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Transistors - FETs, MOSFETs - Moja

BUK9608-55A,118
Nexperia USA Inc.

BUK9608-55A,118

Sehemu ya hisa.: 81443

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 75A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V,

Kwa wishlist.
BSS138LT3
ON Semiconductor

BSS138LT3

Sehemu ya hisa.: 281

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 50V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V,

Kwa wishlist.
BSS123LT3
ON Semiconductor

BSS123LT3

Sehemu ya hisa.: 305

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 170mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V,

Kwa wishlist.
BSS123LT3G
ON Semiconductor

BSS123LT3G

Sehemu ya hisa.: 251

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 170mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V,

Kwa wishlist.
BS170RLRPG
ON Semiconductor

BS170RLRPG

Sehemu ya hisa.: 339

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 500mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V,

Kwa wishlist.
BS170RLRP
ON Semiconductor

BS170RLRP

Sehemu ya hisa.: 277

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 500mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V,

Kwa wishlist.
BS170G
ON Semiconductor

BS170G

Sehemu ya hisa.: 6047

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 500mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V,

Kwa wishlist.
BS108G
ON Semiconductor

BS108G

Sehemu ya hisa.: 5654

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 250mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2V, 2.8V, Rds On (Max) @ Id, Vgs: 8 Ohm @ 100mA, 2.8V,

Kwa wishlist.
BS107G
ON Semiconductor

BS107G

Sehemu ya hisa.: 6088

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 250mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.6V, 10V, Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V,

Kwa wishlist.
BS107ARL1G
ON Semiconductor

BS107ARL1G

Sehemu ya hisa.: 245

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 250mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.4 Ohm @ 250mA, 10V,

Kwa wishlist.
BS107ARL1
ON Semiconductor

BS107ARL1

Sehemu ya hisa.: 306

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 250mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.4 Ohm @ 250mA, 10V,

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BS170P
Diodes Incorporated

BS170P

Sehemu ya hisa.: 82285

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 270mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V,

Kwa wishlist.
BSS87L6327HTSA1
Infineon Technologies

BSS87L6327HTSA1

Sehemu ya hisa.: 311

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 240V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 260mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V,

Kwa wishlist.
BSS84PW
Infineon Technologies

BSS84PW

Sehemu ya hisa.: 246

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 150mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 10V,

Kwa wishlist.
BSS84PL6327HTSA1
Infineon Technologies

BSS84PL6327HTSA1

Sehemu ya hisa.: 264

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 170mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8 Ohm @ 170mA, 10V,

Kwa wishlist.
BSS192PL6327HTSA1
Infineon Technologies

BSS192PL6327HTSA1

Sehemu ya hisa.: 303

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 190mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.8V, 10V, Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V,

Kwa wishlist.
BSS7728N
Infineon Technologies

BSS7728N

Sehemu ya hisa.: 298

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

Kwa wishlist.
BSS138NL6327HTSA1
Infineon Technologies

BSS138NL6327HTSA1

Sehemu ya hisa.: 227

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 230mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V,

Kwa wishlist.
BSS138W E6327
Infineon Technologies

BSS138W E6327

Sehemu ya hisa.: 295

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 280mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V,

Kwa wishlist.
BSS123L6327HTSA1
Infineon Technologies

BSS123L6327HTSA1

Sehemu ya hisa.: 228

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 170mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

Kwa wishlist.
BSP92PL6327HTSA1
Infineon Technologies

BSP92PL6327HTSA1

Sehemu ya hisa.: 265

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 260mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12 Ohm @ 260mA, 10V,

Kwa wishlist.
BSP89L6327HTSA1
Infineon Technologies

BSP89L6327HTSA1

Sehemu ya hisa.: 257

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 240V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 350mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V,

Kwa wishlist.
BSP613PL6327HUSA1
Infineon Technologies

BSP613PL6327HUSA1

Sehemu ya hisa.: 321

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V,

Kwa wishlist.
BSP372L6327HTSA1
Infineon Technologies

BSP372L6327HTSA1

Sehemu ya hisa.: 290

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 310 mOhm @ 1.7A, 5V,

Kwa wishlist.
BSP373L6327HTSA1
Infineon Technologies

BSP373L6327HTSA1

Sehemu ya hisa.: 6061

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.7A, 10V,

Kwa wishlist.
BSP316PL6327HTSA1
Infineon Technologies

BSP316PL6327HTSA1

Sehemu ya hisa.: 238

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 680mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 680mA, 10V,

Kwa wishlist.
BSP317PL6327HTSA1
Infineon Technologies

BSP317PL6327HTSA1

Sehemu ya hisa.: 303

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 430mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 430mA, 10V,

Kwa wishlist.
BSP297L6327HTSA1
Infineon Technologies

BSP297L6327HTSA1

Sehemu ya hisa.: 301

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 660mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V,

Kwa wishlist.
BSP315PL6327HTSA1
Infineon Technologies

BSP315PL6327HTSA1

Sehemu ya hisa.: 253

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.17A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V,

Kwa wishlist.
BSP296L6327HTSA1
Infineon Technologies

BSP296L6327HTSA1

Sehemu ya hisa.: 270

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.1A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V,

Kwa wishlist.
BSP295L6327HTSA1
Infineon Technologies

BSP295L6327HTSA1

Sehemu ya hisa.: 290

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V,

Kwa wishlist.
BSP171PL6327HTSA1
Infineon Technologies

BSP171PL6327HTSA1

Sehemu ya hisa.: 6106

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V,

Kwa wishlist.
BSP170PL6327HTSA1
Infineon Technologies

BSP170PL6327HTSA1

Sehemu ya hisa.: 276

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V,

Kwa wishlist.
BSO300N03S
Infineon Technologies

BSO300N03S

Sehemu ya hisa.: 251

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.2A, 10V,

Kwa wishlist.
BSO200N03S
Infineon Technologies

BSO200N03S

Sehemu ya hisa.: 232

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V,

Kwa wishlist.
BSO072N03S
Infineon Technologies

BSO072N03S

Sehemu ya hisa.: 276

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V,

Kwa wishlist.