Menu
KiswahiliKiswahili
RFQS / Order.
0RFQS / Order.

Transistors - FETs, MOSFETs - Moja

  • Nyumbani
  •  
  • Transistors - FETs, MOSFETs - Moja
TPCA8120,LQ(CM
Toshiba Semiconductor and Storage

TPCA8120,LQ(CM

Sehemu ya hisa.: 83086

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 45A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3 mOhm @ 22.5A, 10V,

Wishlist.
TJ60S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage

TJ60S04M3L(T6L1,NQ

Sehemu ya hisa.: 86603

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 30A, 10V,

Wishlist.
TK7P65W,RQ
Toshiba Semiconductor and Storage

TK7P65W,RQ

Sehemu ya hisa.: 118054

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.4A, 10V,

Wishlist.
TK5P53D(T6RSS-Q)
Toshiba Semiconductor and Storage

TK5P53D(T6RSS-Q)

Sehemu ya hisa.: 123262

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 525V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V,

Wishlist.
SSM3K15AFU,LF
Toshiba Semiconductor and Storage

SSM3K15AFU,LF

Sehemu ya hisa.: 175836

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4V, Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V,

Wishlist.
TPN11006NL,LQ
Toshiba Semiconductor and Storage

TPN11006NL,LQ

Sehemu ya hisa.: 101200

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 17A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8.5A, 10V,

Wishlist.
TPH8R903NL,LQ
Toshiba Semiconductor and Storage

TPH8R903NL,LQ

Sehemu ya hisa.: 115691

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 10A, 10V,

Wishlist.
SSM3K336R,LF
Toshiba Semiconductor and Storage

SSM3K336R,LF

Sehemu ya hisa.: 142287

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 95 mOhm @ 2A, 10V,

Wishlist.
SSM3K116TU,LF
Toshiba Semiconductor and Storage

SSM3K116TU,LF

Sehemu ya hisa.: 124084

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V,

Wishlist.
TPCP8J01(TE85L,F,M
Toshiba Semiconductor and Storage

TPCP8J01(TE85L,F,M

Sehemu ya hisa.: 7462

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 32V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 35 mOhm @ 3A, 10V,

Wishlist.
SSM6K403TU,LF
Toshiba Semiconductor and Storage

SSM6K403TU,LF

Sehemu ya hisa.: 160075

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4V, Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4V,

Wishlist.
TPN6R303NC,LQ
Toshiba Semiconductor and Storage

TPN6R303NC,LQ

Sehemu ya hisa.: 135173

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 10A, 10V,

Wishlist.
SSM3K16CT(TPL3)
Toshiba Semiconductor and Storage

SSM3K16CT(TPL3)

Sehemu ya hisa.: 100992

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V,

Wishlist.
TK2P60D(TE16L1,NQ)
Toshiba Semiconductor and Storage

TK2P60D(TE16L1,NQ)

Sehemu ya hisa.: 165770

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1A, 10V,

Wishlist.
SSM3K36FS,LF
Toshiba Semiconductor and Storage

SSM3K36FS,LF

Sehemu ya hisa.: 126626

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 500mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 5V, Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V,

Wishlist.
SSM3J332R,LF
Toshiba Semiconductor and Storage

SSM3J332R,LF

Sehemu ya hisa.: 169586

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 10V, Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V,

Wishlist.
TPH14006NH,L1Q
Toshiba Semiconductor and Storage

TPH14006NH,L1Q

Sehemu ya hisa.: 166914

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6.5V, 10V, Rds On (Max) @ Id, Vgs: 14 mOhm @ 7A, 10V,

Wishlist.
SSM6K513NU,LF
Toshiba Semiconductor and Storage

SSM6K513NU,LF

Sehemu ya hisa.: 134203

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 4A, 10V,

Wishlist.
SSM3J328R,LF
Toshiba Semiconductor and Storage

SSM3J328R,LF

Sehemu ya hisa.: 158450

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 29.8 mOhm @ 3A, 4.5V,

Wishlist.
SSM6J507NU,LF
Toshiba Semiconductor and Storage

SSM6J507NU,LF

Sehemu ya hisa.: 126250

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 20 mOhm @ 4A, 10V,

Wishlist.
TPH6R004PL,LQ
Toshiba Semiconductor and Storage

TPH6R004PL,LQ

Sehemu ya hisa.: 7474

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 87A (Ta), 49A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 mOhm @ 24.5A, 10V,

Wishlist.
SSM3K7002KFU,LF
Toshiba Semiconductor and Storage

SSM3K7002KFU,LF

Sehemu ya hisa.: 186902

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 400mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V,

Wishlist.
SSM3K376R,LF
Toshiba Semiconductor and Storage

SSM3K376R,LF

Sehemu ya hisa.: 7265

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 56 mOhm @ 2A, 4.5V,

Wishlist.
SSM3J331R,LF
Toshiba Semiconductor and Storage

SSM3J331R,LF

Sehemu ya hisa.: 7291

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 55 mOhm @ 3A, 4.5V,

Wishlist.
SSM3K56ACT,L3F
Toshiba Semiconductor and Storage

SSM3K56ACT,L3F

Sehemu ya hisa.: 123517

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V,

Wishlist.
SSM3K335R,LF
Toshiba Semiconductor and Storage

SSM3K335R,LF

Sehemu ya hisa.: 165419

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 38 mOhm @ 4A, 10V,

Wishlist.
TPH6R003NL,LQ
Toshiba Semiconductor and Storage

TPH6R003NL,LQ

Sehemu ya hisa.: 185914

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 38A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 mOhm @ 19A, 10V,

Wishlist.
SSM6J414TU,LF
Toshiba Semiconductor and Storage

SSM6J414TU,LF

Sehemu ya hisa.: 168558

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 6A, 4.5V,

Wishlist.
SSM3K361R,LF
Toshiba Semiconductor and Storage

SSM3K361R,LF

Sehemu ya hisa.: 190687

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 69 mOhm @ 2A, 10V,

Wishlist.
SSM3K35AMFV,L3F
Toshiba Semiconductor and Storage

SSM3K35AMFV,L3F

Sehemu ya hisa.: 131212

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 250mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.2V, 4.5V, Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V,

Wishlist.
SSM3K329R,LF
Toshiba Semiconductor and Storage

SSM3K329R,LF

Sehemu ya hisa.: 180365

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4V, Rds On (Max) @ Id, Vgs: 126 mOhm @ 1A, 4V,

Wishlist.
SSM6K361NU,LF
Toshiba Semiconductor and Storage

SSM6K361NU,LF

Sehemu ya hisa.: 7288

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 69 mOhm @ 2A, 10V,

Wishlist.
SSM6K217FE,LF
Toshiba Semiconductor and Storage

SSM6K217FE,LF

Sehemu ya hisa.: 166457

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.8A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 8V, Rds On (Max) @ Id, Vgs: 195 mOhm @ 1A, 8V,

Wishlist.
SSM3K36MFV,L3F
Toshiba Semiconductor and Storage

SSM3K36MFV,L3F

Sehemu ya hisa.: 111367

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 500mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 5V, Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V,

Wishlist.
TPC6113(TE85L,F,M)
Toshiba Semiconductor and Storage

TPC6113(TE85L,F,M)

Sehemu ya hisa.: 100371

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 4.5V,

Wishlist.
SSM3K341R,LF
Toshiba Semiconductor and Storage

SSM3K341R,LF

Sehemu ya hisa.: 103520

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 36 mOhm @ 5A, 10V,

Wishlist.