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Transistors - Bipolar (BJT) - Safu, Kabla ya Upend

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  • Transistors - Bipolar (BJT) - Safu, Kabla ya Upend
SMUN5116DW1T1G
ON Semiconductor

SMUN5116DW1T1G

Sehemu ya hisa.: 119414

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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SMUN5211DW1T1G
ON Semiconductor

SMUN5211DW1T1G

Sehemu ya hisa.: 152766

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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NSVMUN5333DW1T3G
ON Semiconductor

NSVMUN5333DW1T3G

Sehemu ya hisa.: 107424

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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SMUN5232DW1T1G
ON Semiconductor

SMUN5232DW1T1G

Sehemu ya hisa.: 125478

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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EMG2DXV5T5G
ON Semiconductor

EMG2DXV5T5G

Sehemu ya hisa.: 175728

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSB4904DW1T1G
ON Semiconductor

NSB4904DW1T1G

Sehemu ya hisa.: 119540

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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SMUN5330DW1T1G
ON Semiconductor

SMUN5330DW1T1G

Sehemu ya hisa.: 197015

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 1 kOhms, Resistor - Msingi wa Emitter (R2): 1 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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MUN5235DW1T1G
ON Semiconductor

MUN5235DW1T1G

Sehemu ya hisa.: 143243

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSTB1002DXV5T1G
ON Semiconductor

NSTB1002DXV5T1G

Sehemu ya hisa.: 198611

Aina ya Transistor: 1 NPN Pre-Biased, 1 PNP, Mkusanyaji wa sasa (Ic) (Max): 100mA, 200mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, 40V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 100 @ 1mA, 10V,

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NSBA114TDP6T5G
ON Semiconductor

NSBA114TDP6T5G

Sehemu ya hisa.: 172501

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSVMUN5233DW1T3G
ON Semiconductor

NSVMUN5233DW1T3G

Sehemu ya hisa.: 143904

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5136DW1T1G
ON Semiconductor

MUN5136DW1T1G

Sehemu ya hisa.: 137681

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 100 kOhms, Resistor - Msingi wa Emitter (R2): 100 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVIMD10AMT1G
ON Semiconductor

NSVIMD10AMT1G

Sehemu ya hisa.: 27

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 500mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 13 kOhms, 130 Ohms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V,

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NSVMUN5111DW1T3G
ON Semiconductor

NSVMUN5111DW1T3G

Sehemu ya hisa.: 166215

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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NSVBC124EPDXV6T1G
ON Semiconductor

NSVBC124EPDXV6T1G

Sehemu ya hisa.: 133

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSVMUN5314DW1T3G
ON Semiconductor

NSVMUN5314DW1T3G

Sehemu ya hisa.: 172202

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBA124XDXV6T1G
ON Semiconductor

NSBA124XDXV6T1G

Sehemu ya hisa.: 140822

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC114TDXV6T1G
ON Semiconductor

NSBC114TDXV6T1G

Sehemu ya hisa.: 164848

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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MUN5132DW1T1G
ON Semiconductor

MUN5132DW1T1G

Sehemu ya hisa.: 128735

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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NSVBC114EDXV6T1G
ON Semiconductor

NSVBC114EDXV6T1G

Sehemu ya hisa.: 179563

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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SMUN5311DW1T2G
ON Semiconductor

SMUN5311DW1T2G

Sehemu ya hisa.: 124246

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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NSVMUN5312DW1T3G
ON Semiconductor

NSVMUN5312DW1T3G

Sehemu ya hisa.: 121655

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSVMUN5211DW1T2G
ON Semiconductor

NSVMUN5211DW1T2G

Sehemu ya hisa.: 121426

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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IMH20TR1G
ON Semiconductor

IMH20TR1G

Sehemu ya hisa.: 119987

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 600mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 15V, Kizuizi - Msingi (R1): 2.2 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V,

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NSBC144EDXV6T5G
ON Semiconductor

NSBC144EDXV6T5G

Sehemu ya hisa.: 180837

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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EMC2DXV5T1G
ON Semiconductor

EMC2DXV5T1G

Sehemu ya hisa.: 188232

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSVBC124XPDXV6T1G
ON Semiconductor

NSVBC124XPDXV6T1G

Sehemu ya hisa.: 173078

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVB1706DMW5T1G
ON Semiconductor

NSVB1706DMW5T1G

Sehemu ya hisa.: 192009

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC144WDP6T5G
ON Semiconductor

NSBC144WDP6T5G

Sehemu ya hisa.: 114076

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5116DW1T1G
ON Semiconductor

MUN5116DW1T1G

Sehemu ya hisa.: 183614

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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MUN5314DW1T1G
ON Semiconductor

MUN5314DW1T1G

Sehemu ya hisa.: 187882

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVMUN5214DW1T3G
ON Semiconductor

NSVMUN5214DW1T3G

Sehemu ya hisa.: 125398

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVMUN5331DW1T1G
ON Semiconductor

NSVMUN5331DW1T1G

Sehemu ya hisa.: 187285

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 2.2 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V,

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NSBA144WDP6T5G
ON Semiconductor

NSBA144WDP6T5G

Sehemu ya hisa.: 115037

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBA123JDXV6T1
ON Semiconductor

NSBA123JDXV6T1

Sehemu ya hisa.: 1409

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBA123TDP6T5G
ON Semiconductor

NSBA123TDP6T5G

Sehemu ya hisa.: 110663

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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