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Transistors - Bipolar (BJT) - Safu, Kabla ya Upend

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  • Transistors - Bipolar (BJT) - Safu, Kabla ya Upend
NSBA124EDXV6T1
ON Semiconductor

NSBA124EDXV6T1

Sehemu ya hisa.: 1456

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSBC144EPDXV6T5
ON Semiconductor

NSBC144EPDXV6T5

Sehemu ya hisa.: 1405

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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EMG2DXV5T5
ON Semiconductor

EMG2DXV5T5

Sehemu ya hisa.: 3242

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC115EDXV6T1G
ON Semiconductor

NSBC115EDXV6T1G

Sehemu ya hisa.: 129082

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 100 kOhms, Resistor - Msingi wa Emitter (R2): 100 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVMUN5316DW1T1G
ON Semiconductor

NSVMUN5316DW1T1G

Sehemu ya hisa.: 160200

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSB1706DMW5T1G
ON Semiconductor

NSB1706DMW5T1G

Sehemu ya hisa.: 136591

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5133DW1T1G
ON Semiconductor

MUN5133DW1T1G

Sehemu ya hisa.: 183679

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5316DW1T1
ON Semiconductor

MUN5316DW1T1

Sehemu ya hisa.: 1532

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSM21156DW6T1G
ON Semiconductor

NSM21156DW6T1G

Sehemu ya hisa.: 1463

Aina ya Transistor: 1 NPN Pre-Biased, 1 PNP, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, 65V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 220 @ 2mA, 5V,

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MUN5130DW1T1G
ON Semiconductor

MUN5130DW1T1G

Sehemu ya hisa.: 181618

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 1 kOhms, Resistor - Msingi wa Emitter (R2): 1 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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MUN5230DW1T1G
ON Semiconductor

MUN5230DW1T1G

Sehemu ya hisa.: 155743

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 1 kOhms, Resistor - Msingi wa Emitter (R2): 1 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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NSTB1004DXV5T1G
ON Semiconductor

NSTB1004DXV5T1G

Sehemu ya hisa.: 3211

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual),

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NSBC114YPDP6T5G
ON Semiconductor

NSBC114YPDP6T5G

Sehemu ya hisa.: 167686

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5230DW1T1
ON Semiconductor

MUN5230DW1T1

Sehemu ya hisa.: 1467

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 1 kOhms, Resistor - Msingi wa Emitter (R2): 1 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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MUN5136DW1T1
ON Semiconductor

MUN5136DW1T1

Sehemu ya hisa.: 1413

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 100 kOhms, Resistor - Msingi wa Emitter (R2): 100 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UMA4NT1G
ON Semiconductor

UMA4NT1G

Sehemu ya hisa.: 1478

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSBA123EDXV6T1G
ON Semiconductor

NSBA123EDXV6T1G

Sehemu ya hisa.: 64095

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 2.2 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V,

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SMUN5214DW1T1G
ON Semiconductor

SMUN5214DW1T1G

Sehemu ya hisa.: 115714

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVBC114YPDXV65G
ON Semiconductor

NSVBC114YPDXV65G

Sehemu ya hisa.: 1485

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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SMUN5230DW1T1G
ON Semiconductor

SMUN5230DW1T1G

Sehemu ya hisa.: 174998

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 1 kOhms, Resistor - Msingi wa Emitter (R2): 1 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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SMUN5131DW1T1G
ON Semiconductor

SMUN5131DW1T1G

Sehemu ya hisa.: 110079

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 2.2 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V,

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NSBA144EDP6T5G
ON Semiconductor

NSBA144EDP6T5G

Sehemu ya hisa.: 162633

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5137DW1T1G
ON Semiconductor

MUN5137DW1T1G

Sehemu ya hisa.: 3198

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5315DW1T1G
ON Semiconductor

MUN5315DW1T1G

Sehemu ya hisa.: 150495

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSBC123EDXV6T1
ON Semiconductor

NSBC123EDXV6T1

Sehemu ya hisa.: 1458

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 2.2 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V,

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MUN5212DW1T1
ON Semiconductor

MUN5212DW1T1

Sehemu ya hisa.: 1497

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSBC124EPDXV6T1G
ON Semiconductor

NSBC124EPDXV6T1G

Sehemu ya hisa.: 188714

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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EMC5DXV5T1G
ON Semiconductor

EMC5DXV5T1G

Sehemu ya hisa.: 130128

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V,

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NSVB123JPDXV6T1G
ON Semiconductor

NSVB123JPDXV6T1G

Sehemu ya hisa.: 107622

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBA115TDP6T5G
ON Semiconductor

NSBA115TDP6T5G

Sehemu ya hisa.: 146030

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 100 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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MUN5232DW1T1
ON Semiconductor

MUN5232DW1T1

Sehemu ya hisa.: 1444

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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NSBC123JPDXV6T1
ON Semiconductor

NSBC123JPDXV6T1

Sehemu ya hisa.: 1461

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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EMD5DXV6T5G
ON Semiconductor

EMD5DXV6T5G

Sehemu ya hisa.: 162821

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, 47 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V,

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NSBA114YDP6T5G
ON Semiconductor

NSBA114YDP6T5G

Sehemu ya hisa.: 197883

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVUMC2NT1G
ON Semiconductor

NSVUMC2NT1G

Sehemu ya hisa.: 193262

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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SMUN5235DW1T3G
ON Semiconductor

SMUN5235DW1T3G

Sehemu ya hisa.: 170254

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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