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Transistors - Bipolar (BJT) - Moja, Kabla ya Upend

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  • Transistors - Bipolar (BJT) - Moja, Kabla ya Upend
RN2404TE85LF
Toshiba Semiconductor and Storage

RN2404TE85LF

Sehemu ya hisa.: 1976

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1402S,LF
Toshiba Semiconductor and Storage

RN1402S,LF

Sehemu ya hisa.: 1953

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN2104MFV,L3F
Toshiba Semiconductor and Storage

RN2104MFV,L3F

Sehemu ya hisa.: 1980

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN2402S,LF(D
Toshiba Semiconductor and Storage

RN2402S,LF(D

Sehemu ya hisa.: 1961

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN2106(T5L,F,T)
Toshiba Semiconductor and Storage

RN2106(T5L,F,T)

Sehemu ya hisa.: 1986

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1104CT(TPL3)
Toshiba Semiconductor and Storage

RN1104CT(TPL3)

Sehemu ya hisa.: 1925

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 50mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 20V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

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RN2111CT(TPL3)
Toshiba Semiconductor and Storage

RN2111CT(TPL3)

Sehemu ya hisa.: 2043

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 50mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 20V, Kizuizi - Msingi (R1): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

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RN1105ACT(TPL3)
Toshiba Semiconductor and Storage

RN1105ACT(TPL3)

Sehemu ya hisa.: 1932

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 80mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 2.2 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1406S,LF(D
Toshiba Semiconductor and Storage

RN1406S,LF(D

Sehemu ya hisa.: 1944

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1108(T5L,F,T)
Toshiba Semiconductor and Storage

RN1108(T5L,F,T)

Sehemu ya hisa.: 2027

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN2108ACT(TPL3)
Toshiba Semiconductor and Storage

RN2108ACT(TPL3)

Sehemu ya hisa.: 1975

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 80mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1316,LF
Toshiba Semiconductor and Storage

RN1316,LF

Sehemu ya hisa.: 199880

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN2113CT(TPL3)
Toshiba Semiconductor and Storage

RN2113CT(TPL3)

Sehemu ya hisa.: 1959

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 50mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 20V, Kizuizi - Msingi (R1): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

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RN1108ACT(TPL3)
Toshiba Semiconductor and Storage

RN1108ACT(TPL3)

Sehemu ya hisa.: 1901

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 80mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN2112,LF(CT
Toshiba Semiconductor and Storage

RN2112,LF(CT

Sehemu ya hisa.: 9941

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN2103MFV,L3F
Toshiba Semiconductor and Storage

RN2103MFV,L3F

Sehemu ya hisa.: 1966

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Wishlist.
RN1103CT(TPL3)
Toshiba Semiconductor and Storage

RN1103CT(TPL3)

Sehemu ya hisa.: 1955

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 50mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 20V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Wishlist.
RN1413(TE85L,F)
Toshiba Semiconductor and Storage

RN1413(TE85L,F)

Sehemu ya hisa.: 169265

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN1111ACT(TPL3)
Toshiba Semiconductor and Storage

RN1111ACT(TPL3)

Sehemu ya hisa.: 1945

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 80mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Wishlist.
RN2118(T5L,F,T)
Toshiba Semiconductor and Storage

RN2118(T5L,F,T)

Sehemu ya hisa.: 1956

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Wishlist.
RN1108CT(TPL3)
Toshiba Semiconductor and Storage

RN1108CT(TPL3)

Sehemu ya hisa.: 1979

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 50mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 20V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

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RN1106ACT(TPL3)
Toshiba Semiconductor and Storage

RN1106ACT(TPL3)

Sehemu ya hisa.: 2028

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 80mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.
RN2102ACT(TPL3)
Toshiba Semiconductor and Storage

RN2102ACT(TPL3)

Sehemu ya hisa.: 1977

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 80mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Wishlist.
RN2104CT(TPL3)
Toshiba Semiconductor and Storage

RN2104CT(TPL3)

Sehemu ya hisa.: 1987

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 50mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 20V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Wishlist.
RN1109CT(TPL3)
Toshiba Semiconductor and Storage

RN1109CT(TPL3)

Sehemu ya hisa.: 1950

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 50mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 20V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Wishlist.
RN2104ACT(TPL3)
Toshiba Semiconductor and Storage

RN2104ACT(TPL3)

Sehemu ya hisa.: 2045

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 80mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.
RN2103CT(TPL3)
Toshiba Semiconductor and Storage

RN2103CT(TPL3)

Sehemu ya hisa.: 3230

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 50mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 20V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Wishlist.
RN1104ACT(TPL3)
Toshiba Semiconductor and Storage

RN1104ACT(TPL3)

Sehemu ya hisa.: 1956

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 80mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.
RN2303(TE85L,F)
Toshiba Semiconductor and Storage

RN2303(TE85L,F)

Sehemu ya hisa.: 126325

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 22 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Wishlist.
RN2107ACT(TPL3)
Toshiba Semiconductor and Storage

RN2107ACT(TPL3)

Sehemu ya hisa.: 2063

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 80mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.
RN1441ATE85LF
Toshiba Semiconductor and Storage

RN1441ATE85LF

Sehemu ya hisa.: 176769

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 300mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 20V, Kizuizi - Msingi (R1): 5.6 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V,

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RN2108CT(TPL3)
Toshiba Semiconductor and Storage

RN2108CT(TPL3)

Sehemu ya hisa.: 2026

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 50mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 20V, Kizuizi - Msingi (R1): 22 kOhms, Resistor - Msingi wa Emitter (R2): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Wishlist.
RN1101ACT(TPL3)
Toshiba Semiconductor and Storage

RN1101ACT(TPL3)

Sehemu ya hisa.: 1962

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 80mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 4.7 kOhms, Resistor - Msingi wa Emitter (R2): 4.7 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Wishlist.
RN1102MFV,L3F
Toshiba Semiconductor and Storage

RN1102MFV,L3F

Sehemu ya hisa.: 120698

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 10 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Wishlist.
RN1414,LF
Toshiba Semiconductor and Storage

RN1414,LF

Sehemu ya hisa.: 112225

Aina ya Transistor: NPN - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 1 kOhms, Resistor - Msingi wa Emitter (R2): 10 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN2313(TE85L,F)
Toshiba Semiconductor and Storage

RN2313(TE85L,F)

Sehemu ya hisa.: 163677

Aina ya Transistor: PNP - Pre-Biased, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kizuizi - Msingi (R1): 47 kOhms, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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