Diode - Warekebishaji - Moja | Bidhaa tofauti za semiconductor | 100

SK55C V7G

Sehemu ya hisa.: 120

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 750mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ES2CHR5G

Sehemu ya hisa.: 53

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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Taiwan Semiconductor Corporation

SK15B M4G

Sehemu ya hisa.: 64

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 750mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

HS2DA M2G

Sehemu ya hisa.: 77

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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Taiwan Semiconductor Corporation

SK35BHM4G

Sehemu ya hisa.: 91

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 750mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SK85C V6G

Sehemu ya hisa.: 139

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

S2BA R3G

Sehemu ya hisa.: 51

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1.5A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.5µs,

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Taiwan Semiconductor Corporation

SK25A M2G

Sehemu ya hisa.: 106

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SK55BHM4G

Sehemu ya hisa.: 51

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 750mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

S1GBHM4G

Sehemu ya hisa.: 133

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

S10KC V6G

Sehemu ya hisa.: 140

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 10A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SS310 V6G

Sehemu ya hisa.: 138

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

RS1AHR3G

Sehemu ya hisa.: 125

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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Taiwan Semiconductor Corporation

SK310BHM4G

Sehemu ya hisa.: 143

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SK520C V6G

Sehemu ya hisa.: 80

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ES2GAHR3G

Sehemu ya hisa.: 48

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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Taiwan Semiconductor Corporation

RS2M M4G

Sehemu ya hisa.: 85

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 500ns,

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Taiwan Semiconductor Corporation

ESH3D V6G

Sehemu ya hisa.: 111

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 20ns,

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Taiwan Semiconductor Corporation

SSL13HR3G

Sehemu ya hisa.: 118

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 390mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

S2K M4G

Sehemu ya hisa.: 87

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 2A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.5µs,

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Taiwan Semiconductor Corporation

SK53C V6G

Sehemu ya hisa.: 84

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ESH3C V7G

Sehemu ya hisa.: 131

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 20ns,

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Taiwan Semiconductor Corporation

ESH2CA M2G

Sehemu ya hisa.: 125

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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Taiwan Semiconductor Corporation

S8MC V6G

Sehemu ya hisa.: 80

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 8A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

S10MC V6G

Sehemu ya hisa.: 99

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 10A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ES2BA M2G

Sehemu ya hisa.: 88

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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Taiwan Semiconductor Corporation

SK310AHM2G

Sehemu ya hisa.: 137

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ES1JF R2G

Sehemu ya hisa.: 136

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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Taiwan Semiconductor Corporation

RS1AHM2G

Sehemu ya hisa.: 48

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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Taiwan Semiconductor Corporation

SS15 M2G

Sehemu ya hisa.: 128

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 750mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ES3G V6G

Sehemu ya hisa.: 51

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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Taiwan Semiconductor Corporation

SK56B M4G

Sehemu ya hisa.: 61

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 750mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

MUR310S V6G

Sehemu ya hisa.: 80

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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Taiwan Semiconductor Corporation

SK39A R3G

Sehemu ya hisa.: 77

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 90V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SS36 V6G

Sehemu ya hisa.: 112

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SS39 V7G

Sehemu ya hisa.: 63

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 90V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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