Transistors - FETs, MOSFETs - Moja | Bidhaa tofauti za semiconductor | 100

BSP373 E6327

Sehemu ya hisa.: 119

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.7A, 10V,

Kwa wishlist.

Infineon Technologies

BSP324 E6327

Sehemu ya hisa.: 172

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 400V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 170mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 25 Ohm @ 170mA, 10V,

Kwa wishlist.

Infineon Technologies

BSP372 E6327

Sehemu ya hisa.: 155

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 310 mOhm @ 1.7A, 5V,

Kwa wishlist.

Infineon Technologies

BSP320S E6433

Sehemu ya hisa.: 110

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.9A, 10V,

Kwa wishlist.

Infineon Technologies

BSP320S E6327

Sehemu ya hisa.: 88

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.9A, 10V,

Kwa wishlist.

Infineon Technologies

BSP300L6327HUSA1

Sehemu ya hisa.: 138

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 190mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 20 Ohm @ 190mA, 10V,

Kwa wishlist.

Infineon Technologies

BSP318S E6327

Sehemu ya hisa.: 158

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V,

Kwa wishlist.

Infineon Technologies

BSP300 E6327

Sehemu ya hisa.: 95

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 190mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 20 Ohm @ 190mA, 10V,

Kwa wishlist.

Infineon Technologies

BSP299 E6327

Sehemu ya hisa.: 166

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 400mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 10V,

Kwa wishlist.

Infineon Technologies

BSP298 E6327

Sehemu ya hisa.: 6031

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 400V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 500mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V,

Kwa wishlist.

Infineon Technologies

BSP298L6327HUSA1

Sehemu ya hisa.: 5657

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 400V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 500mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V,

Kwa wishlist.

Infineon Technologies

BSP296 E6433

Sehemu ya hisa.: 127

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.1A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V,

Kwa wishlist.

Infineon Technologies

BSP297 E6327

Sehemu ya hisa.: 144

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 660mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V,

Kwa wishlist.

Infineon Technologies

BSP149 E6906

Sehemu ya hisa.: 78

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 660mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, 10V, Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V,

Kwa wishlist.

Infineon Technologies

BSP149L6906HTSA1

Sehemu ya hisa.: 6023

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 660mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, 10V, Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V,

Kwa wishlist.

Infineon Technologies

BSP149 E6327

Sehemu ya hisa.: 156

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 660mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, 10V, Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V,

Kwa wishlist.

Infineon Technologies

BSP135L6906HTSA1

Sehemu ya hisa.: 6085

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, 10V, Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V,

Kwa wishlist.

Infineon Technologies

BSP135L6327HTSA1

Sehemu ya hisa.: 106

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, 10V, Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V,

Kwa wishlist.

Infineon Technologies

BSP135 E6906

Sehemu ya hisa.: 6091

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, 10V, Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V,

Kwa wishlist.

Infineon Technologies

BSP135 E6327

Sehemu ya hisa.: 155

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, 10V, Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V,

Kwa wishlist.

Infineon Technologies

BSP129L6906HTSA1

Sehemu ya hisa.: 84

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 240V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 350mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V,

Kwa wishlist.

Infineon Technologies

BSP129L6327HTSA1

Sehemu ya hisa.: 124

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 240V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 350mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V,

Kwa wishlist.

Infineon Technologies

BSP125L6327HTSA1

Sehemu ya hisa.: 78

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V,

Kwa wishlist.

Infineon Technologies

BSP125 E6433

Sehemu ya hisa.: 112

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V,

Kwa wishlist.

Infineon Technologies

BSO613SPV

Sehemu ya hisa.: 84

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.44A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.44A, 10V,

Kwa wishlist.

Infineon Technologies

BSP125 E6327

Sehemu ya hisa.: 165

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V,

Kwa wishlist.

Infineon Technologies

BSO200P03SNTMA1

Sehemu ya hisa.: 88

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.1A, 10V,

Kwa wishlist.

Infineon Technologies

BSO130P03SNTMA1

Sehemu ya hisa.: 98

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.3A, 10V,

Kwa wishlist.

Infineon Technologies

BSO104N03S

Sehemu ya hisa.: 120

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 13A, 10V,

Kwa wishlist.

Infineon Technologies

BSC106N025S G

Sehemu ya hisa.: 139

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), 30A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 30A, 10V,

Kwa wishlist.

Infineon Technologies

BSO064N03S

Sehemu ya hisa.: 78

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 16A, 10V,

Kwa wishlist.

Infineon Technologies

BSC085N025S G

Sehemu ya hisa.: 101

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A (Ta), 35A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 35A, 10V,

Kwa wishlist.

Infineon Technologies

BSC072N025S G

Sehemu ya hisa.: 86

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15A (Ta), 40A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 40A, 10V,

Kwa wishlist.

Infineon Technologies

BSC052N03S G

Sehemu ya hisa.: 69

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18A (Ta), 80A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 50A, 10V,

Kwa wishlist.

Infineon Technologies

BSC032N03S

Sehemu ya hisa.: 141

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 23A (Ta), 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V,

Kwa wishlist.

Infineon Technologies

BSC037N025S G

Sehemu ya hisa.: 115

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 21A (Ta), 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 50A, 10V,

Kwa wishlist.