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Transistors - Bipolar (BJT) - Moja, Kabla ya Upend

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  • Transistors - Bipolar (BJT) - Moja, Kabla ya Upend
RN2104(T5L,F,T)
Toshiba Semiconductor and Storage

RN2104(T5L,F,T)

Sehemu ya hisa.: 2145

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN2402,LF
Toshiba Semiconductor and Storage

RN2402,LF

Sehemu ya hisa.: 90

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN2413TE85LF
Toshiba Semiconductor and Storage

RN2413TE85LF

Sehemu ya hisa.: 186078

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN2119MFV(TPL3)
Toshiba Semiconductor and Storage

RN2119MFV(TPL3)

Sehemu ya hisa.: 2192

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 1 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN2305(TE85L,F)
Toshiba Semiconductor and Storage

RN2305(TE85L,F)

Sehemu ya hisa.: 178191

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1104MFV,L3F
Toshiba Semiconductor and Storage

RN1104MFV,L3F

Sehemu ya hisa.: 171892

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1304,LF
Toshiba Semiconductor and Storage

RN1304,LF

Sehemu ya hisa.: 189

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1405,LF
Toshiba Semiconductor and Storage

RN1405,LF

Sehemu ya hisa.: 146891

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1404,LF
Toshiba Semiconductor and Storage

RN1404,LF

Sehemu ya hisa.: 81

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1105,LF(CT
Toshiba Semiconductor and Storage

RN1105,LF(CT

Sehemu ya hisa.: 162509

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1117MFV,L3F
Toshiba Semiconductor and Storage

RN1117MFV,L3F

Sehemu ya hisa.: 165156

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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RN2111MFV,L3F
Toshiba Semiconductor and Storage

RN2111MFV,L3F

Sehemu ya hisa.: 146

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN1310(TE85L,F)
Toshiba Semiconductor and Storage

RN1310(TE85L,F)

Sehemu ya hisa.: 2124

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN2309(TE85L,F)
Toshiba Semiconductor and Storage

RN2309(TE85L,F)

Sehemu ya hisa.: 2193

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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RN2114(TE85L,F)
Toshiba Semiconductor and Storage

RN2114(TE85L,F)

Sehemu ya hisa.: 128

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 1 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN2130MFV,L3F
Toshiba Semiconductor and Storage

RN2130MFV,L3F

Sehemu ya hisa.: 188

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 100 kOhms, Resistor - Msingi wa Emitter (R2): 100 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

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RN1110MFV,L3F
Toshiba Semiconductor and Storage

RN1110MFV,L3F

Sehemu ya hisa.: 102439

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN2311(TE85L,F)
Toshiba Semiconductor and Storage

RN2311(TE85L,F)

Sehemu ya hisa.: 3308

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN2306,LF
Toshiba Semiconductor and Storage

RN2306,LF

Sehemu ya hisa.: 166487

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1110(T5L,F,T)
Toshiba Semiconductor and Storage

RN1110(T5L,F,T)

Sehemu ya hisa.: 3223

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN2312(TE85L,F)
Toshiba Semiconductor and Storage

RN2312(TE85L,F)

Sehemu ya hisa.: 147502

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN1412TE85LF
Toshiba Semiconductor and Storage

RN1412TE85LF

Sehemu ya hisa.: 2025

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN2105MFV,L3F
Toshiba Semiconductor and Storage

RN2105MFV,L3F

Sehemu ya hisa.: 1951

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1404S,LF
Toshiba Semiconductor and Storage

RN1404S,LF

Sehemu ya hisa.: 135884

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN2402S,LF
Toshiba Semiconductor and Storage

RN2402S,LF

Sehemu ya hisa.: 1906

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN1110CT(TPL3)
Toshiba Semiconductor and Storage

RN1110CT(TPL3)

Sehemu ya hisa.: 3274

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 50mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 20V, Kizuizi - Msingi (R1): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

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RN1102ACT(TPL3)
Toshiba Semiconductor and Storage

RN1102ACT(TPL3)

Sehemu ya hisa.: 3264

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 80mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Wishlist.
RN2101,LF(CT
Toshiba Semiconductor and Storage

RN2101,LF(CT

Sehemu ya hisa.: 123572

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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RN2307(TE85L,F)
Toshiba Semiconductor and Storage

RN2307(TE85L,F)

Sehemu ya hisa.: 1971

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1107,LF(CT
Toshiba Semiconductor and Storage

RN1107,LF(CT

Sehemu ya hisa.: 197244

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN2112CT(TPL3)
Toshiba Semiconductor and Storage

RN2112CT(TPL3)

Sehemu ya hisa.: 3192

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 50mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 20V, Kizuizi - Msingi (R1): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

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RN1102CT(TPL3)
Toshiba Semiconductor and Storage

RN1102CT(TPL3)

Sehemu ya hisa.: 1945

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 50mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 20V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V,

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RN1109(T5L,F,T)
Toshiba Semiconductor and Storage

RN1109(T5L,F,T)

Sehemu ya hisa.: 3219

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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RN1303(TE85L,F)
Toshiba Semiconductor and Storage

RN1303(TE85L,F)

Sehemu ya hisa.: 1973

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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RN1106CT(TPL3)
Toshiba Semiconductor and Storage

RN1106CT(TPL3)

Sehemu ya hisa.: 1960

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 50mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 20V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

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RN1118(T5L,F,T)
Toshiba Semiconductor and Storage

RN1118(T5L,F,T)

Sehemu ya hisa.: 1923

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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