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Diode - Zener - Moja

BZT52B8V2S RRG
Taiwan Semiconductor Corporation

BZT52B8V2S RRG

Sehemu ya hisa.: 179

Voltage - Zener (Nom) (Vz): 8.2V, Uvumilivu: ±2%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 15 Ohms, Sasa - Reverse Leakage @ Vr: 630nA @ 5V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C11K RKG
Taiwan Semiconductor Corporation

BZT52C11K RKG

Sehemu ya hisa.: 228

Voltage - Zener (Nom) (Vz): 11V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 20 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 8V,

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BZT52C3V9K RKG
Taiwan Semiconductor Corporation

BZT52C3V9K RKG

Sehemu ya hisa.: 250

Voltage - Zener (Nom) (Vz): 3.9V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 90 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 1V,

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BZT52C33-G RHG
Taiwan Semiconductor Corporation

BZT52C33-G RHG

Sehemu ya hisa.: 173

Voltage - Zener (Nom) (Vz): 33V, Uvumilivu: ±5%, Nguvu - Max: 350mW, Impedance (Max) (Zzt): 80 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 23.1V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52C3V6S RRG
Taiwan Semiconductor Corporation

BZT52C3V6S RRG

Sehemu ya hisa.: 230

Voltage - Zener (Nom) (Vz): 3.6V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 90 Ohms, Sasa - Reverse Leakage @ Vr: 4.5µA @ 1V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52B36 RHG
Taiwan Semiconductor Corporation

BZT52B36 RHG

Sehemu ya hisa.: 260

Voltage - Zener (Nom) (Vz): 36V, Uvumilivu: ±2%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 90 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 25.2V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C36-G RHG
Taiwan Semiconductor Corporation

BZT52C36-G RHG

Sehemu ya hisa.: 223

Voltage - Zener (Nom) (Vz): 36V, Uvumilivu: ±5%, Nguvu - Max: 350mW, Impedance (Max) (Zzt): 90 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 25.2V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52B24S RRG
Taiwan Semiconductor Corporation

BZT52B24S RRG

Sehemu ya hisa.: 167

Voltage - Zener (Nom) (Vz): 24V, Uvumilivu: ±2%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 70 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 16.8V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52B4V7 RHG
Taiwan Semiconductor Corporation

BZT52B4V7 RHG

Sehemu ya hisa.: 199

Voltage - Zener (Nom) (Vz): 4.7V, Uvumilivu: ±2%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 80 Ohms, Sasa - Reverse Leakage @ Vr: 2.7µA @ 2V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C18 RHG
Taiwan Semiconductor Corporation

BZT52C18 RHG

Sehemu ya hisa.: 259

Voltage - Zener (Nom) (Vz): 18V, Uvumilivu: ±5%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 45 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 12.6V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52B36S RRG
Taiwan Semiconductor Corporation

BZT52B36S RRG

Sehemu ya hisa.: 225

Voltage - Zener (Nom) (Vz): 36V, Uvumilivu: ±2%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 90 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 25.2V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52B22S RRG
Taiwan Semiconductor Corporation

BZT52B22S RRG

Sehemu ya hisa.: 184

Voltage - Zener (Nom) (Vz): 22V, Uvumilivu: ±2%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 55 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 15.4V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C13S RRG
Taiwan Semiconductor Corporation

BZT52C13S RRG

Sehemu ya hisa.: 206

Voltage - Zener (Nom) (Vz): 13V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 30 Ohms, Sasa - Reverse Leakage @ Vr: 90nA @ 8V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C16K RKG
Taiwan Semiconductor Corporation

BZT52C16K RKG

Sehemu ya hisa.: 265

Voltage - Zener (Nom) (Vz): 16V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 40 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 12V,

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BZT52C7V5K RKG
Taiwan Semiconductor Corporation

BZT52C7V5K RKG

Sehemu ya hisa.: 192

Voltage - Zener (Nom) (Vz): 7.5V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 15 Ohms, Sasa - Reverse Leakage @ Vr: 500nA @ 4V,

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BZT52C9V1S RRG
Taiwan Semiconductor Corporation

BZT52C9V1S RRG

Sehemu ya hisa.: 253

Voltage - Zener (Nom) (Vz): 9.1V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 15 Ohms, Sasa - Reverse Leakage @ Vr: 450nA @ 6V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C2V7-G RHG
Taiwan Semiconductor Corporation

BZT52C2V7-G RHG

Sehemu ya hisa.: 259

Voltage - Zener (Nom) (Vz): 2.7V, Uvumilivu: ±5%, Nguvu - Max: 350mW, Impedance (Max) (Zzt): 100 Ohms, Sasa - Reverse Leakage @ Vr: 20µA @ 1V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52B56 RHG
Taiwan Semiconductor Corporation

BZT52B56 RHG

Sehemu ya hisa.: 252

Voltage - Zener (Nom) (Vz): 56V, Uvumilivu: ±2%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 200 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 39.2V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52B13-G RHG
Taiwan Semiconductor Corporation

BZT52B13-G RHG

Sehemu ya hisa.: 201

Voltage - Zener (Nom) (Vz): 13V, Uvumilivu: ±2%, Nguvu - Max: 410mW, Impedance (Max) (Zzt): 30 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 8V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52C3V3 RHG
Taiwan Semiconductor Corporation

BZT52C3V3 RHG

Sehemu ya hisa.: 264

Voltage - Zener (Nom) (Vz): 3.3V, Uvumilivu: ±5%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 95 Ohms, Sasa - Reverse Leakage @ Vr: 4.5µA @ 1V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C47K RKG
Taiwan Semiconductor Corporation

BZT52C47K RKG

Sehemu ya hisa.: 226

Voltage - Zener (Nom) (Vz): 47V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 170 Ohms, Sasa - Reverse Leakage @ Vr: 2µA @ 36V,

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BZT52C27K RKG
Taiwan Semiconductor Corporation

BZT52C27K RKG

Sehemu ya hisa.: 215

Voltage - Zener (Nom) (Vz): 27V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 80 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 21V,

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BZT52C22 RHG
Taiwan Semiconductor Corporation

BZT52C22 RHG

Sehemu ya hisa.: 205

Voltage - Zener (Nom) (Vz): 22V, Uvumilivu: ±5%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 55 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 15.4V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C24 RHG
Taiwan Semiconductor Corporation

BZT52C24 RHG

Sehemu ya hisa.: 211

Voltage - Zener (Nom) (Vz): 24V, Uvumilivu: ±5%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 70 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 16.8V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52B12-G RHG
Taiwan Semiconductor Corporation

BZT52B12-G RHG

Sehemu ya hisa.: 190

Voltage - Zener (Nom) (Vz): 12V, Uvumilivu: ±2%, Nguvu - Max: 410mW, Impedance (Max) (Zzt): 25 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 8V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52C3V3K RKG
Taiwan Semiconductor Corporation

BZT52C3V3K RKG

Sehemu ya hisa.: 256

Voltage - Zener (Nom) (Vz): 3.3V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 95 Ohms, Sasa - Reverse Leakage @ Vr: 20µA @ 1V,

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BZT52C13 RHG
Taiwan Semiconductor Corporation

BZT52C13 RHG

Sehemu ya hisa.: 182

Voltage - Zener (Nom) (Vz): 13V, Uvumilivu: ±5%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 30 Ohms, Sasa - Reverse Leakage @ Vr: 90nA @ 8V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C56 RHG
Taiwan Semiconductor Corporation

BZT52C56 RHG

Sehemu ya hisa.: 180

Voltage - Zener (Nom) (Vz): 56V, Uvumilivu: ±5%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 200 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 39.2V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C4V3S RRG
Taiwan Semiconductor Corporation

BZT52C4V3S RRG

Sehemu ya hisa.: 194

Voltage - Zener (Nom) (Vz): 4.3V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 90 Ohms, Sasa - Reverse Leakage @ Vr: 2.7µA @ 1V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZX84C24 RFG
Taiwan Semiconductor Corporation

BZX84C24 RFG

Sehemu ya hisa.: 227

Voltage - Zener (Nom) (Vz): 24V, Uvumilivu: ±5%, Nguvu - Max: 300mW, Impedance (Max) (Zzt): 70 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 16.8V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52B20 RHG
Taiwan Semiconductor Corporation

BZT52B20 RHG

Sehemu ya hisa.: 213

Voltage - Zener (Nom) (Vz): 20V, Uvumilivu: ±2%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 55 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 14V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52B5V1S RRG
Taiwan Semiconductor Corporation

BZT52B5V1S RRG

Sehemu ya hisa.: 251

Voltage - Zener (Nom) (Vz): 5.1V, Uvumilivu: ±2%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 60 Ohms, Sasa - Reverse Leakage @ Vr: 1.8µA @ 2V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C20 RHG
Taiwan Semiconductor Corporation

BZT52C20 RHG

Sehemu ya hisa.: 179

Voltage - Zener (Nom) (Vz): 20V, Uvumilivu: ±5%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 55 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 14V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C8V2-G RHG
Taiwan Semiconductor Corporation

BZT52C8V2-G RHG

Sehemu ya hisa.: 221

Voltage - Zener (Nom) (Vz): 8.2V, Uvumilivu: ±5%, Nguvu - Max: 350mW, Impedance (Max) (Zzt): 15 Ohms, Sasa - Reverse Leakage @ Vr: 700nA @ 5V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52B2V7 RHG
Taiwan Semiconductor Corporation

BZT52B2V7 RHG

Sehemu ya hisa.: 215

Voltage - Zener (Nom) (Vz): 2.7V, Uvumilivu: ±2%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 100 Ohms, Sasa - Reverse Leakage @ Vr: 18µA @ 1V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZX84C8V2 RFG
Taiwan Semiconductor Corporation

BZX84C8V2 RFG

Sehemu ya hisa.: 265

Voltage - Zener (Nom) (Vz): 8.2V, Uvumilivu: ±5%, Nguvu - Max: 300mW, Impedance (Max) (Zzt): 15 Ohms, Sasa - Reverse Leakage @ Vr: 700nA @ 5V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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