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Diode - Zener - Moja

BZT52B7V5-G RHG
Taiwan Semiconductor Corporation

BZT52B7V5-G RHG

Sehemu ya hisa.: 200

Voltage - Zener (Nom) (Vz): 7.5V, Uvumilivu: ±2%, Nguvu - Max: 410mW, Impedance (Max) (Zzt): 15 Ohms, Sasa - Reverse Leakage @ Vr: 1µA @ 5V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52C10K RKG
Taiwan Semiconductor Corporation

BZT52C10K RKG

Sehemu ya hisa.: 189

Voltage - Zener (Nom) (Vz): 10V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 20 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 7V,

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BZT52B30S RRG
Taiwan Semiconductor Corporation

BZT52B30S RRG

Sehemu ya hisa.: 262

Voltage - Zener (Nom) (Vz): 30V, Uvumilivu: ±2%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 80 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 21V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZX84C6V2 RFG
Taiwan Semiconductor Corporation

BZX84C6V2 RFG

Sehemu ya hisa.: 191

Voltage - Zener (Nom) (Vz): 6.2V, Uvumilivu: ±5%, Nguvu - Max: 300mW, Impedance (Max) (Zzt): 10 Ohms, Sasa - Reverse Leakage @ Vr: 3µA @ 4V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52C16 RHG
Taiwan Semiconductor Corporation

BZT52C16 RHG

Sehemu ya hisa.: 215

Voltage - Zener (Nom) (Vz): 16V, Uvumilivu: ±5%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 40 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 11.2V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52B6V8 RHG
Taiwan Semiconductor Corporation

BZT52B6V8 RHG

Sehemu ya hisa.: 178

Voltage - Zener (Nom) (Vz): 6.8V, Uvumilivu: ±2%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 15 Ohms, Sasa - Reverse Leakage @ Vr: 1.8µA @ 4V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52B51S RRG
Taiwan Semiconductor Corporation

BZT52B51S RRG

Sehemu ya hisa.: 169

Voltage - Zener (Nom) (Vz): 51V, Uvumilivu: ±2%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 180 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 35.7V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C75S RRG
Taiwan Semiconductor Corporation

BZT52C75S RRG

Sehemu ya hisa.: 261

Voltage - Zener (Nom) (Vz): 75V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 255 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 52.5V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZX584B9V1 RSG
Taiwan Semiconductor Corporation

BZX584B9V1 RSG

Sehemu ya hisa.: 212

Voltage - Zener (Nom) (Vz): 9.1V, Uvumilivu: ±2%, Nguvu - Max: 150mW, Impedance (Max) (Zzt): 15 Ohms, Sasa - Reverse Leakage @ Vr: 500nA @ 6V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52C56K RKG
Taiwan Semiconductor Corporation

BZT52C56K RKG

Sehemu ya hisa.: 211

Voltage - Zener (Nom) (Vz): 56V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 200 Ohms, Sasa - Reverse Leakage @ Vr: 1µA @ 43V,

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BZT52B43-G RHG
Taiwan Semiconductor Corporation

BZT52B43-G RHG

Sehemu ya hisa.: 175

Voltage - Zener (Nom) (Vz): 43V, Uvumilivu: ±2%, Nguvu - Max: 410mW, Impedance (Max) (Zzt): 130 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 29.4V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52C36 RHG
Taiwan Semiconductor Corporation

BZT52C36 RHG

Sehemu ya hisa.: 228

Voltage - Zener (Nom) (Vz): 36V, Uvumilivu: ±5%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 90 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 25.2V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52B27-G RHG
Taiwan Semiconductor Corporation

BZT52B27-G RHG

Sehemu ya hisa.: 203

Voltage - Zener (Nom) (Vz): 27V, Uvumilivu: ±2%, Nguvu - Max: 410mW, Impedance (Max) (Zzt): 80 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 18.9V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52B24 RHG
Taiwan Semiconductor Corporation

BZT52B24 RHG

Sehemu ya hisa.: 198

Voltage - Zener (Nom) (Vz): 24V, Uvumilivu: ±2%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 70 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 16.8V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C5V6S RRG
Taiwan Semiconductor Corporation

BZT52C5V6S RRG

Sehemu ya hisa.: 266

Voltage - Zener (Nom) (Vz): 5.6V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 40 Ohms, Sasa - Reverse Leakage @ Vr: 900nA @ 2V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C5V1K RKG
Taiwan Semiconductor Corporation

BZT52C5V1K RKG

Sehemu ya hisa.: 181

Voltage - Zener (Nom) (Vz): 5.1V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 60 Ohms, Sasa - Reverse Leakage @ Vr: 2µA @ 1.5V,

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BZT52B13S RRG
Taiwan Semiconductor Corporation

BZT52B13S RRG

Sehemu ya hisa.: 169

Voltage - Zener (Nom) (Vz): 13V, Uvumilivu: ±2%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 30 Ohms, Sasa - Reverse Leakage @ Vr: 90nA @ 8V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52B4V3 RHG
Taiwan Semiconductor Corporation

BZT52B4V3 RHG

Sehemu ya hisa.: 207

Voltage - Zener (Nom) (Vz): 4.3V, Uvumilivu: ±2%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 90 Ohms, Sasa - Reverse Leakage @ Vr: 2.7µA @ 1V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C22S RRG
Taiwan Semiconductor Corporation

BZT52C22S RRG

Sehemu ya hisa.: 189

Voltage - Zener (Nom) (Vz): 22V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 55 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 15.4V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZX84C39 RFG
Taiwan Semiconductor Corporation

BZX84C39 RFG

Sehemu ya hisa.: 187

Voltage - Zener (Nom) (Vz): 39V, Uvumilivu: ±5%, Nguvu - Max: 300mW, Impedance (Max) (Zzt): 130 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 27.3V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52B3V6S RRG
Taiwan Semiconductor Corporation

BZT52B3V6S RRG

Sehemu ya hisa.: 230

Voltage - Zener (Nom) (Vz): 3.6V, Uvumilivu: ±2%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 90 Ohms, Sasa - Reverse Leakage @ Vr: 4.5µA @ 1V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C12-G RHG
Taiwan Semiconductor Corporation

BZT52C12-G RHG

Sehemu ya hisa.: 180

Voltage - Zener (Nom) (Vz): 12V, Uvumilivu: ±5%, Nguvu - Max: 350mW, Impedance (Max) (Zzt): 25 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 8V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52C33S RRG
Taiwan Semiconductor Corporation

BZT52C33S RRG

Sehemu ya hisa.: 266

Voltage - Zener (Nom) (Vz): 33V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 80 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 23V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZX84C33 RFG
Taiwan Semiconductor Corporation

BZX84C33 RFG

Sehemu ya hisa.: 219

Voltage - Zener (Nom) (Vz): 33V, Uvumilivu: ±5%, Nguvu - Max: 300mW, Impedance (Max) (Zzt): 80 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 23.1V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZX84C3V9 RFG
Taiwan Semiconductor Corporation

BZX84C3V9 RFG

Sehemu ya hisa.: 223

Voltage - Zener (Nom) (Vz): 3.9V, Uvumilivu: ±5%, Nguvu - Max: 300mW, Impedance (Max) (Zzt): 90 Ohms, Sasa - Reverse Leakage @ Vr: 3µA @ 1V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52B16S RRG
Taiwan Semiconductor Corporation

BZT52B16S RRG

Sehemu ya hisa.: 180

Voltage - Zener (Nom) (Vz): 16V, Uvumilivu: ±2%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 40 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 11.2V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52B5V1-G RHG
Taiwan Semiconductor Corporation

BZT52B5V1-G RHG

Sehemu ya hisa.: 175

Voltage - Zener (Nom) (Vz): 5.1V, Uvumilivu: ±2%, Nguvu - Max: 410mW, Impedance (Max) (Zzt): 60 Ohms, Sasa - Reverse Leakage @ Vr: 2µA @ 2V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52B27S RRG
Taiwan Semiconductor Corporation

BZT52B27S RRG

Sehemu ya hisa.: 178

Voltage - Zener (Nom) (Vz): 27V, Uvumilivu: ±2%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 80 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 18.9V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C43S RRG
Taiwan Semiconductor Corporation

BZT52C43S RRG

Sehemu ya hisa.: 259

Voltage - Zener (Nom) (Vz): 43V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 150 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 30.1V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52B15-G RHG
Taiwan Semiconductor Corporation

BZT52B15-G RHG

Sehemu ya hisa.: 214

Voltage - Zener (Nom) (Vz): 15V, Uvumilivu: ±2%, Nguvu - Max: 410mW, Impedance (Max) (Zzt): 30 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 10.5V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52C24-G RHG
Taiwan Semiconductor Corporation

BZT52C24-G RHG

Sehemu ya hisa.: 183

Voltage - Zener (Nom) (Vz): 24V, Uvumilivu: ±5%, Nguvu - Max: 350mW, Impedance (Max) (Zzt): 70 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 16.8V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52C27-G RHG
Taiwan Semiconductor Corporation

BZT52C27-G RHG

Sehemu ya hisa.: 198

Voltage - Zener (Nom) (Vz): 27V, Uvumilivu: ±5%, Nguvu - Max: 350mW, Impedance (Max) (Zzt): 80 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 18.9V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52B43S RRG
Taiwan Semiconductor Corporation

BZT52B43S RRG

Sehemu ya hisa.: 167

Voltage - Zener (Nom) (Vz): 43V, Uvumilivu: ±2%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 150 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 30.1V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C4V7 RHG
Taiwan Semiconductor Corporation

BZT52C4V7 RHG

Sehemu ya hisa.: 174

Voltage - Zener (Nom) (Vz): 4.7V, Uvumilivu: ±5%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 80 Ohms, Sasa - Reverse Leakage @ Vr: 2.7µA @ 2V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C3V9 RHG
Taiwan Semiconductor Corporation

BZT52C3V9 RHG

Sehemu ya hisa.: 205

Voltage - Zener (Nom) (Vz): 3.9V, Uvumilivu: ±5%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 90 Ohms, Sasa - Reverse Leakage @ Vr: 2.7µA @ 1V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C2V7 RHG
Taiwan Semiconductor Corporation

BZT52C2V7 RHG

Sehemu ya hisa.: 185

Voltage - Zener (Nom) (Vz): 2.7V, Uvumilivu: ±5%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 100 Ohms, Sasa - Reverse Leakage @ Vr: 18µA @ 1V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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