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Transistors - Bipolar (BJT) - Safu, Kabla ya Upend

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  • Transistors - Bipolar (BJT) - Safu, Kabla ya Upend
NSBC143TPDXV6T5G
ON Semiconductor

NSBC143TPDXV6T5G

Sehemu ya hisa.: 1450

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSVB143ZPDXV6T1G
ON Semiconductor

NSVB143ZPDXV6T1G

Sehemu ya hisa.: 196250

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBA114EDXV6T5
ON Semiconductor

NSBA114EDXV6T5

Sehemu ya hisa.: 1412

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

Wishlist.
NSBA114EDP6T5G
ON Semiconductor

NSBA114EDP6T5G

Sehemu ya hisa.: 120046

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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MUN5311DW1T2G
ON Semiconductor

MUN5311DW1T2G

Sehemu ya hisa.: 169851

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

Wishlist.
NSBC124XDXV6T1G
ON Semiconductor

NSBC124XDXV6T1G

Sehemu ya hisa.: 13291

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wishlist.
NSBC143EDP6T5G
ON Semiconductor

NSBC143EDP6T5G

Sehemu ya hisa.: 175541

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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NSBA143ZDXV6T5G
ON Semiconductor

NSBA143ZDXV6T5G

Sehemu ya hisa.: 1440

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wishlist.
NSM46211DW6T1G
ON Semiconductor

NSM46211DW6T1G

Sehemu ya hisa.: 1520

Aina ya Transistor: 1 NPN Pre-Biased, 1 NPN, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, 65V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 200 @ 2mA, 5V,

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SMUN5314DW1T1G
ON Semiconductor

SMUN5314DW1T1G

Sehemu ya hisa.: 107762

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC114YDXV6T1
ON Semiconductor

NSBC114YDXV6T1

Sehemu ya hisa.: 1455

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVMUN5332DW1T3G
ON Semiconductor

NSVMUN5332DW1T3G

Sehemu ya hisa.: 126748

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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NSBA114TDXV6T5
ON Semiconductor

NSBA114TDXV6T5

Sehemu ya hisa.: 1453

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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MUN5216DW1T1G
ON Semiconductor

MUN5216DW1T1G

Sehemu ya hisa.: 145375

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSBC124EPDP6T5G
ON Semiconductor

NSBC124EPDP6T5G

Sehemu ya hisa.: 102255

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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MUN5216DW1T1
ON Semiconductor

MUN5216DW1T1

Sehemu ya hisa.: 1438

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

Wishlist.
NSBC143ZPDXV6T1G
ON Semiconductor

NSBC143ZPDXV6T1G

Sehemu ya hisa.: 154023

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wishlist.
NSBC123JDXV6T5
ON Semiconductor

NSBC123JDXV6T5

Sehemu ya hisa.: 1465

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wishlist.
NSVB124XPDXV6T1G
ON Semiconductor

NSVB124XPDXV6T1G

Sehemu ya hisa.: 133175

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wishlist.
NSBA113EDXV6T1G
ON Semiconductor

NSBA113EDXV6T1G

Sehemu ya hisa.: 168681

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 1 kOhms, Resistor - Msingi wa Emitter (R2): 1 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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MUN5113DW1T1G
ON Semiconductor

MUN5113DW1T1G

Sehemu ya hisa.: 163385

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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EMC5DXV5T1
ON Semiconductor

EMC5DXV5T1

Sehemu ya hisa.: 3198

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V,

Wishlist.
SMUN5315DW1T1G
ON Semiconductor

SMUN5315DW1T1G

Sehemu ya hisa.: 151022

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5111DW1T1G
ON Semiconductor

MUN5111DW1T1G

Sehemu ya hisa.: 182502

Aina ya Transistor: 2 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

Wishlist.
NSBC114YDXV6T5G
ON Semiconductor

NSBC114YDXV6T5G

Sehemu ya hisa.: 152242

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wishlist.
NSBC114EPDXV6T1
ON Semiconductor

NSBC114EPDXV6T1

Sehemu ya hisa.: 1506

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

Wishlist.
NSBC144EPDXV6T5G
ON Semiconductor

NSBC144EPDXV6T5G

Sehemu ya hisa.: 158937

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wishlist.
NSM21356DW6T1G
ON Semiconductor

NSM21356DW6T1G

Sehemu ya hisa.: 1509

Aina ya Transistor: 1 NPN Pre-Biased, 1 PNP, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, 65V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 220 @ 2mA, 5V,

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UMC3NT1G
ON Semiconductor

UMC3NT1G

Sehemu ya hisa.: 190376

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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SMUN5237DW1T1G
ON Semiconductor

SMUN5237DW1T1G

Sehemu ya hisa.: 103555

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC114EDXV6T1G
ON Semiconductor

NSBC114EDXV6T1G

Sehemu ya hisa.: 136254

Aina ya Transistor: 2 NPN - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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IMD10AMT1G
ON Semiconductor

IMD10AMT1G

Sehemu ya hisa.: 131028

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 500mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 13 kOhms, 130 Ohms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V,

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EMF18XV6T5G
ON Semiconductor

EMF18XV6T5G

Sehemu ya hisa.: 145445

Aina ya Transistor: 1 NPN Pre-Biased, 1 PNP, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, 60V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 1mA, 6V,

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NSVMUN5333DW1T1G
ON Semiconductor

NSVMUN5333DW1T1G

Sehemu ya hisa.: 176542

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5336DW1T1G
ON Semiconductor

MUN5336DW1T1G

Sehemu ya hisa.: 115654

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 100 kOhms, Resistor - Msingi wa Emitter (R2): 100 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wishlist.
NSBC114EPDXV6T5G
ON Semiconductor

NSBC114EPDXV6T5G

Sehemu ya hisa.: 179087

Aina ya Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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