Transistors - FETs, MOSFETs - Moja

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Transistors - FETs, MOSFETs - Moja

EPC2001

Sehemu ya hisa.: 18487

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 25A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V,

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EPC2049ENGRT

Sehemu ya hisa.: 4397

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 5 mOhm @ 15A, 5V,

Wishlist.

EPC2021

Sehemu ya hisa.: 14286

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 90A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 29A, 5V,

Wishlist.

EPC2025

Sehemu ya hisa.: 1945

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 300V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 150 mOhm @ 3A, 5V,

Wishlist.

EPC2031

Sehemu ya hisa.: 8638

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 31A (Ta), Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 5V,

Wishlist.

EPC2018

Sehemu ya hisa.: 8926

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V,

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EPC2016

Sehemu ya hisa.: 50068

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 11A, 5V,

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EPC2051ENGRT

Sehemu ya hisa.: 10801

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.7A, Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 5V,

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EPC8004

Sehemu ya hisa.: 28614

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 5V,

Wishlist.

EPC8009

Sehemu ya hisa.: 27880

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 65V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 500mA, 5V,

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EPC2030ENGRT

Sehemu ya hisa.: 16295

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 31A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 30A, 5V,

Wishlist.

EPC2007

Sehemu ya hisa.: 69589

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 5V,

Wishlist.

EPC2015

Sehemu ya hisa.: 18703

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 33A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V,

Wishlist.

EPC2031ENGRT

Sehemu ya hisa.: 17048

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 31A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 5V,

Wishlist.

EPC2012

Sehemu ya hisa.: 54098

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V,

Wishlist.

EPC2010

Sehemu ya hisa.: 9929

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V,

Wishlist.

EPC2022

Sehemu ya hisa.: 14027

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 5V,

Wishlist.

EPC2024

Sehemu ya hisa.: 14687

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 37A, 5V,

Wishlist.

EPC2033

Sehemu ya hisa.: 13722

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 31A (Ta), Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V,

Wishlist.

EPC2032

Sehemu ya hisa.: 16483

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 48A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 5V,

Wishlist.

EPC2020

Sehemu ya hisa.: 14515

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 90A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 31A, 5V,

Wishlist.

EPC2029

Sehemu ya hisa.: 16856

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 48A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 5V,

Wishlist.

EPC2034

Sehemu ya hisa.: 7981

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 48A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 5V,

Wishlist.

EPC2035

Sehemu ya hisa.: 195456

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 45 mOhm @ 1A, 5V,

Wishlist.

EPC2023

Sehemu ya hisa.: 18953

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Ta), Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 40A, 5V,

Wishlist.

EPC2015C

Sehemu ya hisa.: 30169

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 53A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V,

Wishlist.

EPC2014

Sehemu ya hisa.: 74091

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 5V,

Wishlist.

EPC2030

Sehemu ya hisa.: 22960

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 31A (Ta), Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 30A, 5V,

Wishlist.

EPC8010

Sehemu ya hisa.: 46864

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 5V,

Wishlist.

EPC2045ENGRT

Sehemu ya hisa.: 26260

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 5V,

Wishlist.

EPC2010C

Sehemu ya hisa.: 17919

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 22A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 5V,

Wishlist.

EPC2012C

Sehemu ya hisa.: 54040

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V,

Wishlist.

EPC2001C

Sehemu ya hisa.: 31126

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 36A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V,

Wishlist.

EPC2202

Sehemu ya hisa.: 48425

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18A, Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 17 mOhm @ 11A, 5V,

Wishlist.

EPC2019

Sehemu ya hisa.: 37744

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 5V,

Wishlist.

EPC2007C

Sehemu ya hisa.: 74756

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 5V,

Wishlist.

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