlist.
BSS314PEL6327HTSA1
Infineon Technologies

BSS314PEL6327HTSA1

Sehemu ya hisa.: 879

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 10V,

Kwa wishlist.
BSS806NL6327HTSA1
Infineon Technologies

BSS806NL6327HTSA1

Sehemu ya hisa.: 961

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 2.5V, Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V,

Kwa wishlist.
BSS159NH6327XTSA1
Infineon Technologies

BSS159NH6327XTSA1

Sehemu ya hisa.: 894

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 230mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, 10V, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V,

Kwa wishlist.
BSS127H6327XTSA1
Infineon Technologies

BSS127H6327XTSA1

Sehemu ya hisa.: 920

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 21mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

Kwa wishlist.
BSS126H6327XTSA1
Infineon Technologies

BSS126H6327XTSA1

Sehemu ya hisa.: 899

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 21mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, 10V, Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

Kwa wishlist.
BSF083N03LQ G
Infineon Technologies

BSF083N03LQ G

Sehemu ya hisa.: 6168

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), 53A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 20A, 10V,

Kwa wishlist.
BSF053N03LT G
Infineon Technologies

BSF053N03LT G

Sehemu ya hisa.: 917

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Ta), 71A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 30A, 10V,

Kwa wishlist.
BSB024N03LX G
Infineon Technologies

BSB024N03LX G

Sehemu ya hisa.: 881

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 27A (Ta), 145A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 30A, 10V,

Kwa wishlist.
BSB053N03LP G
Infineon Technologies

BSB053N03LP G

Sehemu ya hisa.: 882

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 17A (Ta), 71A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 30A, 10V,

Kwa wishlist.
BSB019N03LX G
Infineon Technologies

BSB019N03LX G

Sehemu ya hisa.: 1636

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 32A (Ta), 174A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 30A, 10V,

Kwa wishlist.
BSS205NL6327HTSA1
Infineon Technologies

BSS205NL6327HTSA1

Sehemu ya hisa.: 867

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V,

Kwa wishlist.
BSO220N03MSGXUMA1
Infineon Technologies

BSO220N03MSGXUMA1

Sehemu ya hisa.: 941

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 22 mOhm @ 8.6A, 10V,

Kwa wishlist.
BSL802SNL6327HTSA1
Infineon Technologies

BSL802SNL6327HTSA1

Sehemu ya hisa.: 843

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 2.5V, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 2.5V,

Kwa wishlist.
BSL302SNL6327HTSA1
Infineon Technologies

BSL302SNL6327HTSA1

Sehemu ya hisa.: 912

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.1A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V,

Kwa wishlist.
BSD214SN L6327
Infineon Technologies

BSD214SN L6327

Sehemu ya hisa.: 923

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V,

Kwa wishlist.
BSC200P03LSGAUMA1
Infineon Technologies

BSC200P03LSGAUMA1

Sehemu ya hisa.: 884

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.9A (Ta), 12.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 20 mOhm @ 12.5A, 10V,

Kwa wishlist.
BSS215PL6327HTSA1
Infineon Technologies

BSS215PL6327HTSA1

Sehemu ya hisa.: 873

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 4.5V,

Kwa wishlist.
BSS315PL6327HTSA1
Infineon Technologies

BSS315PL6327HTSA1

Sehemu ya hisa.: 914

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 10V,

Kwa wishlist.
BSO130N03MSGXUMA1
Infineon Technologies

BSO130N03MSGXUMA1

Sehemu ya hisa.: 855

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.1A, 10V,

Kwa wishlist.
BSS83PL6327HTSA1
Infineon Technologies

BSS83PL6327HTSA1

Sehemu ya hisa.: 886

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 330mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2 Ohm @ 330mA, 10V,

Kwa wishlist.