Transistors - FETs, MOSFETs - Moja | Bidhaa tofauti za semiconductor | 2

EPC2203

Sehemu ya hisa.: 59185

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.7A, Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 80 mOhm @ 1A, 5V,

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EPC

EPC2014C

Sehemu ya hisa.: 107624

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 5V,

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EPC

EPC8002

Sehemu ya hisa.: 49093

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 65V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 530 mOhm @ 500mA, 5V,

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EPC

EPC2037

Sehemu ya hisa.: 128582

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 550 mOhm @ 100mA, 5V,

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EPC

EPC2040

Sehemu ya hisa.: 113264

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 15V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 30 mOhm @ 1.5A, 5V,

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EPC

EPC2039

Sehemu ya hisa.: 105727

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V,

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EPC

EPC2016C

Sehemu ya hisa.: 65843

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 16 mOhm @ 11A, 5V,

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EPC

EPC2038

Sehemu ya hisa.: 148654

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 500mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 50mA, 5V,

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EPC

EPC2036

Sehemu ya hisa.: 150786

Aina ya FET: N-Channel, Teknolojia: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 65 mOhm @ 1A, 5V,

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