Diode - Warekebishaji - Moja | Bidhaa tofauti za semiconductor | 100

MUR360S V6G

Sehemu ya hisa.: 110

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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Taiwan Semiconductor Corporation

SK16B M4G

Sehemu ya hisa.: 72

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 750mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

MUR310S V7G

Sehemu ya hisa.: 104

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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Taiwan Semiconductor Corporation

SS35 V6G

Sehemu ya hisa.: 48

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SK110B M4G

Sehemu ya hisa.: 111

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ES3DV V6G

Sehemu ya hisa.: 130

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 20ns,

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Taiwan Semiconductor Corporation

HS3M V6G

Sehemu ya hisa.: 48

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Taiwan Semiconductor Corporation

HS3F V7G

Sehemu ya hisa.: 87

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 300V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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Taiwan Semiconductor Corporation

MUR305S V7G

Sehemu ya hisa.: 67

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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Taiwan Semiconductor Corporation

S5JB M4G

Sehemu ya hisa.: 141

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 5A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

S3GBHR5G

Sehemu ya hisa.: 88

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 3A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.5µs,

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Taiwan Semiconductor Corporation

S8GC V6G

Sehemu ya hisa.: 129

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

RS2A M4G

Sehemu ya hisa.: 90

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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Taiwan Semiconductor Corporation

S1DHR3G

Sehemu ya hisa.: 66

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.5µs,

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Taiwan Semiconductor Corporation

SK59BHR5G

Sehemu ya hisa.: 138

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 90V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

HS1M M2G

Sehemu ya hisa.: 117

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Taiwan Semiconductor Corporation

SK52BHM4G

Sehemu ya hisa.: 99

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SK320A M2G

Sehemu ya hisa.: 57

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

HS2M M4G

Sehemu ya hisa.: 76

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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Taiwan Semiconductor Corporation

RS1GHM2G

Sehemu ya hisa.: 62

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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Taiwan Semiconductor Corporation

SK34BHR5G

Sehemu ya hisa.: 110

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SK84C V6G

Sehemu ya hisa.: 131

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SK54B M4G

Sehemu ya hisa.: 65

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ES1FHM2G

Sehemu ya hisa.: 57

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 300V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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Taiwan Semiconductor Corporation

S4B V6G

Sehemu ya hisa.: 78

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 4A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.5µs,

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Taiwan Semiconductor Corporation

ES2CAHM2G

Sehemu ya hisa.: 52

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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Taiwan Semiconductor Corporation

RS2JA M2G

Sehemu ya hisa.: 66

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 250ns,

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Taiwan Semiconductor Corporation

RS2JAHM2G

Sehemu ya hisa.: 55

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 250ns,

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Taiwan Semiconductor Corporation

S1GB M4G

Sehemu ya hisa.: 136

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SSL24HR5G

Sehemu ya hisa.: 83

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 410mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SS115 M2G

Sehemu ya hisa.: 82

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

SS215HR5G

Sehemu ya hisa.: 55

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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Taiwan Semiconductor Corporation

ESH2CA R3G

Sehemu ya hisa.: 56

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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Taiwan Semiconductor Corporation

S2DHM4G

Sehemu ya hisa.: 131

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 2A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.5µs,

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Taiwan Semiconductor Corporation

US1G M2G

Sehemu ya hisa.: 92

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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Taiwan Semiconductor Corporation

HS2J M4G

Sehemu ya hisa.: 50

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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